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RF1S9630SM,RF1S9540SM,RF1172B,
RF1S9630SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9630SM vare advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch...RF1S9540SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche...RF1S9530SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9530SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche...RF1S70N06SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S70N06SM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performanc...RF1S70N06
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of...RF1S70N03SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S70N03SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1S70N03
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization ...RF1S640SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. RF1S640SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche ...RF1S640
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-262 D/C:08+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. RF1S640 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mo...RF1S630SM
D/C:07+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors.RF1S630SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche m...RF1S60P03SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These P-Channel power MOSFETs are manufactured using the MegaFET process. RF1S60P03SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1S60P03
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum util...RF1S540SM
Vendor:Other Category:Other
RF1S50N06SM
Mfg:FAIRCHILD D/C:144 Vendor:Other Category:Other
These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S4N100SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1S4N100SM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. RF1S4N100SM are designed for use in applications such as switching regulators, switching converters, motor drivers, ...RF1S45N06SM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. RF1S45N06SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch...RF1S45N06LESM
Mfg:HAR D/C:9627 Vendor:Other Category:Other
These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. RF1S45N06LESM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of s...RF1S45N06
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utiliza...RF1S45N03LSM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process.RF1S45N03LSM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performanc...RF1S45N03L
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S45N03L, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance...RF1S45N02LSM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S45N02LSM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic...RF1S45N02L
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic...RF1S42N03LSM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S42N03LSM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performan...RF1S40N10SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S40N10SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1S40N10LESM
Mfg:FAIRCHIL Pack:TO-263 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. RF1S40N10LESM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utiliz...RF1S40N10
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-262 D/C:08+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S40N10, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding pe...RF1S30P06SM
Mfg:INTERSIL Pack:07+ D/C:TO-263 Vendor:Other Category:Other
These are P-Channel power MOSFETs manufactured using the MegaFET process. RF1S30P06SM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performanc...RF1S30P05SM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
These are P-Channel power MOSFETs manufactured using the MegaFET process. RF1S30P05SM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performanc...RF1S30N06LESM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S30N06LESM, which uses featuresizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding...RF1S30N06LE
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S30N06LE, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati...RF1S25N06SM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S25N06SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1S25N06
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S25N06, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding pr...RF1S22N10SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S22N10SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1K49224
Mfg:FAIRCHILD Pack:SOP8 D/C:93+ Vendor:Other Category:Other
The RF1K49224 complementary power MOSFET is manufactured using an advanced MegaFET process. RF1K49224, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resultin...RF1K4922396
Vendor:Other Category:Other
The RF1K4922396 is manufactured using an advanced MegaFET process. The features of RF1K4922396 are: (1)2.5A, 30V; (2)rDS(ON) = 0.150W; (3)Temperature Compensating PSPICE? Model; (4)Thermal Impedance PSPICE Model; (5)Peak...RF1K49223
Mfg:FAIRCHILD Pack:SOP8 D/C:08+ Vendor:Other Category:Other
The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. RF1K49223, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti...RF1K49221
Mfg:FAIRCHILD Pack:SOP8 D/C:08+ Vendor:Other Category:Other
The RF1K49221 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process.RF1K49221, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resultin...RF1K49211
Mfg:FAIRCHILD Pack:SOP8 D/C:08+ Vendor:Other Category:Other
The RF1K49211 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. RF1K49211, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resul...RF1K49157
Mfg:FAIRCHILD Pack:SOP8 D/C:08+ Vendor:Other Category:Other
This Single N-Channel power MOSFET RF1K49157 is manufactured using an advanced MegaFET process.RF1K49157, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resul...RF1K49156
Mfg:FAIRCHILD Pack:SOP8 D/C:08+ Vendor:Other Category:Other
This Single N-Channel power MOSFET RF1K49156 is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, r...RF1K49154
Mfg:FAIRCHILD Pack:SOP8 D/C:08+ Vendor:Other Category:Other
This Dual N-Channel power MOSFET RF1K49154 is manufactured using the latest manufacturing process technology. RF1K49154, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of...RF1K49093
Mfg:FAIRCHILD Pack:SOP8 D/C:08+ Vendor:Other Category:Other
This Dual P-Channel power MOSFET RF1K49092 is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, res...RF1K49092
Mfg:FAIRCHILD Pack:SOP8 D/C:08+ Vendor:Other Category:Other
This complementary power MOSFET RF1K49092is manufactured using an advanced MegaFET process. RF1K49092, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resultin...RF1K49090
Mfg:HARRIS Pack:SMD Vendor:Other Category:Other
This Dual N-Channel power MOSFET RF1K49090 is manufactured using an advanced MegaFET process. RF1K49090, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, result...RF1K49088
Mfg:HARRIS Pack:SMD Vendor:Other Category:Other
This Dual N-Channel power MOSFET RF1K49086 is manufactured using an advanced MegaFET process. RF1K49086 , which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resul...RF1K49086
Mfg:FAIRCHILD Pack:SOP8 D/C:08+ Vendor:Other Category:Other
This Dual N-Channel power MOSFET RF1K49086 is manufactured using an advanced MegaFET process. RF1K49086, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, result...RF1601T2D
Mfg:ROOM Pack:ITO-220AB D/C:2007 Vendor:Rohm Semiconductor Category:Discrete Semiconductor Products
DIODE FAST REC 200V 16A TO220FNRF150
Vendor:Other Category:Other
Willow offers the RF RF150 series to meet general set of requirements NON-INDUCTIVE high frequency, satisfy with an high power and Non-inductive specification at Economic Price.RF1480
Vendor:Other Category:Other
RF1451
Vendor:Other Category:Other
RF1450
Vendor:Other Category:Other
RF1432C
Vendor:Other Category:Other
Ideal Front-End Filter for European Wireless Receivers Low-Loss RF1432C, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF142
Vendor:Other Category:Other
The RF142 Power Amplifier (PA) controller is a highly integrated, monolithic device optimized for use in 900 MHz, 1800 MHz, and 1900 MHz Global System For Mobile communications® (GSM®) and other Time Division Mul...RF1419D
Vendor:Other Category:Other
Medical Band (402-405 MHz) Front-End Filter RF1419D Low-Loss, Coupled-Resonator (Lithium Tantalate) LiTa03 Design Complies with Directive 2002/95/EC (RoHS)10RF1417E
Vendor:Other Category:Other
Ideal Front-End Filter RF1417E for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1415D
Vendor:Other Category:Other
The RF1415D is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 315.0 MHz receivers. Receiver RF1415D designs using this filter include superhet with 10....RF1414D
Vendor:Other Category:Other
Ideal Front-End Filter RF1411D for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1411D
Vendor:Other Category:Other
Ideal Front-End Filter RF1411D for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1408D
Vendor:Other Category:Other
Ideal Front-End Filter RF1408D for Domestic Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1407D
Vendor:Other Category:Other
Ideal Front-End Filter for European Wireless Receivers Low-Loss RF1407D, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1404E
Vendor:Other Category:Other
Ideal Front-End Filter RF1404E for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching RoHS Compliant 10 Complies with Directive 2002/95/EC (RoHS)RF1404C
Vendor:Other Category:Other
Ideal Front-End Filter RF1404C for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)10 The RF1404C is a low-loss, compact,...RF1402D
Vendor:Other Category:Other
Designed for 315.00 MHz Applications Advanced (Lithium Tantalate) LiTa 03 Design RF1402D for Low Insertion Loss Designed for Match to 50W, No External LC Required Hermetically Sealed Surface Mount Package Complies with D...RF1401D
Vendor:Other Category:Other
Designed for 433.92 MHz Applications Advanced (Lithium Tantalate) LiTa03 design RF1401D for Low Insertion Loss Designed for Match to 50W, No External LC Required Hermetically Sealed Surface Mount Package Complies with Di...RF1400D
Mfg:RFM Pack:N/A D/C:N/A Vendor:Other Category:Other
Ideal Front-End Filter RF1400D for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Wide Bandwidth for Multi-Channel Receiver Application Complies with Directive 20...RF1396C
Mfg:RFM Pack:N/A D/C:N/A Vendor:Other Category:Other
Ideal Front-End Filter RF1396C for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1391C
Mfg:RFM Pack:N/A D/C:N/A Vendor:Other Category:Other
Ideal Front-End Filter RF1391C for Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1355
Vendor:Other Category:Other
Ideal for 390.0 MHz Transmitters RF1355 Very Low Series Resistance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case Complies with Directive 2002/95/EC (RoHS)RF1353D
Vendor:Other Category:Other
Designed for 345 MHz Wireless Applications Advanced (Lithium Tantelate) LiTaO3 RF1353D design for low Insertion Loss Designed for match to 50 ohms, no external LC required Hermetically sealed Surface Mount package Compli...RF1353C
Vendor:Other Category:Other
Designed for 345 MHz Wireless Applications Advanced (Lithium Tantelate) LiTaO3 RF1353C design for low Insertion Loss Designed for match to 50 ohms, no external LC required Hermetically sealed Surface Mount package Compli...RF1336E
Vendor:Other Category:Other
Ideal Front-End Filter RF1336E for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1336D
Vendor:Other Category:Other
Ideal Front-End Filter RF1336D for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1336C
Vendor:Other Category:Other
Ideal Front-End Filter RF1336C for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1319E
Vendor:Other Category:Other
Ideal Front-End Filter RF1319E for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1319D
Vendor:Other Category:Other
Ideal Front-End Filter RF1319D for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1301
Mfg:RFM Pack:N/A D/C:N/A Vendor:Other Category:Other
Ideal Front-End Filter RF1301 for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Rugged TO39 Hermetic Package Complies with Directive 2002/95/EC (RoHS)RF1295C
Vendor:Other Category:Other
Ideal Front-End Filter RF1295C for 451.35 MHz Wireless Receivers Low-Loss Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1284
Vendor:Other Category:Other
Ideal Front-End Filter RF1284 for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Rugged TO39 Hermetic Package Complies with Directive 2002/95/EC (RoHS)RF1238
Vendor:Other Category:Other
The RF1238 is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 318.0 MHz receivers. Receiver designs using RF1238 include superhet with 10.7 MHz or 500 k...RF1211D
Vendor:Other Category:Other
Ideal Front-End Filter RF1211D for Domestic Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS) The RF1211D is a low-loss, compact, a...RF1211C
Vendor:Other Category:Other
Ideal Front-End Filter RF1211C for Domestic Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1211B
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The RF1211B is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 315.0 MHz receivers. Receiver RF1211B designs using this filter include superhet with 10....RF1211
Vendor:Other Category:Other
Ideal Front-End Filter RF1211 for USA Automotive Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Rugged TO39 Hermetic Package Complies with Directive 2002/95/EC (RoHS) The...RF1210D
Vendor:Other Category:Other
The RF1210D is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 303.825 MHz receivers. Receiver designs using RF1210D include superhet with 10.7 MHz or 5...RF1210B
Vendor:Other Category:Other
The RF1210B is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 303.825 MHz receivers. Receiver designs using RF1210B include superhet with 10.7 MHz or 5...RF1210
Vendor:Other Category:Other
Ideal Front-End Filter RF1210 for 303.825 MHz Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Rugged TO39 Hermetic Package Complies with Directive 2002/95/EC (RoHS) The RF...RF1200
Vendor:Other Category:Other
The RF1200 is a single-pole double-throw (SPDT) high power switch specially designed to handle GSM power applications. The RF1200 features low insertion loss, low control voltage, high linearity, and very good harmonic c...RF1199
Vendor:Other Category:Other
The RF1199 is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 291.4 MHz receivers.RF1195
Vendor:Other Category:Other
RF1194
Vendor:Other Category:Other
RF1193
Vendor:Other Category:Other
RF1191
Vendor:Other Category:Other
The RF1191 is a lowloss, compact, and economical surfaceacousticwave (SAW) filter designed to provide frontend selectivity in 224.7 MHz receivers. Receiver designs using RF1191 include superhet with 10.7 MHz or 500 kHz I...RF1183
Vendor:Other Category:Other
The RF1183 is a lowloss, compact, and economical surfaceacousticwave (SAW) filter designed to provide frontend selectivity in 310.0 MHz receivers. Receiver designs using RF1183 include superhet with 10.7 MHz or 500 kHz I...RF1181E
Vendor:Other Category:Other
Ideal Front-End Filter RF1181E for 916.5 MHz Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)RF1181D
Vendor:Other Category:Other
The RF1181D is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 916.5 MHz receivers. Receiver designs using RF1181D include superhet with 10.7 MHz IF, di...RF1181B
Vendor:Other Category:Other
The RF1181B is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter RF1181B designed to provide front-end selectivity in 916.5 MHz receivers. Receiver designs using RF1181B include superhet with 10.7 MH...RF1181
Vendor:Other Category:Other
The RF1181 is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 916.5 MHz receivers. Receiver designs using RF1181 include superhet with 10.7 MHz or 500 k...RF1172D
Vendor:Other Category:Other
Ideal Front-End Filter RF1172D for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching Complies with Directive 2002/95/EC (RoHS)10 The RF1172D is a low-loss, compact,...RF1172C
Vendor:Other Category:Other
The RF1172C is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 433.92 MHz receivers. Receiver designs using RF1172C include superhet with 10.7 MHz or 5...RF1172B
Vendor:Other Category:Other
The RF1172B is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 433.92 MHz receivers. Receiver designs using RF1172B include superhet with 10.7 MHz or 50...