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SD1439,SD1437,SD1060CT,
SD1439
Vendor:Other Category:Other
The SD1439 is a silicon NPN bipolar device specifically designed for high linearity applications in the UHF frequency range including TV Bands IV and V.Gold metallization and emitter ballasting assure high reliability un...SD1437
Vendor:Other Category:Other
The SD1437 is a silicon NPN bipolar device specifically designed for high linearity applications in the UHF frequency range including TV Bands IV and V.Gold metallization and emitter ballasting assure high reliability un...SD1434
Mfg:ST Vendor:Other Category:Other
The SD1434 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating conditions.SD1433
Mfg:ST Pack:MODULE D/C:50 Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR NPN RF UHF 4LEADThe SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications in the 450 - 512 MHz frequency range. This device uses an emitter ballasted geometry specifically designed for optimum stab...SD1429-3
Vendor:Other Category:Other
The SD1429-3 is RF and microwave transistors 450-512MHz classic. mobile applocations. The type SD1429-3 is a 12.5V epitaxial silioon NPN plannar transisor designed primarily for UHF communications. It withstands infinite...SD1429
Mfg:ST Pack:00+ D/C:N/A Vendor:Other Category:Other
The SD1429 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes "Tuned Q" technology which consists of an input matching network on the base to achie...SD1425
Vendor:Other Category:Other
The ASI SD1425 is Designed for Class AB Linear Base Station Applications in the 800-900 MHz Frequency Range.SD1424
Mfg:ST Vendor:Other Category:Other
The SD1424 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application.SD1423
Mfg:ST Pack:M118 Vendor:Other Category:Other
The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as ...SD1422
Vendor:Other Category:Other
The SD1422 is designed as one kind of RF and microwave transistor device that uses matched input technology (tuned Q) to increase bandwidth and power gain over the 806 to 900 MHz range. It withstands 20:1 VSWR at rated c...SD1420-14
Vendor:Other Category:Other
The SD1420-14 is designed as one kind of RF and microwave transistor device that uses matched input technology (tuned Q) to increase bandwidth and power gain over the 806 to 900 MHz range. It withstands 20:1 VSWR at rate...SD1420
Vendor:Other Category:Other
The SD1420 is a gold metallized epitaxial silicon NPN planar transistor designed for high linearity Class A operation Cellular Base Station applications. The SD1420 is also available in a studlesspackage as the SD1420-01...SD1414-12
Mfg:ST Pack:M142 Vendor:Other Category:Other
The SD1414-12 is a 13.5 V Class C Epitaxial silicon NPN planar transistor designed for amplifier applications up to 960 MHz. Internal input matching and common base configuration assure optimum gain and efficiency in bro...SD1414
Mfg:ST Pack:M142 Vendor:Other Category:Other
The SD1414 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806 - 866 MHz frequency range. Internal input matching and common base configuration assure optimum gain a...SD1411
Mfg:ST Vendor:Other Category:Other
The SD1411 is a silicon NPN transistor designed for telecommunications in HF and VHF frequency bands. This device utilizes gold metallized die with diffused emitter resistors to achieve high reliability and ruggedness.SD140P
Vendor:Other Category:Other
SD1409
Vendor:Other Category:Other
The SD1409 is a gold metallized epitaxial silicon NPN planar transistor designed for high linearity Class A operation Cellular Base Station applications. The device is also available in a studlesspackage as the SD1409-01...SD1407
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability.SD1405
Mfg:ST Pack:M174 Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS NPN RF MCRWAVE HF SSB M174The SD1405 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes diffused emitter resistors to achieve infinte VSWR under rated operating conditions.SD1400A
Vendor:Other Category:Other
SD1400
Vendor:Other Category:Other
The SD1400 is designed as one kind of RF and microwave transistor device that uses matched input technology (tuned Q) to increase bandwidth and power gain over the 806 to 900 MHz range. It withstands 20:1 VSWR at rated c...SD1398
Mfg:ST Pack:M142 Vendor:Other Category:Other
The SD1398 is a gold metallized epitaxial silicon NPN transistor designed for high linearity Class AB operation cellular base station applications. The SD1398 can also be operated Class C.The SD1398 is internally input m...SD1391
Mfg:ST Pack:M142 Vendor:Other Category:Other
The SD1391 is a gold metallized NPN planar transistor using diffused emitter ballast resistors for reliability and ruggedness. The SD1391 is specifically designed as a low power, high gain driver and can be operated in C...SD1390
Mfg:ST Pack:M123 Vendor:Other Category:Other
The SD1390 is a gold metallized NPN planar transistor using diffused emitter ballast resistors for reliability and ruggedness. The SD1390 is specifically designed as a low power, high gain driver and can be operated in C...SD1332
Vendor:Other Category:Other
The SD1332 is an all gold metallized NPN silicon transistor featuring high gain and very low noise.Features of the SD1332 are:(1)high FT-5.5GHz;(2)very low noise;(3)all gold metallized;(4)hermetic pacvkage. The absolute...SD130P
Vendor:Other Category:Other
SD12-R47
Vendor:Other Category:Other
The SD12-R47 features: • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density• Inductance range from .47uH to 1000uH• Current range from 6.00 to 0.088 Am...SD12H0K
Vendor:Other Category:Other
SD12H0B
Vendor:C&K Components Category:Switches
SWITCH DIP FLUSH TAPE SEAL 12POSSD1285
Mfg:ST Pack:M113 Vendor:Other Category:Other
The SD1285 is a 12.5 V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.SD1275-01
Mfg:ST Pack:(LX)high-frequency Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS NPN RF MICROWAVE VHF M113The SD1275-01 is a13.6 VClass C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1275-01 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.SD1275
Mfg:ST Pack:(LX)high-frequency Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS NPN RF MICROWAVE VHF M135The SD1275 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1275 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.SD1274-01
Mfg:ASI Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS NPN RF MICROWAVE VHF M113The SD1274-01 is a13.6 VClass C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1274-01 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.SD1274
Mfg:ST Pack:M135 Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS NPN RF MICROWAVE VHF M135The SD1274 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1274 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.SD1272-02
Vendor:Other Category:Other
The SD1272-02 is designed as one kind of RF & microwave transistor device that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitte...SD1272
Vendor:Other Category:Other
The SD1272 is a 12.5V epitaxial silicon NPN planar transistor.Features of the SD1272 are:(1)FM class C transistor;(2)frequency is 175MHz;(3)voltage is 12.5V;(4)power out is 25W;(5)power gain is 9.2dB;(6)common emitter. ...SD12-2R2
Vendor:Other Category:Other
The SD12-2R2 features: • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density• Inductance range from .47uH to 1000uH• Current range from 6.00 to 0.088 Am...SD1224-2
Vendor:Other Category:Other
The SD1224-2 is an epitaxial silicon NPN planar transistor.Features of the SD1224-2 are:(1)FM class C transistor;(2)frequency is 175MHz;(3)voltage is 28V;(4)power out is 40W;(5)power gain is 7.6dB;(6)efficiency is 60%;(7...SD1224-10
Mfg:ST Pack:M113 Vendor:Other Category:Other
The SD1224-10 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB com- munications. This device utilizes emitter ballasting for improved ruggedness and reliability.SD1224
Vendor:Other Category:Other
The SD1224 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground station transmitters. This device utilizes ballasted emitter resistors and improved metalli...SD1222-5
Mfg:ST Pack:4L FLG Vendor:Other Category:Other
The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations.SD12-1R5
Vendor:Other Category:Other
The SD12-1R5 features: • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density• Inductance range from .47uH to 1000uH• Current range from 6.00 to 0.088 Am...SD12-1R2
Vendor:Other Category:Other
The SD12-1R2 features: • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density• Inductance range from .47uH to 1000uH• Current range from 6.00 to 0.088 Am...SD1219
Mfg:ST Pack:4L STUD Vendor:Other Category:Other
The SD1219 is Designed for 12.5 V Collector Modulated AM Class C Amplifier Service in the 118 to 136 MHz Avionics Communication Band.SD1210
Mfg:SMART MODULAR TECHNOLOGIES, IN Vendor:Other Category:Other
The SD1210 features: 1. Input mode detection and auto calibration block2. Buffer memory and read/write control block3. Image scaling, interpolation and dithering block4. OSD mixer and LCD interface block5. EEPROM i...SD120P
Vendor:Other Category:Other
SD1200
Vendor:Other Category:Other
The SD1200 features: 1. Input mode detection & auto calibration block2. Buffer memory and read/write control block3. Image scaling, interpolation and dithering block4. OSD mixer and LCD interface block5. EEPROM...SD118-23-21-021
Vendor:Advanced Photonix Inc Category:Sensors, Transducers
PHOTODIODE QUAD TO-5SD1146
Mfg:ST Pack:M122 Vendor:Other Category:Other
The SD1146 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions.SD1144
Vendor:Other Category:Other
The SD1144 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions.SD1143
Vendor:Other Category:Other
The SD1143 is a 12.2 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF Communications. It withstands very high VSWR under operating conditions.SD1137
Vendor:Other Category:Other
The SD1137 is designed as one kind of N-channel enhancement-mode D-MOS power FETs device that can be used in (1)complementary voltage and current drivers;(2)line drivers;(3)pulse amplifiers;(4)solid-state relays. Featur...SD1136
Vendor:Other Category:Other
The SD1136 is designed as one kind of NPN silicon high frequency transistor device that can be used in general purpose amplifier applications. The absolute maximum ratings of the SD1006-221KA can be summarized as:(1)VCEO...SD1135-03
Mfg:ST Vendor:Other Category:Other
The SD1135-03 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions.SD1135
Mfg:ST Pack:M122 Vendor:Other Category:Other
The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions.SD1134-05
Vendor:Other Category:Other
The SD1134-05 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications.It with stands very high VSWR under rated operating conditions.SD1134
Mfg:ST Pack:M122 Vendor:Other Category:Other
The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallizationto achieve infinite VSWR at rated operating conditions.SD1132-5
Vendor:Other Category:Other
The SD1132-5 is a 12.5V epitaxial silicon NPN planar transistor designed primarly for UHF predriver applications.Features of the SD1132-5 are:(1)FM class C transistor;(2)frequency is 470MHz;(3)voltage is 12.5V;(4)power o...SD113-24-21-021
Vendor:Advanced Photonix Inc Category:Sensors, Transducers
PHOTODIODE BI-CELL G50SD-112S
Mfg:KODENSHI Pack:. D/C:07+ Vendor:Other Category:Other
SD-112F2
Vendor:Other Category:Other
The SD-112F2 is designed as one kind of position sensor that can be used in automatic focusing of camera application. Features of the SD-612 are:(1)visible ray cut off flat package; (2)laser beam focusing / positioning i...SD1127
Mfg:MSC Vendor:Other Category:Other
THE SD1127 IS A 12.5 VOLT SILICON NPN PLANAR TRANSISTOR DESIGNED FOR ECONOMICAL VHF COMMUNICATIONS. THE TRANSISTOR CHIP IS MOUNTED ON A BERYLLIUM OXIDE TAB TO ISOLATE THE COLLECTOR LEAD ALLOWING A GROUNDED EMITTER CONFIG...SD112-45-11-221
Vendor:Advanced Photonix Inc Category:Sensors, Transducers
DETECTOR/AMP BLUE 600MOHM TO-5SD112-43-11-221
Vendor:Advanced Photonix Inc Category:Sensors, Transducers
DETECTOR/AMP RED 75MOHM TO-5SD112-42-11-221
Vendor:Advanced Photonix Inc Category:Sensors, Transducers
DETECTOR/AMP RED 100KOHM TO-5SD112
Vendor:Other Category:Other
The SD112 is designed as one kind of position sensor that can be used in automatic focusing of camera application. Features of the SD-612 are:(1)visible ray cut off flat package; (2)laser beam focusing / positioning is b...SD1106
Vendor:Other Category:Other
The SD1106 is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)high-speed pulse amplifiers; (2)logic buffers; (3)line drivers; (4)solid-state relays. Feature...SD1100P
Vendor:Other Category:Other
SD1100L
Vendor:Other Category:Other
SD1100C04C
Vendor:Other Category:Other
The SD1100C04C is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)Converters; (2)Power supplies; (3)Machine tool controls; (4)High power drives; (5)Medium tr...SD1100C..C
Mfg:Vishay Pack:E-PUK (B-43) D/C:08+ Vendor:Other Category:Other
SD1100C..C, Standard Recovery Diodes (Hockey PUK Version), 1400 ASD1100C
Vendor:Other Category:Other
SD1100
Vendor:Other Category:Other
The SD1100 is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)motor controls;(2)line drivers;(3)power supplies. Features of the SD1100 are:(1)gate stand-off...SD10-R47
Vendor:Other Category:Other
The SD10-R47 features: • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density• Inductance range from .47uH to 1000uH• Current range from 6.00 to 0.088 Am...SD10H0B
Vendor:C&K Components Category:Switches
SWITCH DIP FLUSH TAPE SEAL 10POSSD1090P
Vendor:Other Category:Other
SD10-8R2
Vendor:Other Category:Other
The SD10-8R2 features: • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density• Inductance range from .47uH to 1000uH• Current range from 6.00 to 0.088 Am...SD10-820
Vendor:Other Category:Other
The SD10-820 features: • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density• Inductance range from .47uH to 1000uH• Current range from 6.00 to 0.088 ...SD1080YT
Vendor:Other Category:Other
SD1080YS
Vendor:Other Category:Other
SD1080T
Vendor:Other Category:Other
SD1080S
Vendor:Other Category:Other
SD1080D
Vendor:Other Category:Other
SD1080CT
Vendor:Other Category:Other
SD1080CS
Vendor:Other Category:Other
SD1080
Vendor:Other Category:Other
SD107WS-7
Vendor:Other Category:Other
The SD107WS-7 is designed as one kind of surface mount schottky barrier diode device that has some points of features:(1)low forward voltage drop; (2)guard ring die construction for transient protection; (3)ideal for low...SD107WS
Pack:SOT-23 D/C:08 Vendor:Other Category:Other
SD106WS
Vendor:Other Category:Other
SD10-6R2
Vendor:Other Category:Other
The SD10-6R2 features: • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density• Inductance range from .47uH to 1000uH• Current range from 6.00 to 0.088 Am...SD10-680
Vendor:Other Category:Other
The SD10-680 features: • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density• Inductance range from .47uH to 1000uH• Current range from 6.00 to 0.088 ...SD1065
Vendor:Other Category:Other
The SD1065 is designed as one kind of N-channel enhancement-mode high voltage D-MOS power FETs device that can be used in (1)high-speed pulse amplifiers; (2)logic buffers; (3)line drivers; (4)solid-state relays. Feature...SD1062
Vendor:Other Category:Other
The SD1062 is designed as one kind of RF & microwave transistor device that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters ...SD1060YT
Vendor:Other Category:Other
SD1060YS
Vendor:Other Category:Other
SD1060T
Vendor:Other Category:Other
SD1060S
Vendor:Other Category:Other
SD1060P
Vendor:Other Category:Other
SD1060D
Vendor:Other Category:Other
SD1060CT
Vendor:Other Category:Other