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CXL1510M,CXL1506N,CXG1101TN,
CXL1510M
Mfg:SONY D/C:03+ Vendor:Other Category:Other
The CXL1510M is an IC developed for use in conjunction with Y/C signal processing ICs for multi systems. This CCD delay line provides the comb filter output for eliminating the chrominance signal cross talk and 1H delay ...CXL1506N
Vendor:Other Category:Other
The CXL1506N is a CMOS-CCD delay line developed for video signal processing. Usage in conjunction with an external low pass filter provides 1H and 2H delay signals simultaneously (For PAL signals).CXL1506M
Mfg:SONY Pack:SMD-16 Vendor:Other Category:Other
The CXL1506M/N is a CMOS-CCD delay line developed for video signal processing. Usage in conjunction with an external low pass filter provides 1H and 2H delay signals simultaneously (For PAL signals).CXL1505M
Mfg:SONY Pack:800 Vendor:Other Category:Other
CXL1505M are CMOS-CCD signal processors developed for CCD camera complementary color filter array processing system.CXL1503M 1H ×4 301.5 bit CCD delay lineCXL1505M 1H×4 453.5 bit CCD delay lineCXL1504M
Mfg:SONY Pack:SOP D/C:09+ Vendor:Other Category:Other
The CXL1504M is a delay line used in conjunction with an external low-pass filter. Through negative phase input and positive phase output 1H delay time is obtained for NTSC signals.CXL1503M
Mfg:SONY Pack:SOP D/C:09+ Vendor:Other Category:Other
CXL1503M/1505M are CMOS-CCD signal processors developed for CCD camera complementary color filter array processing system.CXL1503M 1H ×4 301.5 bit CCD delay lineCXL1505M 1H×4 453.5 bit CCD delay lineCXL1502M
Mfg:SONY Pack:SOP/30 D/C:00+ Vendor:Other Category:Other
The CXL1502M is a CMOS-CCD signal processor designed for 8-mm video signal processing. combination with the 8-mm video Y/C signal processing IC CXA1200Q, this IC configures a comb filter for Y/C separation in recording a...CXL1501M
Mfg:SONY Vendor:Other Category:Other
The CXL1501M is a CMOS-CCD signal processor designed for 8-mm VCR video signal processing combination with the 8-mm VCR video Y/C signal processing IC CXA1200Q, this IC configures a comb filter for Y/C separation in reco...CXL1008P
Mfg:SONY Pack:DIP-28 D/C:08+ Vendor:Other Category:Other
CXL1008P are CMOS-CCD signal processors developed for the variable-speed video signal processor for home-use 8mm VCRs.CXL1008M
Mfg:SONY Vendor:Other Category:Other
CXL1008M/P are CMOS-CCD signal processors developed for the variable-speed video signal processor for home-use 8mm VCRs.CXK79M36C162GB
Vendor:Other Category:Other
The CXK79M36C162GB is a high speed CMOS synchronous static RAM with common I/O pins. It is manufactured in compliance with the JEDEC-standard 209 pin BGA package pinout defined for SigmaRAM™ devices. It integrates ...CXK77V3211Q
Vendor:Other Category:Other
The CXK77V3211Q is a 32K× 32 high performance synchronous SRAM with a 2-bit burst counter output register. All synchronous inputs pass through register controlled by a positive-edge-triggered single clock input (CLK). Th...CXK77V1840GB-8
Vendor:Other Category:Other
The CXK77V1840GB-8 is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed SRAM and output registers onto a si...CXK77V1840GB-12
Vendor:Other Category:Other
The CXK77V1840GB-12 is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed SRAM and output registers onto a s...CXK77V1840GB-10
Mfg:N/A Pack:BGA D/C:08+ Vendor:Other Category:Other
The CXK77V1840GB-10 is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed SRAM and output registers onto a s...CXK77V1810TM-9
Vendor:Other Category:Other
The CXK77V1810TM-9 is a high-speed CMOS synchronous static RAM with common I/O pins, organized as 65,536-words-by-18-bits. This synchronous SRAM integrates input registers, high-speed SRAM and output registers onto a sin...CXK77V1810TM-10
Vendor:Other Category:Other
The CXK77V1810TM-10 is a high-speed CMOS synchronous static RAM with common I/O pins, organized as 65,536-words-by-18-bits. This synchronous SRAM integrates input registers, high-speed SRAM and output registers onto a si...CXK77V1810GB-9
Vendor:Other Category:Other
The CXK77V1810GB-9 is a high-speed CMOS synchronous static RAM with common I/O pins, organized as 65,536-words-by-18-bits. This synchronous SRAM integrates input registers, high-speed SRAM and output registers onto a sin...CXK77V1810GB-10
Vendor:Other Category:Other
The CXK77V1810GB-10 is a high-speed CMOS synchronous static RAM with common I/O pins, organized as 65,536-words-by-18-bits. This synchronous SRAM integrates input registers, high-speed SRAM and output registers onto a si...CXK77P36E160GB
Vendor:Other Category:Other
The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integr...CXK77P18E160GB
Vendor:Other Category:Other
The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integr...CXK77K36R320GB
Vendor:Other Category:Other
The CXK77K36R320GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 36 bits. This synchronous SRAM integra tes input registers, high speed RAM, output registers, and a one...CXK77K18R320GB
Vendor:Other Category:Other
The CXK77K18R320GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 2,097,152 words by 18 bits. This synchronous SRAMs integrates input registers, high speed RAM, output registers, and a one...CXK77B3641AGB
Vendor:Other Category:Other
The CXK77B3641AGB (organized as 131,072 words by 36 bits) and the CXK77B1841A (organized as 262,144 words by 18 bits) are high speed BiCMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate ...CXK77B3640GB
Vendor:Other Category:Other
The CXK77B3640GB is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and ...CXK77B3640AGB
Vendor:Other Category:Other
The CXK77B3640AGB (organized as 131,072 words by 36 bits) and the CXK77B1840A (organized as 262,144 words by 18 bits) are high speed BiCMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate ...CXK77B3611AGB-6
Vendor:Other Category:Other
The CXK77B3611AGB-6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and featur...CXK77B3611AGB-5
Mfg:N/A Pack:BGA D/C:08+ Vendor:Other Category:Other
The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and feat...CXK77B3611AGB
Vendor:Other Category:Other
The CXK77B3611AGB is designed as one kind of high speed Bi-CMOS synchronous static RAM that integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system t...CXK77B3610GB-7
Mfg:N/A Pack:BGA D/C:08+ Vendor:Other Category:Other
The CXK77B3610GB-7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and feature...CXK77B3610GB-6
Mfg:SONY Pack:BGA D/C:10 Vendor:Other Category:Other
The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and featu...CXK77B1841GB
Vendor:Other Category:Other
The CXK77B1841GB is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and ...CXK77B1841AGB
Vendor:Other Category:Other
The CXK77B1841AGB (organized as 131,072 words by 36 bits) and the CXK77B1841A (organized as 262,144 words by 18 bits) are high speed BiCMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate ...CXK77B1840GB
Vendor:Other Category:Other
The CXK77B1840GB is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and ...CXK77B1840AGB
Vendor:Other Category:Other
The CXK77B1840AGB (organized as 131,072 words by 36 bits) and the CXK77B1840A (organized as 262,144 words by 18 bits) are high speed BiCMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate ...CXK77B1810AGB-5
Mfg:N/A Pack:BGA D/C:08+ Vendor:Other Category:Other
CXK77B1810AGB
Vendor:Other Category:Other
CXK77920YM-12
Vendor:Other Category:Other
The CXK77920YM-12 is a high speed CMOS synchronous static RAM with common l/O pins, organized as 262144-word-by-9-bit. This synchronous SRAM integrates input registers, high speed SRAM and output registers onto a single ...CXK77920YM-11
Vendor:Other Category:Other
The CXK77920YM-11 is a high speed CMOS synchronous static RAM with common l/O pins, organized as 262144-word-by-9-bit. This synchronous SRAM integrates input registers, high speed SRAM and output registers onto a single ...CXK77920TM-12
D/C:96 Vendor:Other Category:Other
The CXK77920TM-12 is a high speed CMOS synchronous static RAM with common l/O pins, organized as 262144-word-by-9-bit. This synchronous SRAM integrates input registers, high speed SRAM and output registers onto a single ...CXK77920TM-11
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The CXK77920TM-11 is a high speed CMOS synchronous static RAM with common l/O pins, organized as 262144-word-by-9-bit. This synchronous SRAM integrates input registers, high speed SRAM and output registers onto a single ...CXK77910AYM
Vendor:Other Category:Other
The CXK77910AYM are high-speed CMOS synchronous static RAMs with common I/O pins, organized as 131,072-word-by-9-bit. These synchronous SRAMs integrate input registers, high speed SRAM and output registers onto a single ...CXK77910ATM
Mfg:SONY Pack:TSOP44 D/C:2007+ Vendor:Other Category:Other
The CXK77910ATM/AYM are high-speed CMOS synchronous static RAMs with common I/O pins, organized as 131,072-word-by-9-bit. These synchronous SRAMs integrate input registers, high speed SRAM and output registers onto a sin...CXK5V8512TM
Vendor:Other Category:Other
The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-bits.A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.Operating on a single 3.3V ...CXK5V8257BYM
Vendor:Other Category:Other
The CXK5V8257BYM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability.Operating on a ...CXK5V8257BTM
Vendor:Other Category:Other
The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability.Operatin...CXK5V8257BM
Vendor:Other Category:Other
The CXK5V8257BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability.Operating on a s...CXK5V81000ATM
Vendor:Other Category:Other
The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits.A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.Operating on a single 3....CXK5V16100TM-85LLX
Mfg:SONY Pack:TSOP D/C:2005+ Vendor:Other Category:Other
CXK5V16100TM-85LLX is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for high speed and low power consumption applica...CXK5V16100TM-10LLX
Mfg:ROHM Pack:01+ D/C:N/A Vendor:Other Category:Other
CXK5V16100TM-10LLX is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for high speed and low power consumption applica...CXK5T8512TN
Vendor:Other Category:Other
The CXK5T8512TN is a high speed CMOS static RAM organized as 65536-words by 8-bits. Special feature are low power consumption and high speed.The CXK5T8512TN is a suitable RAM for portable equipment with battery back up.CXK5T8512TM
Vendor:Other Category:Other
The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits. Special feature are low power consumption and high speed.The CXK5T8512TM/TN is a suitable RAM for portable equipment with battery bac...CXK5T8257BYM
Vendor:Other Category:Other
The CXK5T8257BYM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.Special feature are low power consumption and high speed.The CXK5T8257BYM is a suitable RAM for portable equipment with batte...CXK5T8257BTM
Vendor:Other Category:Other
The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.Special feature are low power consumption and high speed.The CXK5T8257BTM/BYM/BM is a suitable RAM for portable equipm...CXK5T8257BM
Vendor:Other Category:Other
The CXK5T8257BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.Special feature are low power consumption and high speed.The CXK5T8257BM is a suitable RAM for portable equipment with battery...CXK5T81000AYN-12LLX
Vendor:Other Category:Other
The CXK5T81000AYN-12LLX is a high speed CMOS static RAM organized as 131072-words by 8-bits.Special feature are low power consumption and high speed.The CXK5T81000AYN-12LLX is a suitable RAM for portable equipment with b...CXK5T81000AYM
Vendor:Other Category:Other
The CXK5T81000AYM is a high speed CMOS static RAM organized as 131072-words by 8-bits.Special feature are low power consumption and high speed.The CXK5T81000AYM is a suitable RAM for portable equipment with battery back ...CXK5T81000ATN-10LLX/
Vendor:Other Category:Other
The CXK5T81000ATN-10LLX/ is a high speed CMOS static RAM organized as 131072-words by 8-bits.Special feature are low power consumption and high speed.The CXK5T81000ATN-10LLX/ is a suitable RAM for portable equipment with...CXK5T81000ATM
Vendor:Other Category:Other
The CXK5T81000ATM/AYM/AM is a high speed CMOS static RAM organized as 131072-words by 8-bits.Special feature are low power consumption and high speed.The CXK5T81000ATM/AYM/AM is a suitable RAM for portable equipment with...CXK5T81000AM
Vendor:Other Category:Other
The CXK5T81000AM is a high speed CMOS static RAM organized as 131072-words by 8-bits.Special feature are low power consumption and high speed.The CXK5T81000AM is a suitable RAM for portable equipment with battery back up...CXK5T16100TM
Mfg:SONY Pack:SSOP D/C:98+ Vendor:Other Category:Other
The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits.Special feature are low power consumption and high speed.The CXK5T16100TM is a suitable RAM for portable equipment with...CXK5B81020J
Vendor:Other Category:Other
CXK5B81020J/TM is a high speed 1M bit Bi-CMOS static RAM organized as 131072 words by 8 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.CXK5B41020TM-12
Vendor:Other Category:Other
CXK5B41020TM-12 is a high speed 1M bit Bi-CMOS static RAM organized as 262144 words by 4 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.CXK5B18120TM-12
Mfg:SONY Pack:TSOP D/C:96+ Vendor:Other Category:Other
CXK5B18120TM-12 is a high speed 1M bit Bi-CMOS static RAM organized as 65536 words by 18 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.CXK5B16120TM
Vendor:Other Category:Other
CXK5B16120TM is a high speed 1M bit Bi-CMOS static RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.CXK5B16120J
Vendor:Other Category:Other
CXK5B16120J/TM is a high speed 1M bit Bi-CMOS static RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.CXK591000YM
Vendor:Other Category:Other
The CXK591000YM is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.Special feature are low ...CXK591000TM
Pack:TSOP Vendor:Other Category:Other
The CXK591000TM/YM/M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.Special feature are...CXK591000M
Vendor:Other Category:Other
The CXK591000M is a high speed CMOS static RAM organized as 131,072-words by 9 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.Special feature are low p...CXK58512TM
Vendor:Other Category:Other
The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.Special feature are low p...CXK58512M
Vendor:Other Category:Other
The CXK58512M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.Special feature are low powe...CXK58257P
Vendor:Other Category:Other
The CXK58257P is a 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5 V supply.This device is suitable for use in high speed and low power applications in which batte...CXK58257CTM
Vendor:Other Category:Other
The CXK58257CTM is a kind of 262,144 bits high speed CMOS static RAM organized as 32768 words by 8 bits. It is a suitable RAM for portable equipment with battery back up. There are some features CXK58257CTM as follows: ...CXK582000YM
Vendor:Other Category:Other
The CXK582000YM is a high speed CMOS static RAM organized as 262144-words by 8 bits.A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.Special feature are low po...CXK582000TM
Vendor:Other Category:Other
The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits.A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.Special feature are l...CXK582000M
Vendor:Other Category:Other
The CXK582000M is a high speed CMOS static RAM organized as 262144-words by 8 bits.A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.Special feature are low pow...CXK581000AYM
Vendor:Other Category:Other
The CXK581000AYM is a high speed CMOS static RAM organized as 131072-words by 8 bits.A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability.Special feature are low ...CXK581000ATM
Pack:TSOP Vendor:Other Category:Other
The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits.A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability.Special featur...CXK581000AP
Vendor:Other Category:Other
The CXK581000AP is a high speed CMOS static RAM organized as 131072-words by 8 bits.A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability.Special feature are low p...CXK581000AM
Mfg:SONY Pack:SOP32W D/C:2007+ Vendor:Other Category:Other
The CXK581000AM is a high speed CMOS static RAM organized as 131072-words by 8 bits.A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability.Special feature are low p...CXG7001FN
Mfg:SONY Pack:HSOF26 D/C:05+ Vendor:Other Category:Other
The CXG7001FN is a MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer.This IC is designed using the Sony's GaAs J-FET process featuring a single positive power supply operation.CXG1198AEQ
Vendor:Other Category:Other
The CXG1198AEQ is one of a range of low insertion loss, high power MMIC antenna switches for GSM/UMTS dual-mode handset. The low insertion loss serves to extend the handset talk time.The switch also contains on-chip logi...CXG1190EQ
Mfg:SONY D/C:05+ Vendor:Other Category:Other
The CXG1190EQ/AEQ are antenna switching modules that support dual mode operation for both GSM, which holds an large share worldwide, and UMTS, which is the third generation cellular phone standard. In addition to both mu...CXG1190AEQ
Mfg:SONY D/C:06+ Vendor:Other Category:Other
The CXG1190AEQ are antenna switching modules that support dual mode operation for both GSM, which holds an large share worldwide, and UMTS, which is the third generation cellular phone standard. In addition to both multi...CXG1189UR
Vendor:Other Category:Other
The CXG1189UR is a high power SPDT (Single Pole Dual Throw) switch MMIC used in wireless communication systems, for example, GSM handsets, GSM/UMTS dual mode handsets.The Sony JPHEMT CXG1189UR process is used for low ins...CXG1189AXR
Vendor:Other Category:Other
The CXG1189AXR is a high power SPDT (Single Pole Doble Throw) switch MMIC used in wireless communication systems, for example, GSM handsets, GSM/UMTS dual mode handsets. The Sony JPHEMT process is used for low insertion ...CXG1173UR
Vendor:Other Category:Other
The CXG1173UR can be used in wireless communication systems, for example, CDMA handsets, W-CDMA handsets, 2.4GHz WLAN.The CXG1173UR has on-chip logic for operation with 1 CMOS control inputs.The Sony J-FET process is use...CXG1134EN
Vendor:Other Category:Other
The CXG1134EN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless communication systems. The CXG1134EN can be operated by one CMOS control line. The Sony GaAs J-FET process is used for lo...CXG1131ER
Vendor:Other Category:Other
The CXG1131ER is a high power antenna switch MMIC for PDC full packet 1.5GHz handsets. This IC is suited to connect Tx/Rx/duplexer to one of 4 antennas.The CXG1131ER has on-chip logic circuit for operation with 4 CMOS in...CXG1130AER
Vendor:Other Category:Other
The CXG1130AER is a triple low noise amplifier/ dual mixer. This IC is designed using the Sony's GaAs J-FET process.CXG1127ER
Vendor:Other Category:Other
The CXG1127ER is a high power antenna switch MMIC for PDC 800MHz and 1.5GHz dual phone. The CXG1127ER is suited to connect 2Tx/3Rx to one of 4 antennas. The CXG1127ER has on-chip logic circuit for operation with 5 CMOS i...CXG1125ER
Vendor:Other Category:Other
The CXG1125ER is a high power antenna switch MMIC for PDC dual 800MHz and 1.5GHz. This IC is suited to connect 2Tx/3Rx to one of 4 antennas equipped with full packet mode. The CXG1125ER has on-chip logic circuit for oper...CXG1122EN
Vendor:Other Category:Other
The CXG1122EN is one of a range of low insertion loss, high power MMIC antenna switches for GSM/ GPRS triple-band, dual-band (CXG1121TN) and applications. The low insertion loss on transmit means increased talk time as t...CXG1121TN
Vendor:Other Category:Other
The CXG1121TN is one of a range of low insertionloss, high power MMIC antenna switches for GSM/GPRS dual-band application. The low insertion losson transmit means increased talk time as the Txpower amplifier can be opera...CXG1117K
Vendor:Other Category:Other
The CXG1117K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process.CXG1115ER
Mfg:SONY D/C:617 Vendor:Other Category:Other
The CXG1115ER is a DPDT*1 antenna switch MMIC. While conventional single band systems use a SPDT*2 switch, the CXG1100TN supports dualband systems with DPDT operation. In this device, Sony integrated logic circuits on th...CXG1111EN
Vendor:Other Category:Other
The CXG1111EN is a mixer MMIC for the Japan CDMA cellular. This IC is designed using the Sony's GaAs J-FET process.CXG1109EN
Vendor:Other Category:Other
The CXG1109EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony's GaAs J-FET processCXG1108K
Vendor:Other Category:Other
The CXG1108K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process.CXG1101TN
Vendor:Other Category:Other
The CXG1101TN is a high power antenna switch MMIC for use in TDMA800/1900/AMPS800 triple mode handsets. One Antenna can be routed to one of AMPS, PCS Tx and PCS Rx. This IC is designed using the Sony's JFET process for l...