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Index I : IRG4BC20UD-S,IRG4BC20UDPbF ,IRFZ44NPbF,
IRG4BC20UD-S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 13A D2PAKIRG4BC20UDPbF
Vendor:Other Category:Other
IRG4BC20UDPbF is a kind of insulated gate bipolar transistor with UL trafast soft recovery diode. Here you can get some information about the feature. First is the ultrfast feature which s optimized for high operat...IRG4BC20UD
Vendor:Other Category:Other
IRG4BC20U
Mfg:IR Pack:04+ D/C:220 Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 13A TO-220ABIRG4BC20SD-S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 19A D2PAKIRG4BC20SD
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
IRG4BC20S
Mfg:IR Pack:04+ D/C:220 Vendor:Other Category:Other
IRG4BC20MD-SPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIODE 600V 18A D2PAKIRG4BC20MD-S
Vendor:Other Category:Other
IRG4BC20MDPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 18A TO220ABIRG4BC20MD
Vendor:Other Category:Other
IRG4BC20K-SPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CHAN 600V 16A D2PAK The IRG4BC20K-SPbF has 4 features.The first one is high short circuit rating optimized for motor control,tsc = 10s,@360V VCE(start),TJ = 125,VGE = 15V. The second one is combines low conduction losses with high swi...IRG4BC20KS
Mfg:IR Pack:TO Vendor:Other Category:Other
IRG4BC20KD-S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 16A D2PAKIRG4BC20KD
Mfg:IR Pack:04+ D/C:220 Vendor:Other Category:Other
IRG4BC20K
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 16A TO-220ABIRG4BC20FD-SPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIODE 600V 16A D2PAKIRG4BC20FD-S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT FAST 600V 16A D2PAKIRG4BC20FD
Vendor:Other Category:Other
IRG4BC20F
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT FAST 600V 16A TO-220ABIRG4BC15UD-SPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14A D2PAK The IRG4BC15UD-SPbF has the following features including UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching;IGBT Co-packaged with ultra-soft-recovery antiparallel diode;Industry standard D...IRG4BC15UD-S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
IRG4BC15UDPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14A TO220ABIRG4BC15UD-LPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14A TO262 The IRG4BC15UD-LPbF has the following features including UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching;IGBT Co-packaged with ultra-soft-recovery antiparallel diode;Industry standard D...IRG4BC15UD-L
Vendor:Other Category:Other
IRG4BC15UD
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
IRG4BC15MD
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
IRG4BC10UD
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 8.5A TO-220ABIRG4BC10SPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CHAN 600V 14.0A TO220ABIRG4BC10SD-SPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14A D2PAKIRG4BC10SD-S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
IRG4BC10SDPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14A TO220ABIRG4BC10SD-LPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 14.0A TO262IRG4BC10SD-L
Vendor:Other Category:Other
IRG4BC10SD
Mfg:IR Pack:N/A D/C:6000 Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 14.0A TO-220ABIRG4BC10S
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 14.0A TO-220ABIRG4BC10KDPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIO 600V 9A TO220ABIRG4BC10KD
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 9.0A TO-220ABIRG4BC10K
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 9.0A TO-220ABIRG4BAC50W
Vendor:Other Category:Other
IRG4BAC50U
Vendor:Other Category:Other
IRG4BAC50S
Vendor:Other Category:Other
IRFZ48ZS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ48ZS utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...IRFZ48ZPbF
Mfg:1971 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 61A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ48ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this d...IRFZ48ZL
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ48ZL utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...IRFZ48Z
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ48Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this desi...IRFZ48VSPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 72A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ48VSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRFZ48VS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48VS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ48V
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 72A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ48V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...IRFZ48S
Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ48S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ48RSPbF
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RSPbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching s...IRFZ48RS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RS utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed...IRFZ48RPbF
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRFZ48RLPbF
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RLPbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching sp...IRFZ48RL
Mfg:IR Pack:TO-263 D/C:5000 Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RL utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed...IRFZ48R, SiHFZ48R
Vendor:Other Category:Other
Power MOSFET IRFZ48R, SiHFZ48RIRFZ48R
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48R utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...IRFZ48NSPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 64A D2PAK The IRFZ48NSPbF and IRFZ48NLPbF has 7 features.The first one is advanced process technology.The second one is surface mount (IRFZ48NS) .The third one is low-profile through-hole(IRFZ48NL) .The fourth one is 175 op...IRFZ48NS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ48NPbF
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 64A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...IRFZ48NL
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ48N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 64A TO-220ABN-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The IRFZ48N features very low on-state resistance and has integral zener diodes giving ESD protect...IRFZ48L
Mfg:IR Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ48L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRFZ48, SiHFZ48
Vendor:Other Category:Other
Power MOSFET IRFZ48, SiHFZ48IRFZ46ZSPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 51A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ46ZSPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this ...IRFZ46ZS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ46ZS utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...IRFZ46ZPbF
Mfg:IR Pack:TO-220 D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 51A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ46ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this d...IRFZ46ZL
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ46ZL utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...IRFZ46Z
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ46Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this desi...IRFZ46S
Mfg:26521 Pack: I R Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ46S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ46NSPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 53A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ46NSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching...IRFZ46NS
Vendor:Other Category:Other
The IRFZ46NS is HEXFET power MOSFET.Advanced HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the...IRFZ46NPbF
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 53A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ46NPbF utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRFZ46NLPbF
Mfg:IR Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ46NLPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching...IRFZ46N
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 53A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ46N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...IRFZ46L
Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ46L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ46, SiHFZ46
Vendor:Other Category:Other
Power MOSFET IRFZ46, SiHFZ46IRFZ44ZSPbF
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 51A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44ZSPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this ...IRFZ44ZS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44ZS utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...IRFZ44ZPbF
Mfg:IR Pack:TO-220 D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 51A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this ...IRFZ44ZL
Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44ZL utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...IRFZ44Z
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this desi...IRFZ44VZSPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 57A D2PAKSpecifically designed for Automotive applications this HEXFET® Power MOSFET IRFZ44VZSPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this...IRFZ44VZS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44VZS utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this des...IRFZ44VZPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 57A TO-220ABSpecifically designed for Automotive applications this HEXFET® Power MOSFET IRFZ44VZPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this ...IRFZ44VZLPbF
Vendor:Other Category:Other
Specifically designed for Automotive applications this HEXFET® Power MOSFET IRFZ44VZLPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this...IRFZ44VZL
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44VZL utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this des...IRFZ44VZ
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44VZ utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this desi...IRFZ44VSPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 55A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ44VSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching sp...IRFZ44VS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44VS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ44VPbF
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 55A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ44VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...IRFZ44VL
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44VL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ44V
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 55A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ44V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...IRFZ44S/L
Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ44S/L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRFZ44RPbF
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44RPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRFZ44R, SiHFZ44R
Vendor:Other Category:Other
Power MOSFET IRFZ44R, SiHFZ44RIRFZ44R
Mfg:IR Pack:TO-220 D/C:04+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44R utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ44PbF
Vendor:Other Category:Other
The IRFZ44PbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The IRFZ44PbF has six features...IRFZ44NS
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ44NPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 49A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ44NPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...