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Mfg:ST Vendor:Other Category:Other
The SD1894 is a common base silicon NPN bipolar device optimized for 1.6 GHz SATCOM applications.The SD1894 offers superior gain and collector efficiency, making it an ideal choice for Class C power amplifiers used in po...
Mfg:ST Vendor:Other Category:Other
The SD1893-03 is a28 V silicon NPN planar tran-sistor designed for INMARSAT and other 1.6 GHz SATCOM applications. The device utilizes poly-silicon site ballasting with a gold metallized die to achieve high reliability a...
Vendor:Other Category:Other
The SD1893 is a 28V NPN silicon transistor designed for MARISAT applications.Features of the SD1893 are:(1)frequency is 1.65GHz;(2)power out is 10.0W;(4)power gain is 11.0dB;(5)voltage is 28.0V;(6)hermetic stripline pack...
Mfg:ST Vendor:Other Category:Other
The SD1891-03 is a 28 V silicon NPN transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and rugg...
Vendor:Other Category:Other
The SD1891 is a 28V NPN silicon transistor designed for MARISAT applications.Features of the SD1891 are:(1)frequency is 1.65GHz;(2)power out is 3.0W;(4)power gain is 11.5dB;(5)voltage is 28.0V;(6)hermetic stripline packa...
Mfg:ST Vendor:Other Category:Other
The SD1888-03 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. Agold metallizedemit-ter-ballasted die geometry is employed providing high gain and efficiency while en...
Vendor:Other Category:Other
The SD1805 is an NPN silicon transistor designed for high gain linear performance at 2.0GHz.Features of the SD1805 are:(1)frequency is 2.3GHz;(2)power out is 0.2W;(4)power gain is 11dB;(5)voltage is 15V;(6)IC is 80mA;(7)...
Mfg:ST Pack:M135 Vendor:Other Category:Other
The SD1733 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
Mfg:ASI D/C:07+ Vendor:Other Category:Other
The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposers.
Mfg:ST Vendor:Other Category:Other
The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
Mfg:N/A Pack:N/A D/C:09+ Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR NPN RF HF SSB M174The SD1731 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications.This device utilizes emitter ballasting for improved ruggedness and reliability
Mfg:ST Vendor:Other Category:Other
The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability.
Mfg:ST Pack:(LX)high-frequency Vendor:Other Category:Other
The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
Mfg:ST Pack:M177 Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR NPN RF HF SSB M177The SD1728 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
Mfg:ST Pack:M164 Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR NPN RF HF SSB M164The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
Vendor:Other Category:Other
The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
Vendor:Other Category:Other
Vendor:Advanced Photonix Inc Category:Sensors, Transducers
PHOTODIODE RED 4.7X3.2MM TO-5
Vendor:Advanced Photonix Inc Category:Sensors, Transducers
PHOTODIODE RED 4.7X3.2MM TO-5
Vendor:Other Category:Other
Mfg:Vishay Pack:K-PUK (DO-200AC) D/C:08+ Vendor:Other Category:Other
Standard Recovery Diodes, 2100 A
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:ST Pack:M175 Vendor:Other Category:Other
The SD1680 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications.
Vendor:Other Category:Other
Mfg:ST Vendor:Other Category:Other
The SD1660 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications.
Vendor:Other Category:Other
Mfg:ST Vendor:Other Category:Other
Designed for 900MHz cellular radio base station applications,the SD1650 exhibits high collector efficiency with excellent thermal characteristics. Double-section internal input/output matching re-sult in terminal impedan...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
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Mfg:ST Vendor:Other Category:Other
The SD1565 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The SD1565 is designed for applications requiring high peak power and low duty cycl...
Vendor:Other Category:Other
The SD1564 is a hermetically sealed,gold metallized,silicon NPN pulsed power transistor.Features of the SD1564 are:(1)designed for high power pulse applications;(2)400W at 60s pulse width,2% D.F;(3)greater than 7.5dB gai...
Mfg:ST Vendor:Other Category:Other
The SD1563 is a gold metallized silicon NPN pulse power transistor. The SD1563 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz.
Vendor:Other Category:Other
Mfg:Vishay Pack:K-PUK (DO-200AC) D/C:08+ Vendor:Other Category:Other
SD1553C..S30K, Fast Recovery Diodes (Hockey PUK Version), 1650/1825 A
Mfg:Vishay Pack:K-PUK (DO-200AC) D/C:08+ Vendor:Other Category:Other
SD1553C..S20K, Fast Recovery Diodes (Hockey PUK Version), 1650/1825 A
Vendor:Other Category:Other
Vendor:Other Category:Other
The SD1550 is a gold metallized,silicon NPN planar pulsed transistor.Features of the SD1550 are:(1)gold metallization;(2)designed for use in tacan systems;(3)extremely rugged;(4)thermally stable;(5)capable of operation a...
Vendor:Other Category:Other
Vendor:Other Category:Other
The SD1544 is a gold metallized,silicon NPN transistor.Features of the SD1544 are:(1)gold metallization;(2)hermetic stripline package;(3)1.0 W @ 2GHz with greater than 5dB gain;(4)designed for amplifiers and oscillators....
Mfg:ST Pack:M112 Vendor:Other Category:Other
The SD1542-42 is a hermetically sealed, gold metallized,silicon NPN power transistor. The SD1542-42 is designed for applications requiring high peak power and low duty cycles such as IFF. The SD1542-42 is packaged in a h...
Mfg:ST Vendor:Other Category:Other
The SD1542-04 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD1542- 04 is designed for applications requiring high peak power and low duty cycles such as IFF. The SD1542-04 is packaged in a...
Mfg:ST Pack:M112 Vendor:Other Category:Other
The SD1542 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD1542 is designed for applications requiring high peak power and low duty cycles such as IFF and DME. The SD1542 is packaged in a h...
Mfg:ST Vendor:Other Category:Other
The SD1541-09 is a gold metallized silicon NPN planar transistor. The SD1541-09 is designedfor applications requiring high peak and low duty cycles such as IFF. The SD1541-09 is packaged in a metal/ceramic package with i...
Mfg:ST Pack:M112 Vendor:Other Category:Other
The SD1541-01 is a hermetically sealed, gold metallized, silicon NPNpower transistor. The SD1541- 01 is designed for applications requiring high peak power and low duty cycles such as DME. The SD1541-01 is packaged in a ...
Mfg:ST Vendor:Other Category:Other
The SD1540-08 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1540 is packaged in a metal/ceramic package with ...
Mfg:ST Vendor:Other Category:Other
The SD1540 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1540 is packaged in a metal/ceramic package with int...
Vendor:Other Category:Other
The SD153R features:
·Snubber diode for GTO·High voltage free-wheeling diode·Fast recovery rectifier applications
Vendor:Other Category:Other
The SD153N features:
·Snubber diode for GTO·High voltage free-wheeling diode·Fast recovery rectifier applications
Mfg:ST Vendor:Other Category:Other
The SD1538-08 is a gold metallized, silicon NPN power transistor. The SD1538-08 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1538-08 is packaged in a metal/...
Mfg:ST Vendor:Other Category:Other
The SD1538-02 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1538-02 is packaged in a metal/ceramic package wi...
Vendor:Other Category:Other
The SD1536-8 is a gold metallized,silicon NPN power transistor.Features of the SD1536-8 are:(1)designed for high power pulse IFF,DME,TACAN;(2)100 W(typ) IFF 1030 to 1090MHz;(3)90 W(min) DME 1025 to 1150MHz;(4)90 W(typ) T...
Vendor:Other Category:Other
The SD1534-08 is a gold metallized, silicon NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The feature of SD1534-08 are as follows: (1)designed fo...
Mfg:ST Vendor:Other Category:Other
The SD1530-08 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1530-08 is pack-aged in the .250" input matched h...
Mfg:ST Vendor:Other Category:Other
The SD1530-01 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1530-01 is pack-aged in the .280" input matched s...
Mfg:ST Vendor:Other Category:Other
The SD1528-08 is a gold metallized, silicon NPN power transistor. The SD1528-08 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1528-08 is packaged in the .250...
Vendor:Other Category:Other
The SD1527-08 is a gold metallized, silicon NPN power transistor. The feature of SD1527-08 are as follows: (1)designed for high power pulse IFF and TACAN; (2)5.0W IFF 1030-1090MHz; (3)4.0W TACAN 960-1215MHz; (4)greater t...
Vendor:Other Category:Other
The SD1526-01 is a a gold metallized, silicon NPN power transistor. The feature of SD1526-01 are as follows: (1)designed for high power pulse IFF, DME, TACAN; (2)6.0W IFF 1030-1090MHz; (3)5.0W IFF 1025-1150MHz; (4)4.0W I...
Vendor:Other Category:Other
The SD1524-1 is a gold metallized,silicon NPN power transistor.Features of the SD1524-1 are:(1)designed for high power pulse IFF,DME,TACAN;(2)3.0 W(typ) IFF 1030 to 1090MHz;(3)2.7 W(min) DME 1025 to 1150MHz;(4)2.3 W(typ)...
Vendor:Other Category:Other
The Sd1522-3 is a gold metalized, silicon NPN power transistor. It is designed for applications requiring peak power and duty cycles such as IFF, DME, TACAN. It is packaged in the 280 input matched stripline package resu...
Vendor:Other Category:Other
The SD1520-8 is a gold metallized,silicon NPN pulsed power transistor.Features of the SD1520-8 are:(1)designed for pulse power IFF,DME,TACAN;(2)0.25 WATT(typ) IFF 1030 to 1090MHz;(3)0.20 WATT(min) DME 1025 to 1150MHz;(4)...
Vendor:Other Category:Other
The SD1512 is a gold metallized silicon NPN planar pulsed transistor that has been designed for use in extended pulse width and duty cycle applications from 960 to 1220MHz.
Features of the SD1512 are:(1)designed for use...
Vendor:Other Category:Other
Features of the SD1511-8 are:(1)common emitter;(2)12W typical CW;(3)gold metallization;(4)emitter ballast;(5)30:1 load vawr capability.
The absolute maximum ratings of the SD1511-8 can be summarized as:(1):the symbol is...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:Vishay Pack:B-PUK (DO-200AB) D/C:08+ Vendor:Other Category:Other
SD1500C..L, Standard Recovery Diode, 1600 A
Vendor:Other Category:Other
Vendor:Other Category:Other
The SD1500 is a gold metallized silicon NPN Planar Pulsed Transistor thae has been designed for use in extended pulse width and duty cycle applications from 1200 to 1400MHz.This device is extremely rugged, thermally atab...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The SD1496-3 is a 24V epitaxial silicon NPN planar transistor designed primarily for amplifier applications in the 900-960MHz frequency range. The feature of SD1496-3 are as follows: (1)class C transistor; (2)frequency: ...
Vendor:Other Category:Other
The SD1496 is an NPN silicon epitaxial planar transistor designed for base station applications in the 860-900MHz frequency range. The feature of SD1496 are as follows: (1)class C transistor; (2)frequency: 900MHz; (3)vol...
Vendor:Other Category:Other
The SD14950-3 is a 24V epitaxial silicon NPN planar transistor designed primarily for amplifier applications in the 900-960MHz frequency range. The feature of SD14950-3 are as follows: (1)class C transistor; (2)frequency...
Vendor:Other Category:Other
The SD1495 is a rf and microwave transistors.It is a 24V epitaxial silicon planar transistor designed for base station applications in cellular telephont systems.The SD1495 uses matched input technology tuned Q to increa...
Mfg:ASI D/C:07+ Vendor:Other Category:Other
The SD1492 is a gold metallized epitaxial siliconNPN planar transistor using diffused emitter ballastresistors for high linearity Class AB operation inUHF and Band IV, V television transmitters andtransposers.
Mfg:ASI D/C:07+ Vendor:Other Category:Other
The SD1490 is a gold metallized epitaxial siliconNPN planar transistor using diffused emitter ballastresistors for high linearity Class A operation inUHF and Band IV, V television transmitters andtransposers
Mfg:ASI D/C:07+ Vendor:Other Category:Other
The SD1489 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in UHF and Band IV, V television transmitters and transposers.
Mfg:ST Pack:MODULE D/C:150 Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR NPN RF BIPO VHF 6LEADThe SD1488 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for broadband applications in the 450 - 512 MHz land mobile radio band. This device utilizes diffused emitter resistors to withsta...
Mfg:ST Pack:M174 Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR PWR RFThe SD1487 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-theart diffused emitter ballasting to achieve extreme ruggedness under severe...
Mfg:ASI D/C:07+ Vendor:Other Category:Other
The SD1485 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in VHF and Band III television transmitters and transposers.
Mfg:ST Pack:M111 Vendor:Other Category:Other
The SD1480 is a common emitter 28 V Class Cepitaxial silicon NPN planar transistor designedprimarily for VHF communications applications.This internally matched device incorporates dif-fused emitter ballasting resistors ...
Mfg:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR NPN RF BIPO VHF 6LEADThe SD1477 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF FM communications. This device utilizes diffused emitter resistors to withstand extremely high VSWR under rated operating ...
Mfg:ST Pack:M165 Vendor:Other Category:Other
The SD1476 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in VHF and Band I television transmitters and transposers.
Vendor:Other Category:Other
The SD1468 is RF and microwave transistors wideband VHF-UHF class c. The type SD1468 is a 28V gold metallized, epitaxial silioon NPN plannar transisor designed primarily for UHF communications. this device is utilizes di...
Vendor:Other Category:Other
The SD1462 is RF and microwave transistors wideband VHF-UHF class c. The type SD1462 is a 28V epitaxial silioon NPN plannar transisor designed primarily for UHF communications. this device is utilizes diffused emitter op...
Mfg:110 Pack:ST Vendor:Other Category:Other
The SD1143 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM broadcast transmitters. This device utilizes diffused emitter resistors to achieve infinite VSWR at rated operating conditi...
Vendor:Other Category:Other
The SD-14595 is a kind of low-cost, high reliability, synchro- or resolver-to-digital converter with 14-bit-only, 16-bit-only or pin programmable 14-bit or 16-bit resolution. It is available in a 36-pin DDIP package. It ...
Mfg:ST Pack:M164 Vendor:Other Category:Other
The SD1459 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in VHF and Band III television transmitters and transposers.
Mfg:ST Pack:M111 Vendor:Other Category:Other
The SD1458 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in VHF and band III television transmitters and transposers.
Mfg:ST Pack:M174 Vendor:Other Category:Other
The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF broadcast transmitters.This device utlizes diffused emitter resistors to achieve infinite VSWR at rated operating condition...
Mfg:ST Pack:M130 Vendor:Other Category:Other
The SD1455 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in VHF and Band III television transmitters and transposers.
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANSISTOR NPN RF BIPO UHF M113The SD1446 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstand...
Vendor:Other Category:Other
The SD1444 is RF and microwave transistors 450-512MHz classic. mobile applocations. The type SD1444 is a 12.5V epitaxial silioon NPN plannar transisor designed primarily for UHF communications. this device is package in ...
Vendor:Other Category:Other
The SD1441 is RF and microwave transistors 130-230MHz classic. mobile applocations. The type SD1441 is a 12.5V epitaxial silioon NPN plannar transisor designed primarily for UHF communications. It withstands infinite VSW...
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