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Index H : HGTG30N120CN,HGTG27N120BN,HGT1S12N60B3S,
HGTG30N120CN
D/C:07+ Vendor:Other Category:Other
The HGTG30N120CN is a Non-PunchT hrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This HGTG30N120CN h...HGTG27N120BN
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT NPT N-CH 1200V 72A TO-247The HGTG27N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This HGTG27N120BN h...HGTG24N60D1D
Mfg:INTESIL Pack:TO-3P D/C:08+ Vendor:Other Category:Other
The HGTG24N60D1D IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG24N60D1D has the high input impedance of MOSFET and the low on-state conduction...HGTG24N60D1
Mfg:INTESIL Pack:TO-3P D/C:08+ Vendor:Other Category:Other
The HGTG24N60D1 IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss o...HGTG20N60C3R
Mfg:HARRIS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGTG20N60C3R devices demonstrate RUGGED performance ...HGTG20N60C3D
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT UFS N-CHAN 600V 45A TO-247The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This HGTG20N60C3D has the high input impedance of a MOSFET and the low on-state conduction lo...HGTG20N60C3
Mfg:INTESIL Pack:TO-3P D/C:08+ Vendor:Other Category:Other
This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTG20N60C3 devices have the high input impedance of a MOSFET and the low on-state conduction ...HGTG20N60B3D
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH UFS 600V 20A TO-247The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG20N60B3D has the high input impedance of a MOSFET and the low on-state conduction loss...HGTG20N60B3
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT UFS N-CHAN 600V 40A TO-247The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGT1S20N60B3S, the HGTP20N60B3 and ...HGTG20N60A4D
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 70A TO247The HGTG20N60A4D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolartransistors. This HGTG20N60A4D has the high input impedance of aMOSFET and the low on-state conduction loss ...HGTG20N60A4
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 70A TO247The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTG20N50C1D devices have the high input impedance of a MOSFET and the lo...HGTG20N50C1D
Mfg:FAIRCHIL Pack:TO247 D/C:06+ Vendor:Other Category:Other
The HGTG20N50C1D IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG20N50C1D has the high input impedance of a MOSFET and the low on-state conduction...HGTG20N120E2
Mfg:FSC Pack:TO-247 D/C:05+ Vendor:Other Category:Other
The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG20N120E2 has the high input impedance of a MOSFET and the low on-state conduction los...HGTG20N120CND
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This HGTG20N120CND...HGTG20N120CN
Pack:7850 D/C:Intersil Vendor:Other Category:Other
HGTG20N120C3D
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This HGTG20N120C3D has the high input impedance of a MOSFET and the low on-state conduction ...HGTG20N100D2
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG20N100D2 has the high input impedance of a MOSFET and the low on-state conduction loss...HGTG18N120BND
Mfg:FAIRCHILD Pack:TO-3P D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT NPT N-CHAN 1200V 54A TO-247The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. HGTG18N120BND is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This devi...HGTG18N120BN
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT NPT N-CH 1200V 54A TO-247The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. HGTG18N120BN is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device...HGTG15N120C3D
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. HGTG15N120C3D has the high input impedance of a MOSFET and the low on-state conduction loss o...HGTG15N120C3
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTG15N120C3, HGTP15N120C3, HGT1S15N120C...HGTG12N60D1D
Mfg:HAR Vendor:Other Category:Other
The HGTG12N60D1D IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG12N60D1D has the high input impedance of a MOSFET and the low on-state conductio...HGTG12N60C3D
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT UFS N-CHAN 600V 24A TO-247The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG12N60C3D has the high input impedance of a MOSFET and the low on-state conduction loss...HGTG12N60B3D
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These HGTG12N60B3D devices have the high input impedance of a MOSFET and the low on-state conduction l...HGTG12N60B3
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These HGTG12N60B3 devices have the high input impedance of a MOSFET and the low on-state conduction lo...HGTG12N60A4D
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 54A TO247The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switchingdevices combining the best features of MOSFETs andbipolar transistors. These HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS devices hav...HGTG12N60A4
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH SMPS 600V 54A TO247The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A devices ha...HGTG11N120CND
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT NPT N-CH 1200V 43A TO-247The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has th...HGTG11N120CN
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT NPT N-CH 1200V 43A TO-247The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipola...HGTG10N120BND
Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT N-CH NPT 1200V 35A TO-247The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. HGTG10N120BND is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This devi...HGTG10N120BN
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar...HGTD8P50G1,HGTD8P50G1S
Vendor:Other Category:Other
The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This ...HGTD7N60C3S
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
HGTD7N60C3
Mfg:FAIRCHILD/INTERSIL Pack:TO Vendor:Other Category:Other
The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 devices have the high...HGTD7N60B3S
Mfg:HARRIS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
HGTD7N60A4S
Pack:7850 D/C:Intersil Vendor:Other Category:Other
HGTD6N50E1S
Mfg:HARRIS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators a...HGTD6N50E1
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators a...HGTD6N40E1S
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators a...HGTD6N40E1
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators a...HGTD3N60C3S
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTD3N60C3 and HGTD3N60C3S are MOS gated highvoltage switching devices combining the best features oMOSFETs and bipolar transistors. These HGTD3N60C3 and HGTD3N60C3S devices have thehigh input impedance of a MOSFET...HGTD3N60C3
Mfg:Harris Pack:Original Vendor:Other Category:Other
The HGTD3N60C3 and HGTD3N60C3S are MOS gated highvoltage switching devices combining the best features oMOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conduct...HGTD3N60B3S
Mfg:HARRIS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
HGTD3N60A4S
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
HGTD2N120CNS
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar ...HGTD2N120BNS
Mfg:FSC Pack:04+ D/C:TO-252 Vendor:Other Category:Other
The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar ...HGTD1N120CNS
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors...HGTD1N120BNS
Vendor:Other Category:Other
The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. Thi...HGTD10N50F1S
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulato...HGTD10N50F1
Pack:7850 Vendor:Other Category:Other
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulato...HGTD10N40F1S
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulato...HGTD10N40F1
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulato...HGTA32N60E2
Mfg:HAR Vendor:Other Category:Other
The HGTA32N60E2 IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss o...HGT5A40N60A4D
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
HGT5A27N120BN
Mfg:KA/INF Pack:TO Vendor:Other Category:Other
The HGTG27N120BN and HGT5A27N120BN are Non- Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. T...HGT4E30N60B3DS
Mfg:KA/INF Pack:TO Vendor:Other Category:Other
HGT1Y40N60B3D
Pack:2 D/C:TO3PL Vendor:Other Category:Other
The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGT1Y40N60B3D device has the high input impedance of a MOSFET and the low on-state conduc...HGT1S7N60C3DS
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT UFS N-CH 600V 14A TO-263ABThe HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS devices have...HGT1S7N60C3D
Mfg:HARRIS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS devices hav...HGT1S7N60B3S
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
HGT1S7N60B3DS
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
HGT1S7N60A4S9A,
Vendor:Other Category:Other
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 devices have the...HGT1S7N60A4S9A
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
HGT1S7N60A4S
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
HGT1S7N60A4DS
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT SMPS N-CHAN 600V TO-263ABHGT1S5N120CNS
Mfg:HARRIS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through (NPT) IGBT designs. HGTP5N120CN and HGT1S5N120CNS are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs a...HGT1S5N120CNDS
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs. HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are new members of the MOS gated high voltage switching IGBT family. IGBTs combin...HGT1S5N120BNS
Mfg:INFIN Pack:06+ D/C:800/REEL Vendor:Other Category:Other
The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through (NPT) IGBT designs. HGTP5N120BN and the HGT1S5N120BNS are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of M...HGT1S5N120BNDS
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar...HGT1S3N60C3DS
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state...HGT1S3N60C3D
Mfg:KA/INF Pack:TO Vendor:Other Category:Other
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and th...HGT1S3N60B3S
Mfg:INFIN Pack:06+ D/C:800/REEL Vendor:Other Category:Other
HGT1S3N60B3DS
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
HGT1S3N60A4S
Pack:7850 D/C:Intersil Vendor:Other Category:Other
HGT1S3N60A4DS
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
HGT1S2N120CNS
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar ...HGT1S2N120CNDS
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. ...HGT1S2N120CN
Mfg:INFIN Pack:06+ D/C:800/REEL Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT NPT N-CH 1200V 13A I2PAKThe HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. HGT...HGT1S2N120BNS
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar ...HGT1S2N120BNDS
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. ...HGT1S20N60C3S
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGT1S20N60C3S have the high input impedance of a MOSFET and the low on-state conduction loss o...HGT1S20N60C3RS
Mfg:KA/INF Pack:TO Vendor:Other Category:Other
This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGT1S20N60C3RS demonstrate RUGGED performance capabi...HGT1S20N60C3R
Mfg:HARRIS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGT1S20N60C3R demonstrate RUGGED performance capabil...HGT1S20N60B3S
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedan...HGT1S20N60A4S9A
Mfg:TO-263(D2PAK) Pack:7850 D/C:FAIRCHILD Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
IGBT SMPS N-CHAN 600V TO-263ABThe HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss...HGT1S20N35G3VLS
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This HGT1S20N35G3VLS N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGT1S20N35G3VLS include an active voltage...HGT1S20N35G3VL
Pack:7850 D/C:Intersil Vendor:Other Category:Other
This HGT1S20N35G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGT1S20N35G3VL include an active voltage c...HGT1S1N120CNDS
Mfg:HARRIS Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transisto...HGT1S1N120BNDS
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transisto...HGT1S15N120C3S
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of...HGT1S15N120C3
Pack:7850 D/C:Intersil Vendor:Other Category:Other
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of...HGT1S14N41G3VLS
Vendor:Other Category:Other
This HGT1S14N41G3VLS N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGT1S14N41G3VLS include an active voltag...HGT1S14N40F3VLS
Mfg:FAIRCHILD Pack:05+ D/C:TO-263AB Vendor:Other Category:Other
This HGT1S14N40F3VLS N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the...HGT1S14N37G3VLS
Mfg:KA/INF Pack:TO Vendor:Other Category:Other
This HGT1S14N37G3VLS N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the ...HGT1S14N36G3VLS
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This HGT1S14N36G3VLS N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the ...HGT1S14N36G3VL
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
This HGT1S14N36G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the c...HGT1S12N60C3S
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP12N60C3 and HGT1S12N60C3S devices have the high input impedance of...HGT1S12N60C3DS
Mfg:INFIN Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This HGT1S12N60C3DS family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The HGT1S12N60C3DS device has the high input impedance of a MOSFET and the low on-state...HGT1S12N60C3
Mfg:KA/INF Pack:TO Vendor:Other Category:Other
The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S devices have...HGT1S12N60B3S
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP12N60B3 and HGT1S12N60B3S devices have the high input impedance of...