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Position: Home > SiteMap > Index S > Page 596

Index S : STD3N30,STD3N25,STD15N06L,

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  • STD3N30

    Mfg:ST    Pack:TO-252    D/C:08+    Vendor:Other    Category:Other    

  • STD3N25

    Mfg:ST    Pack:TO-252    D/C:08+    Vendor:Other    Category:Other    

  • STD38NH02L-1

    Mfg:IPAKTO-251    Pack:7850    D/C:ST    Vendor:STMicroelectronics    Category:Discrete Semiconductor Products    
    MOSFET N-CH 24V 38A IPAKThis device STD38NH02L-1 utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achiev...

  • STD38NH02L

    Mfg:TO252DPAK    Pack:7850    D/C:ST    Vendor:Other    Category:Other    
    The STD38NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

  • STD38NF03L

    Mfg:ST    Pack:TO    Vendor:Other    Category:Other    
    This Power MOSFET STD38NF03L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged ...

  • STD361

    Vendor:Other    Category:Other    
    STD361 Bipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole,...

  • STD35NF3LL-1

    Mfg:ST    Pack:TO    Vendor:Other    Category:Other    
    This application specific Power MOSFET is the third genaration of STMicroelectronis STD35NF3LL-1 unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resis...

  • STD35NF3LL

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This application specific Power MOSFET STD35NF3LL is the third genaration of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resista...

  • STD35NF06L

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD35NF06L Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rug...

  • STD35NF06

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD35NF06 Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance,rug...

  • STD320S

    Vendor:Other    Category:Other    

  • STD30PF03L-1

    Mfg:IPAKTO-251    Pack:7850    D/C:ST    Vendor:STMicroelectronics    Category:Discrete Semiconductor Products    
    MOSFET P-CH 30V 24A IPAKThis STD30PF03L-1 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance ...

  • STD30PF03L

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD30PF03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance an...

  • STD30NF06L

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD30NF06L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...

  • STD30NF06

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:STMicroelectronics (VA)    Category:Discrete Semiconductor Products    
    MOSFET N-CH 60V 28A DPAKThis STD30NF06 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugg...

  • STD30NF03L

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD30NF03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged ...

  • STD30NE06L

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:STMicroelectronics    Category:Discrete Semiconductor Products    
    MOSFET N-CH 60V 30A DPAKThis STD30NE06L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...

  • STD30NE06

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    This STD30NE06 Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged ava...

  • STD2NM60-1

    Mfg:ST    Pack:TO    Vendor:Other    Category:Other    
    The STD2NM60-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resi...

  • STD2NM60

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    The STD2NM60 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resist...

  • STD2NK90Z-1

    Mfg:IPAKTO-251    Pack:7850    D/C:ST    Vendor:STMicroelectronics    Category:Discrete Semiconductor Products    
    MOSFET N-CH 900V 2.1A IPAKThe STD2NK90Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is ta...

  • STD2NK90Z

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    The STD2NK90Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is take...

  • STD2NK70Z-1

    Mfg:IPAKTO-251    Pack:7850    D/C:ST    Vendor:STMicroelectronics    Category:Discrete Semiconductor Products    
    MOSFET N-CH 700V 1.6A IPAKThe STD2NK70Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is t...

  • STD2NK70Z

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    The STD2NK70Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak...

  • STD2NC70Z-1

    Mfg:ST    Pack:TO-251    D/C:05+    Vendor:Other    Category:Other    
    The STD2NC70Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arran...

  • STD2NC70Z

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    The STD2NC70Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...

  • STD2NC60

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    The STD2NC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge...

  • STD2NC50-1

    Mfg:ST    Pack:TO    Vendor:Other    Category:Other    
    The STD2NC50-1 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading e...

  • STD2NC50

    Mfg:ST    Pack:TO-252    D/C:2    Vendor:Other    Category:Other    
    The STD2NC50 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg...

  • STD2NC45-1

    Mfg:IPAKTO-251    Pack:7850    D/C:ST    Vendor:STMicroelectronics    Category:Discrete Semiconductor Products    
    MOSFET N-CH 450V 1.5A IPAKThe STD2NC45-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing n-resistance significantly down, special care is take...

  • STD2NC40-1

    Mfg:IR    Pack:TO251    D/C:04+    Vendor:Other    Category:Other    
    The STD2NC40-1 PowerMESH]II is the evolution of the first generation of MESH OVERLAY]. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what ...

  • STD2NB80

    Mfg:N/A    Pack:NA/    D/C:09+    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAY] process, STD2NB80 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Compan...

  • STD2NB60-1

    Mfg:ST    Pack:TO    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAY™ process, STD2NB60-1STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the...

  • STD2NB60

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAY™ process, STD2NB60 SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company...

  • STD2NB50-1

    Mfg:ST    Pack:TO-251    D/C:00+    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAY™ process, STD2NB50-1 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with th...

  • STD2NB50

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAY™ process, STD2NB50 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the ...

  • STD2NB40

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAYÔ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's...

  • STD2NB25

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAYÔ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's...

  • STD2NA60

    Mfg:ST    Pack:TO-251    D/C:07+    Vendor:Other    Category:Other    

  • STD2NA50-TR

    Vendor:Other    Category:Other    
    The features of STD2NA50-TR: (1)TYPICAL RDS(on) = 3.25 W; (2)± 30V gate to source voltage rating; (3)100% avalanche tested; (4)repetitive avalanche data at 100oC; (5)low intrinsic capacitances; (6)gate charge minimized; ...

  • STD2NA50

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    

  • STD2N50

    Mfg:ST    Pack:TO-252    D/C:08+    Vendor:Other    Category:Other    

  • STD2HNK60Z-1

    Mfg:IPAKTO-251;TO252DPAK    Pack:7850    D/C:ST    Vendor:STMicroelectronics    Category:Discrete Semiconductor Products    
    MOSFET N-CH 600V 2A IPAKThe SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensur...

  • STD29NF03L

    Mfg:ST    Pack:TO    Vendor:Other    Category:Other    
    This application specific Power Mosfet is the third generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and ga...

  • STD25NF10L

    Vendor:Other    Category:Other    
    The STD25NF10L is one member of the low gate charge STripFET II power MOSFET series. This series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and g...

  • STD25NF10

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD25NF10 Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in adva...

  • STD25NE03L

    Mfg:ST    Pack:TO-252    D/C:08+    Vendor:Other    Category:Other    
    This Power MOSFET STD25NE03L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged ...

  • STD22NM20N

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance. Its use is therefore ideal as ...

  • STD20NF10

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD20NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced h...

  • STD20NF06L-1

    Mfg:IPAKTO-251    Pack:7850    D/C:ST    Vendor:Other    Category:Other    
    This STD20NF06L-1 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, ...

  • STD20NF06L

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD20NF06L Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rug...

  • STD20NF06

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD20NF06 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugg...

  • STD20NE06

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    This STD20NE06 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche...

  • STD20NE03L

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    This STD20NE03L Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanch...

  • STD20N20

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD20N20 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced hi...

  • STD20N06

    Mfg:ST    Pack:TO-252    D/C:08+    Vendor:Other    Category:Other    
    This series of POWER MOSFETS STD20N06 represents the latest development in low voltage technology. The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely ...

  • STD200

    Mfg:STM    Pack:SOP-24    D/C:03+    Vendor:Other    Category:Other    

  • STD1NK80Z-1

    Mfg:ST    Pack:TO-252    D/C:05+    Vendor:STMicroelectronics    Category:Discrete Semiconductor Products    
    MOSFET N-CH 800V 1A IPAKThe STD1NK80Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is t...

  • STD1NK80Z

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    The STD1NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak...

  • STD1NK60-1

    Vendor:STMicroelectronics    Category:Discrete Semiconductor Products    
    MOSFET N-CH 600V 1A IPAKThe features of STD1NK60-1: (1)typical RDS(on) = 8 W; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)new high voltage benchmark. The following is about the maximum ratings of ...

  • STD1NK60

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    The STD1NK60 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken...

  • STD1NC70Z-1

    Mfg:ST    Pack:04+    D/C:TO-251    Vendor:Other    Category:Other    
    The STD1NC70Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arra...

  • STD1NC70Z

    Mfg:ST    Pack:TO-252    D/C:08+    Vendor:Other    Category:Other    
    The STD1NC70Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...

  • STD1NC60

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    The STD1NC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge...

  • STD1NC40-1

    Mfg:ST    Pack:TO-251    D/C:08+    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAYÔ II process, STD1NC40-1 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with...

  • STD1NB80-1

    Mfg:ST    Pack:TO-251    D/C:00+    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAYÔ process, STD1NB80-1 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with th...

  • STD1NB80

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAYÔ process, STD1NB80 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the ...

  • STD1NB60

    Mfg:ST    Pack:TO-251    D/C:07+    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAYÔ process, STD1NB60 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the ...

  • STD1NB50

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    Using the latest high voltage MESH OVERLAY] process, STD1NB50 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Compan...

  • STD1NA60

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    

  • STD1LNK60Z-1

    Mfg:TO252DPAKAUBONDINGWIRES    Pack:7850    D/C:ST    Vendor:Other    Category:Other    
    The STD1LNK60Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is ...

  • STD1LNC60

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    The STD1LNC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg...

  • STD1HNC60

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    The STD1HNC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg...

  • STD19NE06L

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    This Power MOSFET STD19NE06L is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...

  • STD19NE06

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    This Power MOSFET STD19NE06 is the latest development of STMicroelectronis unique "Single Feature Size™" stripbasedprocess. The resulting transistor shows extremely high packing density for low on-resistance, rugge...

  • STD1955NL

    Vendor:Other    Category:Other    

  • STD1862L

    Vendor:Other    Category:Other    
    STD1862L Bipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hol...

  • STD1862

    Vendor:Other    Category:Other    
    • Audio power amplifier• High current applicationSTD1862 Bipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are...

  • STD1805

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    The device STD1805 is manufactured in NPN Planar Technology by using a "Base Island" layout.The resulting Transistor STD1805 shows exceptional high gain performance coupled with very low saturation voltage.

  • STD1802

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    The device STD1802 is manufactured in NPN Planar Technology by using a "Base Island" layout.The resulting Transistor STD1802 shows exceptional high gain performance coupled with very low saturation voltage.

  • STD18

    Vendor:Other    Category:Other    

  • STD17NF25

    Vendor:STMicroelectronics    Category:Discrete Semiconductor Products    
    MOSFET N-CH 250V 17A DPAKThe STD17NF25 is designed as one kind of N-channel 250V - 0.14 - 17A - TO-220/FP - DPAK - I2PAK low gate charge STripFET. II power MOSFET that can be used in switching applications. Features of this device are:(1)Low gat...

  • STD17NF03L-1

    Mfg:ST    Pack:05+    D/C:TO-251    Vendor:STMicroelectronics    Category:Discrete Semiconductor Products    
    MOSFET N-CH 30V 17A IPAKThis STD17NF03L-1 MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged...

  • STD17NF03L

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD17NF03L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, ru...

  • STD17NE03L

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size] " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche ...

  • STD17N06L

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    

  • STD17N06

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    

  • STD17N05L

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    

  • STD17N05

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    

  • STD1766

    Vendor:Other    Category:Other    
    • Medium power amplifierBipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two k...

  • STD16NF06L-1

    Vendor:Other    Category:Other    
    The STD16NF06L-1 is designed as one kind of N-channel 60V - 0.060 - 24A DPAK low gate charge STripFET power MOSFET device that is suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telec...

  • STD16NF06L

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This Power MOSFET STD16NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugg...

  • STD16NE10L

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This Power MOSFET STD16NE10L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged ...

  • STD16NE10

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    This Power MOSFET STD16NE10 is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche ...

  • STD16NE06L-1

    Mfg:ST    Pack:05+    D/C:TO-251    Vendor:Other    Category:Other    
    This Power Mosfet STD16NE06L-1 is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance...

  • STD16NE06L

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    This Power Mosfet STD16NE06L is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged av...

  • STD16NE06

    Mfg:ST    Pack:06+    D/C:2500/REEL    Vendor:Other    Category:Other    
    This STD16NE06 Power MOSFET is the latest development of STMicroelectronics unique "STripFET™" strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanc...

  • STD1664

    Vendor:Other    Category:Other    
    • Medium power amplifier applicationSTD1664 Bipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar bec...

  • STD15NF10

    Mfg:ST    Pack:TO-252    D/C:09+    Vendor:Other    Category:Other    
    This STD15NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced h...

  • STD15N06L

    Mfg:ST    Pack:TO-252    D/C:08+    Vendor:Other    Category:Other