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Index S : STB6NC90Z-1,STB6NC90Z,STB24NF10,
STB6NC90Z-1
Mfg:ST Pack:TO Vendor:Other Category:Other
The STB6NC90Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arran...STB6NC90Z
Mfg:ST Pack:TO Vendor:Other Category:Other
The STB6NC90Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...STB6NC80Z-1
Mfg:ST Pack:TO-220 D/C:01+ Vendor:Other Category:Other
The STB6NC80Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arran...STB6NC80Z
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
The STB6NC80Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...STB6NC60-1
Mfg:ST Pack:TO Vendor:Other Category:Other
The STB6NC60-1 PowerMESH(TM)II is the evolution of the first generation of MESH OVERLAY(TM). The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing edge ...STB6NB90
Mfg:ST Pack:TO-263 D/C:00+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY process, STB6NB90 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company...STB6NB50
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY] process, STB6NB50 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Compan...STB6NA80
Mfg:ST Pack:TO-262/263 D/C:06+ Vendor:Other Category:Other
STB6NA60
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
STB6LNC60
Mfg:ST Pack:TO Vendor:Other Category:Other
The STB6LNC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading ed...STB65G4
Vendor:Other Category:Other
STB6100
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The STB6100 ASIC is a highly integrated, low-cost direct conversion (zero IF) tuner IC for DVB-S2 broadcast satellite applications. This device includes an LNA, down-converting mixers, baseband low-pass filters, gain con...STB60NH02LT4
Mfg:ST Pack:D2PAK D/C:09+ Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 24V 60A D2PAKThe STB60NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.STB60NH02L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
The STB60NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.STB60NF10
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB60NF10 MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in adv...STB60NF06L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB60NF06L MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced ...STB60NF06
Vendor:Other Category:Other
This STB60NF06 Power Mosfet series realized with STMicroelectronicsunique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advan...STB60NF03L
Mfg:ST Pack:TO-263 D/C:08+ Vendor:Other Category:Other
This STB60NF03L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...STB60NE06L-16
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This Power Mosfet STB60NE06L-16 is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugge...STB60NE06-16
Vendor:Other Category:Other
This Power Mosfet STB60NE06-16 is the latest development of SGS-THOMSON unique " Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged aval...STB60NE03L-12
Mfg:ST Pack:TO-263 D/C:00+ Vendor:Other Category:Other
This Power MOSFET STB60NE03L-12 is the latest development of STMicroelectronics unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, ru...STB60NE03L-10
Mfg:ST Pack:TO-262/263 D/C:06+ Vendor:Other Category:Other
This Power Mosfet STB60NE03L-10 is the latest development of SGS-THOMSON unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalan...STB60N55F3
Mfg:D2PAK Pack:7850 D/C:ST Vendor:STMicroelectronics (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 55V 80A D2PAKThis n-channel enhancement mode Power MOSFET STB60N55F3 is the latest refinement of STMicroelectronics' unique "Single Feature Size™" strip-based process, which has decreased the critical alignment steps, offering ...STB60N06-14
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
STB60N03L-10
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
STB606I
Vendor:Other Category:Other
STB6000
Mfg:N/A Pack:BGA D/C:08+ Vendor:Other Category:Other
The STB6000 ASIC is a highly integrated, low cost direct conversion (zero IF) tuner IC for digital broadcast satellite(DBS) television applications.This device STB6000 includes an LNA, down-converting mixers, baseband lo...STB5NK50Z-1
Mfg:TO220MONOC.. Pack:7850 D/C:ST Vendor:Other Category:Other
The STB5NK50Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is ta...STB5NC90Z-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The third generation of MESH OVERLAY™ Power MOSFETs STB5NC90Z-1 for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arran...STB5NC90Z
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The third generation of MESH OVERLAY™ Power MOSFETs STB5NC90Z for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...STB5NC70Z-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB5NC70Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arran...STB5NC70Z
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
The STB5NC70Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...STB5NC50-1
Mfg:ST Pack:TO-220 D/C:01+ Vendor:Other Category:Other
The STB5NC50-1 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading ed...STB5NC50
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
The STB5NC50 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge...STB5NB80
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY] process, STB5NB80 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Compan...STB5NB60
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY process, STB5NB60 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company...STB5NA80
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
STB5NA50
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
STB5610
Vendor:Other Category:Other
The STB5610, using ST Microelectronics RF Bipolar technology, implements a Global Positioning System RF front-end. The chip provides down conversion from the 1575.42 MHz GPS (L1) signal to 4.092 MHz Output signal. The in...STB5600
Mfg:ST Pack:QFP Vendor:Other Category:Other
The STB5600, using STMicroelectronics HSB2, High Speed Bipolar technology, implements a Global Positioning System RF front-end.The chip STB5600 provides down conversion from the GPS (L1) signal at 1575 MHz via an IF of 2...STB55NF06L-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This Power Mosfet STB55NF06L-1 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance,...STB55NF06L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB55NF06L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...STB55NF06-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This Power MOSFET STB55NF06-1 is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, ru...STB55NF06
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This Power MOSFET STB55NF06 is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugg...STB55NF03L-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This Power MOSFET STB55NF03L-1 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, r...STB55NF03L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This Power MOSFET STB55NF03L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rug...STB55NE06L
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This Power Mosfet STB55NE06L is the latest development of SGS-THOMSON unique "Single Feature SizeÔ" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged a...STB55NE06
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This Power Mosfet STB55NE06 is the latest development of SGS-THOMSON unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance c...STB50NH02L
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB50NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved.STB50NE10L
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This STB50NE10L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeÔ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, ...STB50NE10
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB50NE10 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged a...STB50NE08
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This STB50NE08 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanch...STB4NK60Z-1
Mfg:TO220MONOC.. Pack:7850 D/C:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 600V 4A I2PAKThe STB4NK60Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is ...STB4NK60Z
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
The STB4NK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is ta...STB4NC80Z-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB4NC80Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur-passed on-resistance per unit area while integrat-ing back-to-back Zener diodes between gate and source. Such arr...STB4NC80Z
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB4NC80Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur-passed on-resistance per unit area while integrat-ing back-to-back Zener diodes between gate and source. Such arran...STB4NC60A-1
Mfg:ST Pack:TO202-3 D/C:01+ Vendor:Other Category:Other
The STB4NC60A-1 PowerMESH(TM)II is the evolution of the first generation of MESH OVERLAY(TM). The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing edge...STB4NC60-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB4NC60-1 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re-finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing ...STB4NC60
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
The STB4NC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re-finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing e...STB4NC50
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB4NC50 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re-finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing e...STB4NB80FP
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ process, STB4NB80FP SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Comp...STB4NB80
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ process, STB4NB80 SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Compan...STB4NB50
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ process, STB4NB50 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the...STB45NF3LL
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This application specific Power MOSFET STB45NF3LL is the third genaration of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resist...STB45NF06L
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This Power Mosfet STB45NF06L is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...STB45NF06
Mfg:ST Pack:D2PAK D/C:09+ Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 60V 38A D2PAKThis Power Mosfet STB45NF06 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, ru...STB45N10L
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
STB4395
Mfg:MOT D/C:06+ Vendor:Other Category:Other
The STB4395(A) is a fully integrated receivertransmitter designed for CT2 applications, and incorporates all the VCO's, synthesizers, PLLs, and channel select logic, to make a fully functional "single chip" radio.The STB...STB434S
Vendor:Other Category:Other
STB432S
Vendor:Other Category:Other
STB40NS15
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB40NS15 powermos MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various ...STB40NF10L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This PSTB40NF10L ower Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in adv...STB40NF10-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This STB40NF10-1 Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in ad...STB40NF10
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB40NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced h...STB40NF03L
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This STB40NF03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...STB40NE03L-20
Mfg:ST Pack:TO-262/263 D/C:06+ Vendor:Other Category:Other
This STB40NE03L-20 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged aval...STB40N20
Mfg:ST Pack:D2PAK D/C:09+ Vendor:STMicroelectronics (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 200V 40A D2PAKThis STB40N20 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced hi...STB3NC90Z-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The STB3NC90Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such ar-ra...STB3NC90Z
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
The third generation of MESH OVERLAY™ Power MOSFETs STB3NC90Z for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such ar-rang...STB3NC60
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
The STB3NC60 PowerMESH II is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what con...STB3NB60
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY process, STB3NB60 SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's prop...STB3NA80
Mfg:ST Pack:TO-262/263 D/C:06+ Vendor:Other Category:Other
STB3NA60-1
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
STB36NF06L
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This Power MOSFET STB36NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rug...STB36NF03L
Mfg:ST D/C:02+ Vendor:Other Category:Other
This application specific Power Mosfet STB36NF03L is the third generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resist...STB36NF02L
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This application specific Power Mosfet STB36NF02L is the third generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resultingtransistor shows the best trade-off between on-resista...STB35NF10
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB35NF10 Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in adva...STB30NS15_1058707
Vendor:Other Category:Other
This STB30NS15_1058707 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in ad...STB30NS15
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This STB30NS15 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced h...STB30NF10
Mfg:ST Pack:D2PAK D/C:09+ Vendor:Other Category:Other
This STB30NF10 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugg...STB30NE06L
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This Power Mosfet STB30NE06L is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged a...STB30N10
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
STB3020L
Mfg:ST D/C:02+ Vendor:Other Category:Other
This Power Mosfet STB3020L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged av...STB3015L
Mfg:ST Pack:06+ D/C:800/REEL Vendor:Other Category:Other
This Power MOSFET STB3015L is the latest development of STMicroelectronics unique " Single Feature SizeÔ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...STB300NH02L
Mfg:D2PAK Pack:7850 D/C:ST Vendor:STMicroelectronics (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 24V 120A D2PAKThis product STB300NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable for high current OR-ing application.STB25NM60N-1
Mfg:TO220MONOC.. Pack:7850 D/C:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 600V 21A I2PAKThe STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate c...STB25NM60N
Mfg:D2PAK;TO220MONOC.. Pack:7850 D/C:ST Vendor:STMicroelectronics (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 600V 21A D2PAKThe STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate c...STB25NM50N-1
Mfg:TO220MONOC.. Pack:7850 D/C:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 500V 22A I2PAKThe STB25NM50N-1 STx25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET ssociates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-r...STB25NM50N
Mfg:ST Pack:D2PAK D/C:09+ Vendor:STMicroelectronics (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 500V 22A D2PAKThe STB25NM50N STx25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET ssociates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-res...STB24NF10
Mfg:ST Pack:TO-263 D/C:06+ Vendor:Other Category:Other
This STB24NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced h...