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Index I : IRGMC40U,IRGMC40F,IRGB5B120KDPbF,
IRGMC40U
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGMC40U have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGMC40F
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGMC40F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGMC30U
Vendor:Other Category:Other
The IRGMC30U is a kind of insulated gate bipolar transistors (IGBTs) from international rectifier which have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate...IRGMC30F
Vendor:Other Category:Other
The IRGMC30F is a kind of insulated gate bipolar transistors (IGBTs) from international rectifier which have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate...IRGIH50F
Mfg:IR Pack:TO-259AA D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGIH50F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGIB7B60KDPbF
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT ULTRA FAST 600V 12A TO220FPIRGIB7B60KD
Vendor:Other Category:Other
IRGIB6B60KDPbF
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT ULTRA FAST 600V 11A TO220FPIRGIB6B60KD
Mfg:TO-220FullPak Pack:7850 D/C:IR Vendor:Other Category:Other
IRGIB15B60KD1P
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT ULT FAST DIO 600V TO-220FPIRGIB15B60KD1
Mfg:TO-220FullPak Pack:7850 D/C:IR Vendor:Other Category:Other
IRGIB10B60KD1PbF
Vendor:Other Category:Other
IRGIB10B60KD1P
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 16A TO220FPIRGIB10B60KD1
Mfg:IR Pack:TO-220 D/C:09+ Vendor:Other Category:Other
IRGI4085PbF
Vendor:Other Category:Other
This IGBT IRGI4085PbF is specifically designed for applications in Plasma Display Panels. The IRGI4085PbF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSE TM rating per silicon area which im...IRGI4065PbF
Vendor:Other Category:Other
This IGBT IRGI4065PbF is specifically designed for applications in Plasma Display Panels. The IRGI4065PbF utilizes advanced trench IGBT gy to achieve low VCE(on) and low EPULSE TM rating per silicon area which improve...IRGI4064DPBF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT 1200V 10A TO-247 COPAKIRGI4062DPBF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT ISOLATED TO-220ABIRGI4061DPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT 600V 20A W/DIODE TO-220FPIRGI4060DPBF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT 600V 14A W/DIODE TO-220ABIRGI4055PbF
Vendor:Other Category:Other
This IGBT IRGI4055PbF is specifically designed for applications in Plasma Display Panels. The IRGI4055PbF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSE TM rating per silicon area which im...IRGCH70KE
Vendor:Other Category:Other
IRGCH70KE is a kind of IGBT die in wafer form. What comes next is about the electrical characteristics (wafer form) of IRGBF30F. The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 3.3 V at IC=20 A, TJ=25,...IRGCH50ME
Vendor:Other Category:Other
IRGCH50ME is a kind of IGBT die in wafer form. What comes next is about the electrical characteristics of IRGCH50ME(wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 3.6 V at IC=20 A, TJ=25...IRGCH50FE
Vendor:Other Category:Other
IRGCH50FE is a kind of IGBT die in wafer form. What comes next is about the electrical characteristics of IRGCH50FE (wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 3.5 V at IC=20 A, TJ=25...IRGCH40KE
Vendor:Other Category:Other
IRGCH40KE is a kind of IGBT die in wafer form. What comes next is about the electrical characteristics of IRGCH40KE (wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 3.8 V at IC=10 A, TJ=25...IRGCH20SE
Vendor:Other Category:Other
IRGCH20SE is a kind of IGBT die in wafer form. What comes next is about the electrical characteristics of IRGCH20SE(wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 3.3 V at IC=20 A, TJ=25,...IRGCC50ME
Vendor:Other Category:Other
IRGCC50ME is a kind of IGBT die in wafer form. What comes next is about the electrical characteristics of IRGCC50ME (wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 2.5 V at IC=20 A, TJ=25...IRGCC50FE
Vendor:Other Category:Other
IRGCC50FE is a kind of IGBT die in wafer form. What comes next is about the electrical characteristics of IRGCC50FE (wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 2.0 V at IC=20 A, TJ=25...IRGCC40UE
Vendor:Other Category:Other
IRGCC40UE is a kind of IGBT die in wafer form. What comes next is about the electrical characteristics of IRGCC40UE(wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 3.3 V at IC=20 A, TJ=25,...IRGCC40KE
Vendor:Other Category:Other
The IRGCC40KE has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.1V Max.,the test conditions is IC=20A,TJ=2...IRGCC40FE
Vendor:Other Category:Other
The IRGCC40FE has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.1V Max.,the test conditions is IC=20A,TJ=2...IRGCC30UE
Vendor:Other Category:Other
The IRGCC30UE has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 3.3V Max.,the test conditions is IC=12A,TJ=2...IRGCC30FE
Vendor:Other Category:Other
The IRGCC30FE has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 2.7V Max.,the test conditions is IC=17A,TJ=2...IRGCC20UE
Vendor:Other Category:Other
The IRGCC20UE has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 3.1V Max.,the test conditions is IC=6.5A,TJ=...IRGC8B120UB
Vendor:Other Category:Other
IRGC8B120KB
Vendor:Other Category:Other
IRGC75B120UB
Vendor:Other Category:Other
The IRGC75B120UB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 1.54V min,1.78V max,the test conditions i...IRGC75B120KB
Vendor:Other Category:Other
The IRGC75B120KB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 1.18V min,1.35V max,the test conditions i...IRGC5B60KB
Vendor:Other Category:Other
IRGC5B120UB
Vendor:Other Category:Other
IRGC5B120KB
Vendor:Other Category:Other
IRGC50B60KB
Vendor:Other Category:Other
IRGC50B120UB
Vendor:Other Category:Other
The IRGC50B120UB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 1.78V min,2.08V max,the test conditions i...IRGC50B120KB
Vendor:Other Category:Other
The IRGC50B120KB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 1.3V min,1.53V max,the test conditions is...IRGC49B120UB
Vendor:Other Category:Other
IRGC49B120KB
Mfg:IR D/C:710 Vendor:Other Category:Other
IRGC30B60KB
Vendor:Other Category:Other
IRGC25B120UB
Vendor:Other Category:Other
The IRGC25B120UB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 2.3V min,2.7V max,the test conditions is ...IRGC25B120KB
Vendor:Other Category:Other
The IRGC25B120KB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 1.54V min,1.95V max,the test conditions i...IRGC20B60KB
Vendor:Other Category:Other
IRGC15B60KB
Vendor:Other Category:Other
IRGC15B120UB
Vendor:Other Category:Other
IRGC15B120KB
Vendor:Other Category:Other
IRGC14C40LD
Vendor:Other Category:Other
The advanced IGBT process family IRGC14C40LD includes a MOS gated,N-channel logic level device which is intended for coil-on-plugautomotive ignition applications and small-engine ignition circuits. IRGC14C40LD Unique f...IRGC14C40LC
Vendor:Other Category:Other
The advanced IGBT process family IRGC14C40LC includes a MOS gated,N-channel logic level device which is intended for coil-on-plugautomotive ignition applications and small-engine ignition circuits. IRGC14C40LC Unique fea...IRGC14C40LB
Vendor:Other Category:Other
The advanced IGBT process family IRGC14C40LB includes a MOS gated,N-channel logic level device which is intended for coil-on-plugautomotive ignition applications and small-engine ignition circuits. Unique IRGC14C40LB fea...IRGC10B60KB
Vendor:Other Category:Other
IRGC100B120UB
Vendor:Other Category:Other
IRGC100B120KB
Vendor:Other Category:Other
IRGBF30F
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) IRGBF30F from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBF20F
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBF20F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC40U
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC40U have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC40S
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC40S have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC40M-S
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC40M-S have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements o...IRGBC40M
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC40M have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC40K-S
Mfg:IR Pack:TO-263 D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC40K-S have higher usable current densities than comparable bipolar transistors,while at the same time having simpler gate-drive requirements of...IRGBC40K
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC40K have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC40F
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC40F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC30UD2
Mfg:IR Pack:DIP/SOP D/C:30 Vendor:Other Category:Other
Co-packaged IGBTs IRGBC30UD2 are a natural extension of International Rectifier's well known IGBT line. The IRGBC30UD2 provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in subs...IRGBC30U
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30U have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC30S
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30S have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC30M-S
Mfg:IR Pack:TO Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30M-S have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements o...IRGBC30MD2-S
Mfg:IR Pack:TO-263 D/C:05+ Vendor:Other Category:Other
Co-packaged IGBTs IRGBC30MD2-S are a natural extension of International Rectifier's well known IGBT line. The IRGBC30MD2-S provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in ...IRGBC30MD2
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Co-packaged IGBTs IRGBC30MD2 are a natural extension of International Rectifier's well known IGBT line. The IRGBC30MD2 provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in su...IRGBC30M
Mfg:110 Pack:IR D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the famil...IRGBC30K-S
Mfg:IR Pack:TO-263 D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the famil...IRGBC30KD2-S
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Co-packaged IGBTs IRGBC30KD2-S are a natural extension of International Rectifier's well known IGBT line. The IRGBC30KD2-S provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in ...IRGBC30KD2
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. The IRGBC30KD2 provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial ben...IRGBC30K
Mfg:IR Pack:N/A D/C:45 Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30K have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC30FD2
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. The IRGBC30FD2 provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial ben...IRGBC30F
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC30F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC20UD2
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Co-packaged IGBTs IRGBC20UD2 are a natural extension of International Rectifier's well known IGBT line. The IRGBC20UD2 provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in subs...IRGBC20U
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC20U have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of...IRGBC20S
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC20S have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC20M-S
Mfg:IR Pack:TO-263 D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC20M-S have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements o...IRGBC20MD2-S
Mfg:IR Pack:TO-263 D/C:05+ Vendor:Other Category:Other
Co-packaged IGBTs IRGBC20MD2-S are a natural extension of International Rectifier's well known IGBT line. The IRGBC20MD2-S provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in ...IRGBC20MD2
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Co-packaged IGBTs IRGBC20MD2 are a natural extension of International Rectifier's well known IGBT line. The IRGBC20MD2 provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in subs...IRGBC20M
Mfg:IR Pack:TO-220 D/C:100 Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC20M have higher usable current densities than comparable bipolar transistors, while a the same time having simpler gate-drive requirements of t...IRGBC20K-S
Mfg:IR Pack:TO-263 D/C:05+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) IRGBC20K-S from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements o...IRGBC20KD2-S
Mfg:IR Pack:TO-263 D/C:05+ Vendor:Other Category:Other
Co-packaged IGBTs IRGBC20KD2-S are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial b...IRGBC20KD2
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Co-packaged IGBTs IRGBC20KD2 are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial ben...IRGBC20K
Mfg:IR Pack:N/A D/C:60 Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs) IRGBC20K from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGBC20F
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Insulated Gate Bipolar Transistors (IGBTs)IRGBC20F from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of ...IRGB8B60KPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT ULTRA FAST 600V 28A TO220ABIRGB8B60K
Mfg:IR Pack:TO-220 D/C:08+ Vendor:Other Category:Other
IRGB6B60KPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT ULTRA FAST 600V 13A TO220ABIRGB6B60KDPbF
Mfg:IR D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 13A TO220ABIRGB6B60KD
Vendor:Other Category:Other
IRGB6B60K
Mfg:IR Pack:TO-220 D/C:08+ Vendor:Other Category:Other
IRGB5B120KDPbF
Mfg:IR Pack:2007+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 1200V 12A TO220AB