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RF2420,RF2418,RF1S9640SM,
RF2420
D/C:07+ Vendor:Other Category:Other
The RF2420 is a multistage monolithic programmable attenuator. RF2420 is built using an advanced Gallium Arsenide process technology and has an attenuation programmability over a 44dB range in 2dB steps. The attenuation ...RF2418
Mfg:RFMD Vendor:Other Category:Other
The RF2418 is a monolithic integrated UHF receiver front-end. The IC contains all of the required components to implement the RF functions of the receiver except for the passive filtering and LO generation. RF2418 contai...RF2416
Mfg:RFMD Vendor:Other Category:Other
The RF2416 is a dual-band low noise amplifier with bypass switch designed for use as a front-end for 950MHz GSM and DCS1800/PCS1900 applications. RF2416 may also be used for dual-band cellular/PCS application. The 900MHz...RF2413
Mfg:RF D/C:97+ Vendor:Other Category:Other
The RF2413 is a monolithic integrated transmitter universal modulation IC capable of generating modulated AM, PM, or compound carriers in the VHF/UHF frequency range. The modulation of RF2413 is performed at VHF, then th...RF2411
Mfg:38 Pack:RFMD Vendor:Other Category:Other
The RF2411 is a monolithic integrated UHF receiver front-end. The IC contains all of the required components to implement the RF functions of the receiver except for the passive filtering and LO generation. RF2411 contai...RF2402
Mfg:RF Pack:9835+ D/C:SOP Vendor:Other Category:Other
The RF2402 is a monolithic integrated universal modulation system capable of generating modulated AM, PM, or compound carriers in the UHF frequency range. The IC contains all of the required components to implement the m...RF2381
Vendor:Other Category:Other
The RF2381 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular or PCS band and for W-CDMA systems. The features of RF2381 include linear gain control, high gain, and high lin-ear...RF2377
Mfg:JAT Pack:SOT-153 D/C:05+ Vendor:Other Category:Other
The RF2377 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular or PCS band and for W-CDMA systems. The features of RF2377 include linear gain control, high gain, and high lin-ear...RF2376
Vendor:Other Category:Other
The RF2376 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular band. The features of RF2376 include linear gain control, high gain, and low noise figure. The RF2376 is manufactur...RF2373
Mfg:RFMD D/C:IC3VLOW-NOISEAMPRF2373SOT5 Vendor:Other Category:Other
The RF2373 is a low noise amplifier with a very high dynamic range designed for WLAN and digital cellular applications.RF2373 functions as an outstanding front end low noise amplifier or driver amplifier in the transmit ...RF2371
Vendor:Other Category:Other
The RF2371 is a general purpose, low-cost, high performance low noise amplifier designed for operation from a 2.7V to 4V supply with low current consumption. The attenuation of the device is controlled when in power down...RF2370
Vendor:Other Category:Other
The RF2370 is a switchable low noise amplifier with a very high dynamic range designed for digital cellular and WLAN applications. The device functions as an outstanding front end low noise amplifier. The bias current ma...RF2369
Mfg:RFMD Pack:SOT-6 D/C:01+ Vendor:Other Category:Other
The RF2369 is a switchable low noise amplifier with a very high dynamic range designed for digital cellular applications. RF2369functions as an outstanding front end low noise amplifier. When used as an LNA, the bias cur...RF2368
Mfg:RFMD Vendor:Other Category:Other
The RF2368 is a DCS/PCS low noise amplifier with bypass switch designed for use as a front-end for DCS1800/PCS1900 applications. The LNA is a two-stage amplifier with bypass switch. RF2368 has low noise figure and high l...RF2367
Mfg:RF Microdevice D/C:06+ Vendor:Other Category:Other
The RF2367 is a low noise CDMA/TDMA/GSM PA driver amplifier with a very high dynamic range designed for transmit digital PCS applications with frequency ranges between 1700MHz and 2000MHz.RF2367 functions as an outstandi...RF2366
Mfg:RFMD D/C:02+ Vendor:Other Category:Other
The RF2366 is a switchable low noise amplifier with a very high dynamic range designed for digital cellular applications. RF2366 functions as an outstanding front end low noise amplifier. When used as an LNA, the bias cu...RF2365
Mfg:RFMD D/C:00+ Vendor:Other Category:Other
The RF2365 is a low noise amplifier with a high dynamic range designed for the receive front end of digital cellular applications at PCS/DCS frequencies.RF2365 is designed to amplify low level signals with minimum noise ...RF2364
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The RF2364 is a low noise amplifier with a high dynamic range designed for CDMA and TDMA PCS, as well as W-CDMA/CDMA2000 applications. RF2364 functions as an outstanding front end low noise amplifier and the bias current...RF2363
Mfg:RFMD Pack:TO-23 Vendor:Other Category:Other
The RF2363 is a dual-band Low Noise Amplifier designed for use as a front-end for 950MHz GSM/ 1850MHz DCS applications and may be used for dualband cellular/PCS applications. The 900MHz LNA is a single-stage amplifier; t...RF2362
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
The RF2362 is a low noise CDMA/TDMA PA driver ampli-fier with a very high dynamic range designed for transmit digital PCS applications at 1880MHz. RF2362 func-tions as an outstanding PA driver amplifier in the transmit c...RF2361
Mfg:MIC Pack:SOT23-5 Vendor:Other Category:Other
The RF2361 is a low noise amplifier with a very high dynamic range designed for digital cellular applications. RF2361 functions as an outstanding front end low noise amplifier or power amplifier driver amplifier in the t...RF2360
Vendor:Other Category:Other
The RF2360 is a general purpose, low-cost, high-linearity RF amplifier IC. RF2360 is manufactured on a Gallium Arsenide process and is featured in an SOP-16 batwing package. RF2360 has been designed for use as an easily ...RF2352
Vendor:Other Category:Other
The RF2352 is a low noise driver amplifier for 900MHz CDMA/AMPS applications.RF2347 is designed for operation from 2.7V to 3.6V, and features selectable high and low gain modes. In high gain mode, RF2347 will provide abo...RF2347
Mfg:PHI Vendor:Other Category:Other
The RF2347 is a low noise amplifier with a very high dynamic range designed for digital cellular applications at 900MHz. RF2347 functions as an outstanding front end low noise amplifier or power amplifier driver amplifie...RF2338
Vendor:Other Category:Other
The RF2338 is a general purpose, low-cost RF amplifier IC. RF2338 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50&...RF2337
Mfg:RF D/C:00+ Vendor:Other Category:Other
The RF2337 is a general purpose, low-cost RF amplifier IC. RF2337 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50&...RF2336
Vendor:Other Category:Other
The RF2336 is a general purpose, low-cost RF amplifier IC. RF2336 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50&...RF2335
Vendor:Other Category:Other
The RF2335 is a general purpose, low-cost RF amplifier IC. RF2335 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50&...RF2334
Vendor:Other Category:Other
The RF2334 is a general purpose, low-cost RF amplifier IC. RF2334 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50&...RF2333
Vendor:Other Category:Other
The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable...RF2326
Mfg:PHI D/C:3 Vendor:Other Category:Other
The RF2326 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The Darlington circuit configuration with resistive feedback allows for broadband cascadable amplification. RF2326 is u...RF2325
Mfg:RF D/C:99+ Vendor:Other Category:Other
The RF2325 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The Darlington circuit configuration with resistive feedback allows for broadband cascadable amplification. RF2325 is u...RF2324
Pack:SSOP D/C:00+ Vendor:Other Category:Other
The RF2324 is a low noise CDMA/TDMA PA driver ampli-fier with a very high dynamic range designed for transmit digital PCS applications at 1880MHz. RF2324 func-tions as anoutstanding PA driver amplifier in the transmit ch...RF2323
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
The RF2323 is a general purpose, low-cost silicon ampli-fier designed for operation from a 3V supply. The circuit RF2323 configuration with resistive feedback allows for broad-band cascadable amplification. Capacitive co...RF2322
Vendor:Other Category:Other
The RF2322 is a general purpose, low-cost silicon ampli-fier designed for operation from a 3V supply. The circuit RF2322 configuration with resistive feedback allows for broad-band cascadable amplification. Capacitive co...RF2321
Vendor:Other Category:Other
The RF2321 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The circuit RF2321 configuration with resistive feedback allows for broadband cascadable amplification. Capacitive comp...RF2320
Vendor:Other Category:Other
The RF2320 is a general purpose, low-cost, high-linearity RF amplifier IC. RF2320 is manufactured on a Gallium Arsenide process and is featured in an SOP-16 batwing package. RF2320 has been designed for use as an easily ...RF2318
Mfg:RFMD Pack:02+ D/C:SOP-8 Vendor:Other Category:Other
The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. RF2318 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as...RF2317
Vendor:Other Category:Other
The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. RF2317 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily...RF2314
Mfg:RFMD Pack:SOT-23-5 D/C:00+ Vendor:Other Category:Other
The RF2314 is a general purpose, low-cost, high performance amplifier designed for operation from a 2.7V to 6V supply with low current consumption. The circuit RF2314 configuration with resistive feedback allows for broa...RF2312
Vendor:Other Category:Other
The RF2312 is a general purpose, low cost high linearity RF amplifier IC. RF2312 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily...RF2311
Mfg:RF Pack:SOP-8 D/C:SOP-8 Vendor:Other Category:Other
The RF2311 is a general purpose, low cost low power RF amplifier IC. RF2311 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily casc...RF2310
Mfg:IR D/C:97+bulk Vendor:Other Category:Other
The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. RF2310 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran-sistor (HBT) process, and has been designed for use as an easi...RF2308
Mfg:PHILIPS Pack:MODULE D/C:50 Vendor:Other Category:Other
The RF2308 is a general purpose, low cost RF amplifier IC. RF2308 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50&...RF2307
Vendor:Other Category:Other
The RF2307 is a general purpose, low cost RF amplifier IC. RF2307 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50&...RF2306
Vendor:Other Category:Other
The RF2306 is a general purpose, low cost RF amplifier IC. RF2306 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50&...RF2304
Mfg:RF Pack:SOP-8 D/C:09+ Vendor:Other Category:Other
The RF2304 is a low-noise small-signal amplifier.RF2304 is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less t...RF2302
Mfg:RF Pack:MSOP D/C:2005+ Vendor:Other Category:Other
The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. RF2302 is suitable for use in C...RF2301
Mfg:RFMD Pack:SMD Vendor:Other Category:Other
The RF2301 is a high reverse isolation buffer amplifier. RF2301 is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems o...RF2196
Mfg:RFMD Pack:BGA Vendor:Other Category:Other
The RF2196 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2196 is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier in 3V...RF2192
Mfg:RFMD D/C:02+ Vendor:Other Category:Other
The RF2192 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2192 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed...RF2189
Mfg:RFMD Pack:QFN D/C:0233+ Vendor:Other Category:Other
The RF2189 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. RF2189 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, ...RF2186
Mfg:RFMD Vendor:Other Category:Other
The RF2186 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2186 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed...RF2175
Mfg:RFMD Pack:SSOP16 Vendor:Other Category:Other
The RF2175 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2175 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed...RF2174
Vendor:Other Category:Other
The RF2174 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. RF2174 is manufactured on an advanced GaAs HBT process, and has been designed for use as the final...RF2173
Vendor:Other Category:Other
The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications.RF2173 is manufactured on an advanced GaAs HBT process, and RF2173 has been designed for use as the...RF2172
Mfg:RFMD Pack:QFN16 D/C:02+ Vendor:Other Category:Other
The RF2172 is a medium-power high efficiency amplifierIC targeting 3.6V handheld systems.RF2172 is manufacturedon an advanced Gallium Arsenide Heterojunctionipolar Transistor (HBT) process, and has beendesigned for use a...RF2163
Mfg:N/A Pack:N/A D/C:N/A Vendor:Other Category:Other
The RF2163 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. RF2163 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, ...RF2162
Vendor:Other Category:Other
The RF2162 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2162 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed...RF2161
Vendor:Other Category:Other
The RF2161 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2161 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed...RF2157
Pack:NEW PART D/C:99 Vendor:Other Category:Other
The RF2157 is a high-power, high-efficiency linear amplifierIC targeting 3V handheld systems. RF2157 ismanufactured on an advanced Gallium Arsenide HeterojunctionBipolar Transistor (HBT) process, and RF2157 has beendesig...RF2155
Mfg:RFMD Pack:SOP D/C:0449+ Vendor:Other Category:Other
The RF2155 is a 3V medium power programmable gain amplifier IC. RF2155 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplif...RF2153
Mfg:RFDM Pack:CLCC Vendor:Other Category:Other
The RF2153 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2153 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and RF2153 has been d...RF2152
Mfg:RFMD Pack:SSOP16 D/C:99+ Vendor:Other Category:Other
The RF2152 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2152 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and RF2152 has been d...RF2146
Mfg:RFMD Vendor:Other Category:Other
The RF2146 is a high-power, high-efficiency linear amplifier IC. RF2146 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and RF2146 has been designed for use as the final R...RF2140
Mfg:RFMD Pack:BGA D/C:2001 Vendor:Other Category:Other
The RF2140 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. RF2140 is manufactured on an advanced GaAs HBT process, and RF2140 has been designed for use as th...RF2138
Mfg:N/A Pack:QFN D/C:02+ Vendor:Other Category:Other
The RF2138 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. RF2138 is manufactured on an advanced GaAs HBT process, and has been designed for use as the final...RF2137
Mfg:RF Pack:sop-8 D/C:20058 Vendor:Other Category:Other
The RF2137 is a high power, high efficiency linear amplifier IC. RF2137 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ampli...RF2131
Vendor:Other Category:Other
The RF2131 is a high-power, high-efficiency amplifier IC.RF2131 is manufactured on an advanced Gallium Ars-enide Heterojunction Bipolar Transistor (HBT) process,and RF2131 has been designed for use as the final RF amplif...RF2129TR7M1A
Vendor:Other Category:Other
The RF2129TR7M1A belongs to the RF2129 series. RF2129TR7M1A is a kind of linear, medium power, high efficiency amplifier IC. It is designed for low voltage operation. It is used as the final RF amplifier in 2.5GHz spread...RF2129
Pack:SOP Vendor:Other Category:Other
The RF2129 is a linear, medium power, high efficiencyamplifier IC designed specifically for low voltage opera-tion. RF2129 is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) pro-cess, ...RF2128P
Mfg:SOP Vendor:Other Category:Other
The RF2128P is a medium-power, high-efficiency, linearamplifier IC. RF2128P is manufactured on an advancedGallium Arsenide Heterojunction Bipolar Transistor (HBT)process, and has been designed for use as the final RFampl...RF2128
D/C:07+ Vendor:Other Category:Other
The RF2128 is a medium-power, high-efficiency, linearamplifierIC.ThedeviceismanufacturedonanadvancedGallium Arsenide Heterojunction Bipolar Transistor (HBT)process, and RF2128 has been designed for use as the final RFamp...RF2127
Mfg:RFMD D/C:04+ Vendor:Other Category:Other
The RF2127 is a medium-power, high-efficiency, linearamplifierIC.ThedeviceismanufacturedonanadvancedGallium Arsenide Heterojunction Bipolar Transistor (HBT)process, and RF2127 has been designed for use as the final RFamp...RF2126
Vendor:Other Category:Other
The RF2126 is a high-power, high-efficiency, linear ampli-fier IC. RF2126 is manufactured on an advanced Gal-lium Arsenide Heterojunction Bipolar Transistor (HBT)process and has been designed for use as the final RF ampl...RF2125P
Vendor:Other Category:Other
The RF2125P is a high power, high efficiency linear amplifierIC. RF2125P ismanufacturedonanadvanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier...RF212
Vendor:Other Category:Other
The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device o...RF2119
Mfg:IR Pack:N/A D/C:09+ Vendor:Other Category:Other
The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. RF2119 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed ...RF2117
Mfg:RFMD Pack:SOP-16 D/C:0426+ Vendor:Other Category:Other
The RF2117 is a high power amplifier IC. RF2117 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular ...RF2115L
Vendor:Other Category:Other
The RF2115L is a high power amplifier IC. RF2115L ismanufactured on an advanced Gallium Arsenide HeterojunctionBipolar Transistor (HBT) process, and has beendesigned for use as the final RF amplifier in analog cellularph...RF2114
Mfg:RFMD Vendor:Other Category:Other
The RF2114 is a medium to high power linear amplifierIC. RF2114 is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) process,and has been designed for use as the final linearRF amplifier...RF2113
Vendor:Other Category:Other
The RF2113 is a kind of medium to high power linear amplifier IC. RF2113 is fabricated with an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the dual linear R...RF210A
Vendor:Other Category:Other
The RF210A and RF210B devices are available as a dual-band front end for Global System for Mobile Communications (GSM) handset applications. Both of these highly integrated, monolithic devices RF210A are optimized for du...RF2108
Mfg:250 Pack:RFMD Vendor:Other Category:Other
The RF2108 is a high power, high efficiency linear amplifier IC. RF2108 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ampli...RF2105L
Mfg:RF Pack:LCC D/C:20058 Vendor:Other Category:Other
The RF2105L is a high power, high efficiency linear amplifier IC. RF2105L is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amp...RF2104
Mfg:35 Pack:RFMD Vendor:Other Category:Other
The RF2104 is a medium power amplifier IC. RF2104 manufactured on a low cost Silicon process, and hasbeen designed for use as the final RF amplifier in UHFradio transmitters operating between 400MHz and1000MHz. It may al...RF2103P
Mfg:RFMD Pack:SOP Vendor:Other Category:Other
The RF2103P is a medium power linear amplifier IC. RF2103P is manufactured on an advanced Gallium ArsenideHeterojunction Bipolar Transistor (HBT) process, and haseen designed for use as the final linear RF amplifier inUH...RF2103
Vendor:Other Category:Other
The RF2103 is a kind of power linear amplifier IC. RF2103 is fabricated with an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and RF2103 has been designed for use as the dual linear RF amplif...RF2048
Vendor:Other Category:Other
The RF2048 is a general purpose, low cost RF amplifier IC. RF2048 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 ...RF2047
Vendor:Other Category:Other
The RF2047 is a general purpose, low cost RF amplifier IC. RF2047 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 ...RF2046
Vendor:Other Category:Other
The RF2046 is a general purpose, low cost RF amplifier IC. RF2046 is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as an easily-cascadable 50 g...RF2045
Mfg:RFMD D/C:N/A Vendor:Other Category:Other
The RF2045 is a general purpose, low cost RF amplifier IC. RF2045 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 ...RF2044
Mfg:RFMD D/C:N/A Vendor:Other Category:Other
The RF2044 is a general purpose, low-cost RF amplifier IC. RF2044 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 ...RF2043
Vendor:Other Category:Other
The RF2043 is a general purpose, low cost RF amplifier IC. RF2043 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 ...RF201L2S
Mfg:ROHM D/C:08+ Vendor:Other Category:Other
RF2001T4S
Mfg:ROOM Pack:ITO-220AB D/C:2007 Vendor:Other Category:Other
RF2001T3D
Mfg:ROHM Pack:SOP D/C:07+ Vendor:Rohm Semiconductor Category:Discrete Semiconductor Products
DIODE FAST REC 300V 20A TO220FNRF200
Vendor:Other Category:Other
Willow offers the RF RF200 series to meet general set of requirements NON-INDUCTIVE high frequency, satisfy with an high power and Non-inductive specification at Economic Price.RF1VU7
Vendor:Other Category:Other
The RF1VU7 is a kind of integrated television demodulator assembly designed for use with VTSS-series tuners. RF1VU7 replaces the earlier RIFU0508GEZZ and provides the same functionality in all respects. The input is a st...RF1S9640SM
D/C:07+ Vendor:Other Category:Other
These are P-Channel enhancement mode silicon-gate power field-effect transistors. RF1S9640SM are advanced power MOSFETs designed, tested, and guaranteed to withstand specified level of energy in the breakdown avalanche m...