About SeekIC | Services | Payment | Advertisements service | Contact Us| Justway | Links
© 2008-2012 SeekIC.com Corp.All Rights Reserved.
Suppliers
DataSheet
Response in 12 hours
STB7103,STB7102,STB36NF03L,
STB7103
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers a...STB7102
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers a...STB7101
Mfg:ST Pack:SC70-6 D/C:N/A Vendor:Other Category:Other
The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatne...STB7100
Mfg:ST Pack:D2PAK D/C:07+ Vendor:Other Category:Other
Demonstrating its continued leadership in STB ICs, STMicroelectronics introduces the first fully integrated high-definition set-top box IC with an advanced low-bit rate video decoder.The STB7100 is a single-chip video de...STB70NH03L
Mfg:D2PAK Pack:7850 D/C:ST Vendor:Other Category:Other
The STB70NH03L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output...STB70NFS03L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This product associates a Power MOSFET STB70NFS03L of the third generation of STMicroelect ronics unique "Single Feature Size" strip-based process and a low drop Schottky diode. The t ransistor shows the best t rade-off ...STB70NF3LL
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This application specific Power Mosfet STB70NF3LL is the third generation of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows the best trade-off between on-resistance a...STB70NF03L-1
Mfg:TO220MONOC.. Pack:7850 D/C:ST Vendor:Other Category:Other
This application specific Power MOSFET STB70NF03L-1 is the third genaration of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resis...STB70NF03L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This application specific Power MOSFET STB70NF03L is the third genaration of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resista...STB70NF02L
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This application specific Power Mosfet is the third generation of STB70NF02L STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows the best trade-off between on-resistance a...STB7003
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
The STB7003 is a tri-band LNA designed for GSM/DCS/ PCS applications. The GC pin sets the LNA gain levels.The innovative architecture implemented allows to reach very low current consumption. LNA1 works at 0.9-1.0 GHz an...STB7002
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very lit...STB7001
Vendor:Other Category:Other
The STB7001 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 900-MHz applications. STB7001 is housed in a small industry-standard MSOP8 surface mount package, requiring very littl...STB6NK60Z-1
Mfg:TO220MONOC.. Pack:7850 D/C:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 600V 6A I2PAKThe STB6NK60Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is ta...STB6NK60Z
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
The STB6NK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is take...STB6NC90Z-1
Mfg:ST Pack:TO Vendor:Other Category:Other
The STB6NC90Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arran...STB6NC90Z
Mfg:ST Pack:TO Vendor:Other Category:Other
The STB6NC90Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...STB6NC80Z-1
Mfg:ST Pack:TO-220 D/C:01+ Vendor:Other Category:Other
The STB6NC80Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arran...STB6NC80Z
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
The STB6NC80Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...STB6NC60-1
Mfg:ST Pack:TO Vendor:Other Category:Other
The STB6NC60-1 PowerMESH(TM)II is the evolution of the first generation of MESH OVERLAY(TM). The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing edge ...STB6NB90
Mfg:ST Pack:TO-263 D/C:00+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY process, STB6NB90 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company...STB6NB50
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY] process, STB6NB50 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Compan...STB6NA80
Mfg:ST Pack:TO-262/263 D/C:06+ Vendor:Other Category:Other
STB6NA60
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
STB6LNC60
Mfg:ST Pack:TO Vendor:Other Category:Other
The STB6LNC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading ed...STB65G4
Vendor:Other Category:Other
STB6100
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The STB6100 ASIC is a highly integrated, low-cost direct conversion (zero IF) tuner IC for DVB-S2 broadcast satellite applications. This device includes an LNA, down-converting mixers, baseband low-pass filters, gain con...STB60NH02LT4
Mfg:ST Pack:D2PAK D/C:09+ Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 24V 60A D2PAKThe STB60NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.STB60NH02L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
The STB60NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.STB60NF10
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB60NF10 MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in adv...STB60NF06L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB60NF06L MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced ...STB60NF06
Vendor:Other Category:Other
This STB60NF06 Power Mosfet series realized with STMicroelectronicsunique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advan...STB60NF03L
Mfg:ST Pack:TO-263 D/C:08+ Vendor:Other Category:Other
This STB60NF03L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...STB60NE06L-16
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This Power Mosfet STB60NE06L-16 is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugge...STB60NE06-16
Vendor:Other Category:Other
This Power Mosfet STB60NE06-16 is the latest development of SGS-THOMSON unique " Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged aval...STB60NE03L-12
Mfg:ST Pack:TO-263 D/C:00+ Vendor:Other Category:Other
This Power MOSFET STB60NE03L-12 is the latest development of STMicroelectronics unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, ru...STB60NE03L-10
Mfg:ST Pack:TO-262/263 D/C:06+ Vendor:Other Category:Other
This Power Mosfet STB60NE03L-10 is the latest development of SGS-THOMSON unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalan...STB60N55F3
Mfg:D2PAK Pack:7850 D/C:ST Vendor:STMicroelectronics (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 55V 80A D2PAKThis n-channel enhancement mode Power MOSFET STB60N55F3 is the latest refinement of STMicroelectronics' unique "Single Feature Size™" strip-based process, which has decreased the critical alignment steps, offering ...STB60N06-14
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
STB60N03L-10
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
STB606I
Vendor:Other Category:Other
STB6000
Mfg:N/A Pack:BGA D/C:08+ Vendor:Other Category:Other
The STB6000 ASIC is a highly integrated, low cost direct conversion (zero IF) tuner IC for digital broadcast satellite(DBS) television applications.This device STB6000 includes an LNA, down-converting mixers, baseband lo...STB5NK50Z-1
Mfg:TO220MONOC.. Pack:7850 D/C:ST Vendor:Other Category:Other
The STB5NK50Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is ta...STB5NC90Z-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The third generation of MESH OVERLAY™ Power MOSFETs STB5NC90Z-1 for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arran...STB5NC90Z
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The third generation of MESH OVERLAY™ Power MOSFETs STB5NC90Z for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...STB5NC70Z-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB5NC70Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arran...STB5NC70Z
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
The STB5NC70Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...STB5NC50-1
Mfg:ST Pack:TO-220 D/C:01+ Vendor:Other Category:Other
The STB5NC50-1 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading ed...STB5NC50
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
The STB5NC50 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge...STB5NB80
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY] process, STB5NB80 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Compan...STB5NB60
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY process, STB5NB60 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company...STB5NA80
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
STB5NA50
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
STB5610
Vendor:Other Category:Other
The STB5610, using ST Microelectronics RF Bipolar technology, implements a Global Positioning System RF front-end. The chip provides down conversion from the 1575.42 MHz GPS (L1) signal to 4.092 MHz Output signal. The in...STB5600
Mfg:ST Pack:QFP Vendor:Other Category:Other
The STB5600, using STMicroelectronics HSB2, High Speed Bipolar technology, implements a Global Positioning System RF front-end.The chip STB5600 provides down conversion from the GPS (L1) signal at 1575 MHz via an IF of 2...STB55NF06L-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This Power Mosfet STB55NF06L-1 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance,...STB55NF06L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB55NF06L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...STB55NF06-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This Power MOSFET STB55NF06-1 is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, ru...STB55NF06
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This Power MOSFET STB55NF06 is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugg...STB55NF03L-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This Power MOSFET STB55NF03L-1 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, r...STB55NF03L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This Power MOSFET STB55NF03L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rug...STB55NE06L
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This Power Mosfet STB55NE06L is the latest development of SGS-THOMSON unique "Single Feature SizeÔ" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged a...STB55NE06
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This Power Mosfet STB55NE06 is the latest development of SGS-THOMSON unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance c...STB50NH02L
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB50NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved.STB50NE10L
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This STB50NE10L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeÔ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, ...STB50NE10
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB50NE10 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged a...STB50NE08
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This STB50NE08 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanch...STB4NK60Z-1
Mfg:TO220MONOC.. Pack:7850 D/C:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 600V 4A I2PAKThe STB4NK60Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is ...STB4NK60Z
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
The STB4NK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is ta...STB4NC80Z-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB4NC80Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur-passed on-resistance per unit area while integrat-ing back-to-back Zener diodes between gate and source. Such arr...STB4NC80Z
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB4NC80Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur-passed on-resistance per unit area while integrat-ing back-to-back Zener diodes between gate and source. Such arran...STB4NC60A-1
Mfg:ST Pack:TO202-3 D/C:01+ Vendor:Other Category:Other
The STB4NC60A-1 PowerMESH(TM)II is the evolution of the first generation of MESH OVERLAY(TM). The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing edge...STB4NC60-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB4NC60-1 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re-finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing ...STB4NC60
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
The STB4NC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re-finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing e...STB4NC50
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB4NC50 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re-finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing e...STB4NB80FP
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ process, STB4NB80FP SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Comp...STB4NB80
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ process, STB4NB80 SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Compan...STB4NB50
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ process, STB4NB50 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the...STB45NF3LL
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This application specific Power MOSFET STB45NF3LL is the third genaration of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resist...STB45NF06L
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This Power Mosfet STB45NF06L is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...STB45NF06
Mfg:ST Pack:D2PAK D/C:09+ Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 60V 38A D2PAKThis Power Mosfet STB45NF06 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, ru...STB45N10L
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
STB4395
Mfg:MOT D/C:06+ Vendor:Other Category:Other
The STB4395(A) is a fully integrated receivertransmitter designed for CT2 applications, and incorporates all the VCO's, synthesizers, PLLs, and channel select logic, to make a fully functional "single chip" radio.The STB...STB434S
Vendor:Other Category:Other
STB432S
Vendor:Other Category:Other
STB40NS15
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB40NS15 powermos MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various ...STB40NF10L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This PSTB40NF10L ower Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in adv...STB40NF10-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This STB40NF10-1 Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in ad...STB40NF10
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB40NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced h...STB40NF03L
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This STB40NF03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...STB40NE03L-20
Mfg:ST Pack:TO-262/263 D/C:06+ Vendor:Other Category:Other
This STB40NE03L-20 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged aval...STB40N20
Mfg:ST Pack:D2PAK D/C:09+ Vendor:STMicroelectronics (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 200V 40A D2PAKThis STB40N20 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced hi...STB3NC90Z-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB3NC90Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such ar-ra...STB3NC90Z
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The third generation of MESH OVERLAY™ Power MOSFETs STB3NC90Z for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such ar-rang...STB3NC60
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
The STB3NC60 PowerMESH II is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what con...STB3NB60
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY process, STB3NB60 SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's prop...STB3NA80
Mfg:ST Pack:TO-262/263 D/C:06+ Vendor:Other Category:Other
STB3NA60-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
STB36NF06L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This Power MOSFET STB36NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rug...STB36NF03L
Mfg:ST D/C:02+ Vendor:Other Category:Other
This application specific Power Mosfet STB36NF03L is the third generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resist...