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IRFZ40, SiHFZ40,IRFZ40,IRFW634B,
IRFZ40, SiHFZ40
Vendor:Other Category:Other
Power MOSFET IRFZ40, SiHFZ40IRFZ40
Mfg:ST Pack:TO-220 D/C:08+ Vendor:Other Category:Other
IRFZ34VSPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 30A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRFZ34VS
Mfg:IR Pack:to-263 D/C:500 Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ34VPbF
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 30A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...IRFZ34VLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 30A TO-262Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VLPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRFZ34VL
Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ34V
Mfg:IR Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed ...IRFZ34S
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ34S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ34NS
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ34NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRFZ34NPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 29A TO-220ABFifth Generation HEXFETs from International Rectifier IRFZ34NPbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed ...IRFZ34NL
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ34NL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRFZ34N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 29A TO-220ABFifth Generation HEXFETs from International Rectifier IRFZ34N utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and...IRFZ34L
Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ34L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ34E
Mfg:IR Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ34E utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and...IRFZ34, SiHFZ34
Vendor:Other Category:Other
Power MOSFET IRFZ34, SiHFZ34IRFZ24VSPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 17A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRFZ24VS
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ24VPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 17A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...IRFZ24VLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 17A TO-262Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VLPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching ...IRFZ24VL
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ24V
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ24V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...IRFZ24S
Mfg:IR Pack:TO-263 D/C:05+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ24S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ24NS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 17A D2PAKFifth Generation HEXFETs from International Rectifier IRFZ24NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRFZ24NPbF
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 17A TO-220ABFifth Generation HEXFET® power MOSFETs from International Rectifier IRFZ24NPbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fa...IRFZ24N
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 17A TO-220ABFifth Generation HEXFET® power MOSFETs from International Rectifier IRFZ24N utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast s...IRFZ24LPbF
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ24LPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ru...IRFZ24L
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ24L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ24A
Mfg:SAMSUNG Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
IRFZ24
Vendor:Other Category:Other
The IRFZ24 has five features.The first one is dynamic dv/dt rating.The second one is 175 operating temperature.The third one is fast switching.The fourth one is ease of paralleling.The fifth one is simple drive requireme...IRFZ14S
Mfg:26521 Pack: I R Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ14S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRFZ14L
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ14L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ14, SiHFZ14
Vendor:Other Category:Other
Power MOSFET IRFZ14, SiHFZ14IRFZ14
Vendor:Other Category:Other
The IRFZ14 is a device belongs to third generation HEXFETs from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti...IRFZ10, SiHFZ10
Vendor:Other Category:Other
Power MOSFET IRFZ10, SiHFZ10IRFZ10
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Third Generation Power MOSFETs IRFZ10 from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The IRFZ10 TO-220 package is univer...IRFY9240M
Vendor:Other Category:Other
IRFY9240CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY9240C
Vendor:Other Category:Other
IRFY9240
Vendor:Other Category:Other
IRFY9230
Vendor:Other Category:Other
IRFY9140M
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY9140CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY9140C
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY9140
Mfg:SML Pack:TO-220 Vendor:Other Category:Other
IRFY9130M
Vendor:Other Category:Other
IRFY9130CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY9130C
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
IRFY9130
Mfg:IR Pack:07+ Vendor:Other Category:Other
IRFY9120
Vendor:Other Category:Other
IRFY440M
Vendor:Other Category:Other
IRFY440CM
Mfg:IOR Pack:TO-220 D/C:6+ Vendor:Other Category:Other
IRFY440C
Vendor:Other Category:Other
IRFY440
Vendor:Other Category:Other
IRFY430M-T257
Vendor:Other Category:Other
IRFY430M
Vendor:Other Category:Other
IRFY430CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY430C
Vendor:Other Category:Other
IRFY430
Vendor:Other Category:Other
IRFY420
Vendor:Other Category:Other
All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. IRFY420IRFY340M
Vendor:Other Category:Other
IRFY340CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY340C
Vendor:Other Category:Other
IRFY340
Mfg:IR Pack:07+ Vendor:Other Category:Other
IRFY330
Vendor:Other Category:Other
IRFY240M
Vendor:Other Category:Other
IRFY240CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY240
Mfg:IR Pack:TO-220 D/C:06+ Vendor:Other Category:Other
IRFY230
Vendor:Other Category:Other
IRFY220
Mfg:IR Pack:07+ Vendor:Other Category:Other
IRFY140M
Vendor:Other Category:Other
IRFY140CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY140C
Vendor:Other Category:Other
IRFY140
Vendor:Other Category:Other
IRFY1310M-T257
Vendor:Other Category:Other
IRFY130M
Vendor:Other Category:Other
IRFY130CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY130C
Vendor:Other Category:Other
IRFY130
Vendor:Other Category:Other
IRFY120
Vendor:Other Category:Other
IRFY11N50CMA
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY044M
Vendor:Other Category:Other
IRFY044CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY044C
Vendor:Other Category:Other
IRFY044
Vendor:Other Category:Other
IRFWI530A
Mfg:FAIRCHILD Pack:TO Vendor:Other Category:Other
IRFW840B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW840B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW840
Vendor:Other Category:Other
Features of the IRFW840 are:(1)8.0A,500V,RDS(on)=0.8@VCS=10V;(2)low gate charge (typical 41 nC);(3)low crss(typical 35 pF);(4)fast switching;(5)100% avalanche tested;(6)improved dv/dt capability. The absolute maximum ra...IRFW830B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW830B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW820B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW820B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW740B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW740B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW740A
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
IRFW730B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW730B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resi...IRFW720B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW720B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW710B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW710B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW654B
Mfg:FAIRCHILD Pack:TO Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW654B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW650B
Mfg:FSC Pack:TO-263 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW650B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW644B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW644B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW640B
Mfg:FSC Pack:TO-263 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW640B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW634B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW634B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...