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Position: Home > SiteMap > Index K > Page 119

Index K : K4S643232F-R,K4S643232F,K4S51323LF-L,

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  • K4S643232F-R

    Vendor:Other    Category:Other    
    The K4S643232F-R is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S643232F-R all...

  • K4S643232F

    Vendor:Other    Category:Other    
    The K4S643232F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle ...

  • K4S643232E-TI

    Vendor:Other    Category:Other    
    The K4S643232E-TI is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S643232E-TI a...

  • K4S643232E-TE

    Vendor:Other    Category:Other    
    The K4S643232E-TE is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S643232E-TE ...

  • K4S643232E-P

    Vendor:Other    Category:Other    
    The K4S643232E-P is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S643232E-P all...

  • K4S643232E-N

    Vendor:Other    Category:Other    
    The K4S643232E-N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S643232E-N al...

  • K4S643232E

    Pack:TSSOP86    D/C:2007+    Vendor:Other    Category:Other    
    The K4S643232E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle ...

  • K4S643232C

    Vendor:Other    Category:Other    
    The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technol-ogy. Synchronous design allows precise cycle contr...

  • K4S64163LHR(B)E

    Vendor:Other    Category:Other    
    The K4S64163LHR(B)E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S64163LHR(B)E ...

  • K4S64163LH-N

    Vendor:Other    Category:Other    
    The K4S64163LH-N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S64163LH-N allows...

  • K4S64163LH-L

    Vendor:Other    Category:Other    
    The K4S64163LH-L is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S64163LH-L allow...

  • K4S64163LH-G

    Vendor:Other    Category:Other    
    The K4S64163LH-G is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S64163LH-G allows...

  • K4S64163LH-F

    Vendor:Other    Category:Other    
    The K4S64163LH-F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S64163LH-F allows...

  • K4S64163LH-C

    Vendor:Other    Category:Other    
    The K4S64163LH-C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S64163LH-C allow...

  • K4S64163LH

    Vendor:Other    Category:Other    
    The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle con...

  • K4S641632H-TC(L)75

    Vendor:Other    Category:Other    
    The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated...

  • K4S641632H-TC(L)70

    Vendor:Other    Category:Other    
    The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated...

  • K4S641632H-TC(L)60

    Vendor:Other    Category:Other    
    The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated...

  • K4S641632H

    Mfg:TSSOP    Pack:SAMSUNG    Vendor:Other    Category:Other    
    The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated...

  • K4S641632F

    Mfg:SAM    D/C:247    Vendor:Other    Category:Other    
    The K4S641632F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cyc...

  • K4S641632E

    Mfg:12000    Pack:SAMSUNG    Vendor:Other    Category:Other    
    The K4S641632E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle con...

  • K4S641632D

    Vendor:Other    Category:Other    
    The K4S641632D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle c...

  • K4S641632C

    Vendor:Other    Category:Other    
    The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cy...

  • K4S640832H-TC(L)75

    Vendor:Other    Category:Other    
    The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated...

  • K4S640832F

    Vendor:Other    Category:Other    
    The K4S640832F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle contr...

  • K4S640832E

    Vendor:Other    Category:Other    
    The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle...

  • K4S640832D

    Vendor:Other    Category:Other    
    The K4S640832D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technol-ogy. Synchronous design allows precise cycle c...

  • K4S640832C

    Vendor:Other    Category:Other    
    The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle...

  • K4S640432H-UC

    Vendor:Other    Category:Other    
    The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated...

  • K4S640432H-TC(L)75

    Vendor:Other    Category:Other    
    The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated...

  • K4S640432F

    Vendor:Other    Category:Other    
    The K4S640432F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits,fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle...

  • K4S640432D

    Vendor:Other    Category:Other    
    The K4S640432D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technol- ogy. Synchronous design allows precise cycle co...

  • K4S56323PF-F(H)G/F90

    Vendor:Other    Category:Other    
    The K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle con...

  • K4S56323PF-F(H)G/F75

    Vendor:Other    Category:Other    
    The K4S56323PF-F(H)G/F75 is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design of K4S56323PF-...

  • K4S56323PF-F(H)G/F1L

    Vendor:Other    Category:Other    
    The K4S56323PF-F(H)G/F1L is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design of K4S56323PF-...

  • K4S56323LF-FE

    Vendor:Other    Category:Other    
    The K4S56323LF-FE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits , fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56323LF-FE a...

  • K4S563233F

    Vendor:Other    Category:Other    
    The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle c...

  • K4S56163LF-ZE

    Vendor:Other    Category:Other    
    The K4S56163LF-ZE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-ZE all...

  • K4S56163LF-XE

    Vendor:Other    Category:Other    
    The K4S56163LF-XE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-XE all...

  • K4S56163LF-N

    Vendor:Other    Category:Other    
    The K4S56163LF-N is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-N allow...

  • K4S56163LF-L

    Vendor:Other    Category:Other    
    The K4S56163LF-L is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-L allow...

  • K4S56163LF-G

    Vendor:Other    Category:Other    
    The K4S56163LF-G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-G allow...

  • K4S56163LF-F

    Vendor:Other    Category:Other    
    The K4S56163LF-F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-F allow...

  • K4S56163LF-C

    Vendor:Other    Category:Other    
    The K4S56163LF-C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LF-C allow...

  • K4S56163LC-RF

    Vendor:Other    Category:Other    
    The K4S56163LC-RF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LC-RF al...

  • K4S56163LC-R(B)F/R

    Vendor:Other    Category:Other    
    The K4S56163LC-R(B)F/R is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LC-...

  • K4S56163LC-R

    Vendor:Other    Category:Other    
    The K4S56163LC-R is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LC-R allo...

  • K4S56163LC-BF

    Vendor:Other    Category:Other    
    The K4S56163LC-BF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S56163LC-BF al...

  • K4S561633F-ZL75

    Vendor:Other    Category:Other    
    The K4S561633F-ZL75 is designed as a 268,435,456 bits synchronous high data rate dynamic RAM which is organized as 4x4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous des...

  • K4S561633F-ZE

    Vendor:Other    Category:Other    
    The K4S561633F-ZE is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S561633F-ZE allows ...

  • K4S561633F-XE

    Vendor:Other    Category:Other    
    The K4S561633F-XE is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S561633F-XE allows ...

  • K4S561633F-N

    Vendor:Other    Category:Other    
    The K4S561633F-N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle cont...

  • K4S561633F-L

    Vendor:Other    Category:Other    
    The K4S561633F-L is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S561633F-L allows pr...

  • K4S561633F-G

    Vendor:Other    Category:Other    
    The K4S561633F-G is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S561633F-G allows pr...

  • K4S561633F-F

    Vendor:Other    Category:Other    
    The K4S561633F-F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S561633F-F allows pr...

  • K4S561633F-C

    Vendor:Other    Category:Other    
    The K4S561633F-C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S561633F-C allows pr...

  • K4S561633F - X(Z)N

    Vendor:Other    Category:Other    
    The K4S561633F - X(Z)N is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633F ...

  • K4S561633F - X(Z)L

    Vendor:Other    Category:Other    
    The K4S561633F - X(Z)L is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633F ...

  • K4S561633F - X(Z)G

    Vendor:Other    Category:Other    
    The K4S561633F - X(Z)G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633F ...

  • K4S561633F - X(Z)F

    Vendor:Other    Category:Other    
    The K4S561633F - X(Z)F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633F ...

  • K4S561633F - X(Z)E

    Vendor:Other    Category:Other    
    The K4S561633F - X(Z)E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633F ...

  • K4S561633F - X(Z)C

    Vendor:Other    Category:Other    
    The K4S561633F - X(Z)C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633F ...

  • K4S561633D

    Vendor:Other    Category:Other    
    The K4S561633D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633D allows p...

  • K4S561633C-RP

    Vendor:Other    Category:Other    
    The K4S561633C-RP is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633C-RP al...

  • K4S561633C-RN

    Vendor:Other    Category:Other    
    The K4S561633C-RN is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633C-RN al...

  • K4S561633C-RL

    Vendor:Other    Category:Other    
    The K4S561633C-RL is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633C-RL a...

  • K4S561633C-BL

    Vendor:Other    Category:Other    
    The K4S561633C-BL is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633C-BL al...

  • K4S561633C

    Mfg:SAMSUNG    Pack:TSOP54    Vendor:Other    Category:Other    
    The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle c...

  • K4S561632J-UC75

    Vendor:Other    Category:Other    
    The K4S561632J-UC75 is a low dropout three terminal fixed output regulator with minimum of 1A output current capability. This K4S561632J-UC75 is specifically designed to provide well regulated supply for low voltage IC a...

  • K4S561632H

    Vendor:Other    Category:Other    
    The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated w...

  • K4S561632E-UC75

    Vendor:Other    Category:Other    
    The K4S561632E-UC75 is one member of the K4S561632E family which designed as the 268,435,456 bits synchronous high data rate Dynamic RAM. This K4S561632E-UC75 is organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,30...

  • K4S561632E-UC60

    Vendor:Other    Category:Other    
    The K4S561632E-UC60 is designed as 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S5...

  • K4S561632E-TC75

    Mfg:SAMSUNG    Pack:TSOP    D/C:0422+    Vendor:Other    Category:Other    
    The K4S560432E/K4S560832E/K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x16,777,216 words by 4 bits/4 x 8,388,608 words by 8bits/4 x 4,194,304 words by 16bits, fabricated with SA...

  • K4S561632D

    Vendor:Other    Category:Other    
    The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabri-cated with SAMSUNG's high performance CMOS technology. Syn-chronous design allows precise cycle...

  • K4S561632C

    Vendor:Other    Category:Other    
    The K4S561632C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle c...

  • K4S561632B

    Vendor:Other    Category:Other    
    The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle c...

  • K4S561632A-TC1H

    Vendor:Other    Category:Other    
    The K4S561632A-TC1H is one member of the K4S561632A family which is designed as the 268,435,456 bits synchronous high data rate Dynamic RAM. Features of the K4S561632A-TC1H are:(1)64ms refresh period (8K cycle);(2)auto &...

  • K4S561632A

    Vendor:Other    Category:Other    
    The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle c...

  • K4S560832J-UC75

    Vendor:Other    Category:Other    
    The K4S560832J-UC75 is designed as 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S5...

  • K4S560832H-UC75

    Vendor:Other    Category:Other    
    The K4S560832H-UC75 is designed as 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows ...

  • K4S560832H

    Vendor:Other    Category:Other    
    The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated w...

  • K4S560832E

    Vendor:Other    Category:Other    
    The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4x16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technolo...

  • K4S560832D

    Vendor:Other    Category:Other    
    The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabri-cated with SAMSUNG's high performance CMOS technology. Syn-chronous design allows precise cycle c...

  • K4S560832C-TC

    Vendor:Other    Category:Other    
    The K4S560832C-TC is designed as one kind of 268,435,456 bits synchronous high data rate Dynamic RAM that is organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Range o...

  • K4S560832C

    Vendor:Other    Category:Other    
    The K4S560832C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle con...

  • K4S560832B

    Vendor:Other    Category:Other    
    The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle co...

  • K4S560832A-TC

    Vendor:Other    Category:Other    
    The K4S560832A-TC is designed as one kind of 268,435,456 bits synchronous high data rate Dynamic RAM that is organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Range o...

  • K4S560832A

    Vendor:Other    Category:Other    
    The K4S560832A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle co...

  • K4S560432J-UC75

    Vendor:Other    Category:Other    
    The K4S560432J-UC75 is designed as 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allow...

  • K4S560432H

    Vendor:Other    Category:Other    
    The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated w...

  • K4S560432E-UC75

    Mfg:SAMSUNG    Pack:TSOP    D/C:06+    Vendor:Other    Category:Other    
    The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CM...

  • K4S560432E-NC

    Vendor:Other    Category:Other    

  • K4S560432E

    Vendor:Other    Category:Other    
    The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4x16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technolo...

  • K4S560432D

    Vendor:Other    Category:Other    
    The K4S560432D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle co...

  • K4S560432B

    Vendor:Other    Category:Other    
    The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle co...

  • K4S560432A

    Vendor:Other    Category:Other    
    The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle co...

  • K4S51323PF-MF

    Vendor:Other    Category:Other    
    The K4S51323PF-MF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle...

  • K4S51323PF-EF

    Vendor:Other    Category:Other    
    The K4S51323PF-EF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle...

  • K4S51323LF-MC

    Vendor:Other    Category:Other    
    The K4S51323LF-MC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle...

  • K4S51323LF-L

    Vendor:Other    Category:Other    
    The K4S51323LF-L is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle ...