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Index G : GB50YF120N,GB50XF60K,GA150TD120U,

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  • GB50YF120N

    Vendor:Other    Category:Other    
    The GB50YF120N is designed as one kind of IGBT fourpack modules with current of 50A. GB50YF120N's benefits include benchmark efficiency for SMPS appreciation in particular HF welding, rugged transient performance, low EM...

  • GB50XF60K

    Vendor:Other    Category:Other    
    The GB50XF60K is designed as one kind of IGBT sixpack modules with current of 48A. GB50XF60K's benefits include benchmark efficiency for motor control, rugged transient performance, low EMI, requires less snubbing, direc...

  • GB50XF120K

    Vendor:Other    Category:Other    
    The GB50XF120K is designed as one kind of IGBT sixpack modules.GB50XF120K has eight features. (1)Low Vce(on) non punch through IGBT technology. (2)Low diode VF. (3)10us short circuit capability. (4)Square RBSOA. (5)HEXFR...

  • GB50RF60K

    Vendor:Other    Category:Other    
    The GB50RF60K is designed as one kind of IGBT PIM modules with current of 48A. GB50RF60K's benefits include benchmark efficiency for motor control, rugged transient performance, low EMI, requires less snubbing, direct mo...

  • GB50NA120UX

    Vendor:Other    Category:Other    
    The GB50NA120UX is designed as one kind of "high side chopper" IGBT SOT-227 (ultrafast IGBT) with current of 50A. GB50NA120UX is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induct...

  • GB50LA120UX

    Vendor:Other    Category:Other    
    The GB50LA120UX is designed as one kind of "low side choppers" IGBT SOT-227 (ultrafast IGBT) with current of 50A. GB50LA120UX is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induct...

  • GB4600

    Mfg:GENNUM    Pack:GENNUM    Vendor:Other    Category:Other    
    The GB4600 is a high performance, monolithic unity gain video buffer made on Gennum's proprietary LSI process. The device features a stable wideband topology capable of driving high capacitance video busses.Optimal syste...

  • GB4571

    Vendor:Other    Category:Other    
    The GB4571 is a high performance video buffer with DC restore used primarily for accurate back porch clamping. Key features of GB4571 include operation from ±4.5 V to ±13.2 V supply voltages, fast recovery from sudden ch...

  • GB4570

    Vendor:Other    Category:Other    
    The GB4570 is a high performance video buffer/clamp used primarily for sync tip clamping of video signals. Key features of GB4570 include operation from ± 4.5 to ±13.2V supply voltages, ±0.1dB flatness to 80MHz and avail...

  • GB4551

    Mfg:N/A    Pack:N/A    D/C:07+    Vendor:Other    Category:Other    
    The GB4551 is a high performance video buffer with DC restore primarily used for accurate back porch clamping. The circuit features of GB4551 a wideband differential amplifier that can be configured as a gain stage. The ...

  • GB4550A

    Pack:SIP-8P    D/C:01+    Vendor:Other    Category:Other    
    The GB4550 and GB4550A are high performance monolithic video buffer/clamps made on Gennum's LSI process. The feature of GB4550A a wideband differential amplifier that can be configured as a gain stage. The output signal ...

  • GB4550 / GB4550A

    Vendor:Other    Category:Other    
    The GB4550 and GB4550A are high performance mono-lithic video buffer/clamps made on Gennum's LSI process. GB4550 and GB4550A feature a wideband differential amplifier that can be configured as a gain stage. The output si...

  • GB4550

    Vendor:Other    Category:Other    
    The GB4550 and GB4550A are high performance monolithic video buffer/clamps made on Gennum's LSI process. GB4550 and GB4550A feature a wideband differential amplifier that can be configured as a gain stage. The output sig...

  • GB35XF120K

    Vendor:Other    Category:Other    
    The GB35XF120K is designed as one kind of IGBT sixpack modules with current of 35A. GB35XF120K's benefits include benchmark efficiency for motor control, rugged transient performance, low EMI, requires less snubbing, dir...

  • GB30XF60K

    Vendor:Other    Category:Other    
    The GB30XF60K is designed as one kind of IGBT sixpack modules with current of 35A. GB30XF60K's benefits include benchmark efficiency for motor control, rugged transient performance, low EMI, requires less snubbing, direc...

  • GB25XF120K

    Mfg:IR    Pack:SOP    Vendor:Other    Category:Other    

  • GB25RF120K

    Mfg:IR    Vendor:Other    Category:Other    

  • GB240128B

    Vendor:Other    Category:Other    
    The GB240128B is a 240 x 128 Dots Graphics LCD module. It has a FSTN panel composed of 240segments and 128 commons. The LCM can be easily accessed by micro-controller via parallel interface.

  • GB20XF60K

    Vendor:Other    Category:Other    
    The GB20XF60K is designed as one kind of IGBT sixpack modules with current of 21A. Its benefits include benchmark efficiency for motor control, rgged transient performance, low EMI, requires less snubbing, direct mountin...

  • GB20RF60K

    Vendor:Other    Category:Other    
    The GB20RF60K is designed as one kind of IGBT PIM modules with current of 21A. GB20RF60K's benefits include benchmark efficiency for motor contro, rugged transient performance, low EMI, requires less snubbing, direct mou...

  • GB200TS60NPbF

    Vendor:Other    Category:Other    
    The GB200TS60NPbF is designed as one kind of INT-A-PAK "half-bridges" (ultrafast speed IGBT) with current of 209A. GB200TS60NPbF's benefits include benchmark efficiency for UPS and welding application, rugged transient p...

  • GB15XP120KTPbF

    Vendor:Other    Category:Other    
    The GB15XP120KTPbF is designed as one kind of three phase inverter modules in MTP package 1200V NPT IGBT and HEXFRED diodes with current of 15A. GB15XP120KTPbF's benefits include optimized for inverter motor drive applic...

  • GB15XF120K

    Vendor:Other    Category:Other    
    The GB15XF120K is designed as one kind of IGBT sixpack modules with current of 18A. GB15XF120K's beneefits include benchmark efficiency for motor control, rugged transient performance, low EMI, requires less snubbing, di...

  • GB15RF60K

    Vendor:Other    Category:Other    
    The GB15RF60K is designed as one kind of IGBT PIM modules with current of 17A. GB15RF60K's benefits include benchmark efficiency for motor control, rugged transient performance, low EMI, requires less snubbing, direct mo...

  • GB150TS60NPbF

    Vendor:Other    Category:Other    
    The GB150TS60NPbF is designed as one kind of INT-A-PAK "half-bridges" (ultrafast speed IGBT) with current of 138A. GB150TS60NPbF's benefits include benchmark efficiency for UPS and welding application, rugged transient p...

  • GB10XF120K

    Vendor:Other    Category:Other    
    The GB10XF120K is designed as one kind of IGBT sixpack modules with current of 13A. GB10XF120K's benefits include benchmark efficiency for motor control, rugged transient performance, low EMI, requires less snubbing and ...

  • GB10RF60K

    Vendor:Other    Category:Other    
    The GB10RF60K is designed asone kind of IGBT PIM modules with current of 12A. GB10RF60K's benefits include benchmark efficiency for motor control, rugged transient performance, low EMI, requires less snubbing, direct mou...

  • GB100TS60NPbF

    Vendor:Other    Category:Other    
    The GB100TS60NPbF is designed as one kind of INT-A-PAK "half-bridges" (ultrafast speed IGBT) with current of 108A. GB100TS60NPbF's benefits include benchmark efficiency for UPS and welding application, rugged transient p...

  • GB100DA60UP

    Vendor:Other    Category:Other    
    The GB100DA60UP si designed as one kind of insulated gate bipolar transistors (warp 2 speed IGBT) with current of 100A. GB100DA60UP is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, ...

  • GB05XP120KTPbF

    Vendor:Other    Category:Other    
    The GB05XP120KTPbF is designed as one kind of three phase inverter modules in MTP package 1200V NPT IGBT and HEXFRED diodes with current of 5A. GB05XP120KTPbF's benefits include optimized for inverter motor drive applica...

  • GAZ series

    Vendor:Other    Category:Other    
    GAZ series are low profile surface mount chip aluminum electrolytic capacitors with + 105°C Low Impedance. GAZ series have six features.The first one is that wide capacitance range of GAZ series is from 0.1 F ...

  • GAU212S-15255

    Vendor:Other    Category:Other    

  • GAU212P-15255

    Vendor:Other    Category:Other    

  • GAU205S-15252

    Vendor:Other    Category:Other    

  • GAU205P-15252

    Vendor:Other    Category:Other    

  • GATE 3S

    Mfg:Vishay    D/C:08+    Vendor:Other    Category:Other    
    Communication link GATE 3S between local network for transferring weight, force or servo data over external networks (field buses) to PCs or PLCs.

  • GAT-0

    Mfg:MINI    Pack:QFN    D/C:07+    Vendor:Other    Category:Other    

  • Gap-Kap

    Vendor:Other    Category:Other    
    Ceramic Disc Capacitors (Straight Leads) Gap-Kap 1kV to 3kV

  • GALW9V647

    Vendor:Other    Category:Other    

  • Gali-74

    Vendor:Other    Category:Other    

  • Gali_59

    Vendor:Other    Category:Other    

  • Gali_49

    Vendor:Other    Category:Other    

  • Gali_39

    Vendor:Other    Category:Other    

  • Gali_29

    Vendor:Other    Category:Other    

  • Gali_19

    Vendor:Other    Category:Other    

  • GAL26CV12

    Pack:DIP    Vendor:Other    Category:Other    
    The GAL26CV12, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance 28-pin PLD available on the ma...

  • GAL26CLV12

    Vendor:Other    Category:Other    
    The GAL26CLV12D, at 5 ns maximum propagation delay time, provides higher performance than its 5V counterpart. The GAL26CLV12D can interface with both 3.3V and 5V signal levels. The GAL26CLV12D is manufactured using Latt...

  • GAL22V10D

    Pack:PLCC    Vendor:Other    Category:Other    
    The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on t...

  • GAL22V10C

    Pack:1000    Vendor:Other    Category:Other    
    The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on t...

  • GAL22V10B

    Mfg:LATTICE    Pack:DIP    Vendor:Other    Category:Other    
    The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on t...

  • GAL22V10

    Mfg:1884    Pack:AMD    Vendor:Other    Category:Other    
    The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on t...

  • GAL20XV10

    Vendor:Other    Category:Other    
    The GAL20XV10 combines a high performance CMOS process with electrically erasable (E2) floating gate technology to provide the highest speed Exclusive-OR PLD available in the market. At 90mA maximum Icc (75mA typical Icc...

  • GAL20VP8

    Vendor:Other    Category:Other    
    The GAL20VP8, with 64 mA drive capability and 15 ns maximum propagation delay time is ideal for Bus and Memory control applications. The GAL20VP8 is manufactured using Lattice Semiconductor's advanced E2CMOS process whic...

  • GAL20V8ZD

    Vendor:Other    Category:Other    
    The GAL20V8Z and GAL20V8ZD, at 100 µA standby current and 12ns propagation delay provides the highest speed and lowest power combination PLD available in the market. The GAL20V8Z/ZD is manufactured using Lattice Se...

  • GAL20V8Z

    Vendor:Other    Category:Other    
    The GAL20V8Z and GAL20V8ZD, at 100 µA standby current and 12ns propagation delay provides the highest speed and lowest power combination PLD available in the market. The GAL20V8Z/ZD is manufactured using Lattice Se...

  • GAL20V8QS-10L

    Vendor:Other    Category:Other    
    The EECMOS GAL20V8QS-10L is fabricated using national's CS80BEV 0.8u electrically erasable CMOS progress.This advanced process makes national's GAL20V8QS extremly fast,allowing controlled output edge rates which dramati...

  • GAL20V8

    Mfg:LATTICE    D/C:08+    Vendor:Other    Category:Other    
    The GAL20V8C, at 5ns maximum propagation delay time, com- bines a high performance CMOS process with Electrically Eras- able (E2 ) floating gate technology to provide the highest speed performance available in the PLD ma...

  • GAL20RA10

    Mfg:N/A    Pack:CDIP    D/C:N/A    Vendor:Other    Category:Other    
    The GAL20RA10 combines a high performance CMOS process with electrically erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. Lattice Semiconductor's E2CMOS circuit...

  • GAL20LV8ZD

    Vendor:Other    Category:Other    
    The GAL20LV8ZD, at 100 µA standby current and 15ns propagation delay provides the highest speed low-voltage PLD available in the market. The GAL20LV8ZD is manufactured using Lattice Semiconductor's advanced 3.3V E...

  • GAL20LV8

    Vendor:Other    Category:Other    
    The GAL20LV8D, at 3.5 ns maximum propagation delay time, provides the highest speed performance available in the PLD market. The GAL20LV8D is manufactured using Lattice Semiconductor's advanced 3.3V E2CMOS process, which...

  • GAL18V10

    Mfg:LATTICE    Pack:00+    D/C:DIP    Vendor:Other    Category:Other    
    The GAL18V10, at 7.5 ns maximum propagation delay time, com- bines a high performance CMOS process with Electrically Eras- able (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows ...

  • GAL16VP8

    Vendor:Other    Category:Other    
    The GAL16VP8, with 64 mA drive capability and 15 ns maximum propagation delay time is ideal for Bus and Memory control applications. The GAL16VP8 is manufactured using Lattice Semiconductor's advanced E2CMOS process whic...

  • GAL16V8ZD

    Vendor:Other    Category:Other    
    The GAL16V8Z and GAL16V8ZD, at 100 µA standby current and 12ns propagation delay provides the highest speed and lowest power combination PLD available in the market. The GAL16V8Z/ ZD is manufactured using Lattice ...

  • GAL16V8Z

    Mfg:LATTICE    Pack:PLCC-20    Vendor:Other    Category:Other    
    The GAL16V8Z and GAL16V8ZD, at 100 µA standby current and 12ns propagation delay provides the highest speed and lowest power combination PLD available in the market. The GAL16V8Z/ ZD is manufactured using Lattice ...

  • GAL16V8QS-10L

    Vendor:Other    Category:Other    
    The EECMOS GAL16V8QS-10L is fabricated using national's CS80BEV 0.8u electrically erasable CMOS progress.This advanced process of GAL16V8QS-10L makes national's GAL16V8QS extremly fast,allowing controlled output edge ra...

  • GAL16V8QS

    Vendor:Other    Category:Other    
    The EECMOS GAL16V8QS devices are fabricated using National's CS80BEV O.8 Electrically Erasable CMOS process.This advanced process makes National's GAL16V8QS extremely fast, allowing controlled output edge rates whic...

  • GAL16V8D-25LPN

    Vendor:Other    Category:Other    
    The GAL16V8D-25LPN belongs to GAL16V8 family, which at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E 2 ) floating gate technology to provide the highest spe...

  • GAL16V8D-25LJN

    Vendor:Other    Category:Other    
    The GAL16V8D-25LJN belongs to GAL16V8 family, which at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E 2 ) floating gate technology to provide the highest spe...

  • GAL16V8D-15LS

    Vendor:Other    Category:Other    
    The GAL16V8D-15LS is designed as high performance E2CMOS PLD with generic array logic. GAL16V8D-15LS combines a high performance CMOS process with electrically erasable (E2) floating gate technology to provide the highes...

  • GAL16V8D-15LPI

    Vendor:Other    Category:Other    
    The GAL16V8D-15LPI belongs to GAL16V8 family, which at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E 2 ) floating gate technology to provide the highest spe...

  • GAL16V8D-15LJNI

    Vendor:Other    Category:Other    
    The GAL16V8D-15LJNI belongs to GAL16V8 family, which at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E 2 ) floating gate technology to provide the highest sp...

  • GAL16V8D-15LJ

    Vendor:Other    Category:Other    
    The GAL16V8D-15LJ belongs to GAL16V8 family, which at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E 2 ) floating gate technology to provide the highest spee...

  • GAL16V8D-10LPN

    Vendor:Other    Category:Other    
    The GAL16V8D-10LPN,at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD...

  • GAL16V883

    Vendor:Other    Category:Other    
    The GAL16V8/883 is a high performance E2 CMOS program- mable logic device processed in full compliance to MIL-STD-883. This military grade GAL16V8/883 combines a high performance CMOS process with Electrically Erasable ...

  • GAL16V8

    Pack:800    Vendor:Other    Category:Other    
    The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance of GAL16V8 available in th...

  • GAL16LV8ZD

    Mfg:LATTICE    Pack:PLCC20    Vendor:Other    Category:Other    
    The GAL16LV8ZD, at 100 µA standby current and 15ns propagation delay provides the highest speed low-voltage PLD available in the market. The GAL16LV8ZD is manufactured using Lattice Semiconductor's advanced 3.3V E2...

  • GAL16LV8C-15LJN

    Vendor:Other    Category:Other    
    The GAL16LV8C-15LJN ,at 3.5 ns maximum propagation delay time,provides the highest speed performance available in the PLD market.The GAL16LV8C-15LJN can interface with both 3.3V and 5V signal levels. Features of the GAL...

  • GAL16LV8

    Vendor:Other    Category:Other    
    The GAL16LV8D, at 3.5 ns maximum propagation delay time, provides the highest speed performance available in the PLD market. The GAL16LV8C can interface with both 3.3V and 5V signal levels. The GAL16LV8 is manufactured u...

  • GA75TS60U

    Mfg:N/A    Pack:NA/    D/C:09+    Vendor:Other    Category:Other    

  • GA75TS120UPbF

    Vendor:Other    Category:Other    
    The GA75TS120UPbF is designed as one kind of "half-bridges" IGBT INT-A-PAK (ultrafast speed IGBT) with current of 75A. GA75TS120UPbF's benefits include increased operating efficiency, direct mounting to heatsink, perform...

  • GA75TS120U

    Mfg:IR    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • GA600HD25S

    Mfg:IR    Pack:Dual INT-A-Pak    D/C:05+    Vendor:Other    Category:Other    

  • GA600GD25S

    Mfg:N/A    Pack:NA/    D/C:09+    Vendor:Other    Category:Other    

  • GA50TS120U

    D/C:N/A    Vendor:Other    Category:Other    

  • GA500TD60U

    Mfg:IR    Pack:Dual INT-A-Pak    D/C:05+    Vendor:Other    Category:Other    

  • GA400TD60U

    Mfg:module    Pack:IR    D/C:05+    Vendor:Other    Category:Other    

  • GA400TD25S

    Mfg:N/A    Pack:NA/    D/C:09+    Vendor:Other    Category:Other    

  • GA300TD60U

    Mfg:module    Pack:IR    D/C:05+    Vendor:Other    Category:Other    

  • GA250TS60U

    Mfg:IR    Pack:MODULE    D/C:06+    Vendor:Other    Category:Other    

  • GA250TD120U

    Mfg:IR    Pack:Dual INT-A-Pak    D/C:05+    Vendor:Other    Category:Other    

  • GA200TS60UPbF

    Vendor:Other    Category:Other    
    The GA200TS60UPbF is designed as one kind of "high-bridge" IGBT INT-A-PAK (ultrafast speed IGBT) with current of 200A. GA200TS60UPbF's benefits include increased operating efficiency, direct mounting to heatsink, perform...

  • GA200TS60U

    Mfg:IR    D/C:2IGBT: 200A600V    Vendor:Other    Category:Other    

  • GA200TD120U

    Mfg:TOSHIBA    Pack:module    D/C:N/A    Vendor:Other    Category:Other    

  • GA200SA60UP

    Vendor:Other    Category:Other    
    The GA200SA60UP is designed as one kind of insulated gate bipolar transistors (ultrafast speed IGBT) with current of 100A. GA200SA60UP is designed for increased operating efficiency in power conversion: UPS, SMPS, weldin...

  • GA200SA60U

    Mfg:IR    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • GA200SA60S

    Mfg:module    Pack:IR    D/C:05+    Vendor:Other    Category:Other    

  • GA200NS61U

    Mfg:N/A    Pack:N/A    D/C:N/A    Vendor:Other    Category:Other    

  • GA200HS60S1PbF

    Vendor:Other    Category:Other    
    The GA200HS60S1PbF is designed as one kind of "half-bridge" IGBT INT-A-PAK (standard speed IGBT) with current of 200A. GA200HS60S1PbF's benefits include increased operating efficiency, direct mounting to heatsink, perfor...

  • GA150TS60U

    Mfg:IR    D/C:2IGBT: 150A600V    Vendor:Other    Category:Other    

  • GA150TD120U

    Mfg:IR    Pack:Dual INT-A-Pak    D/C:05+    Vendor:Other    Category:Other