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Mfg:ST Pack:TO-252 D/C:08+ Vendor:Other Category:Other
Mfg:ST Pack:TO-252 D/C:08+ Vendor:Other Category:Other
Mfg:IPAKTO-251 Pack:7850 D/C:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 24V 38A IPAKThis device STD38NH02L-1 utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achiev...
Mfg:TO252DPAK Pack:7850 D/C:ST Vendor:Other Category:Other
The STD38NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.
Mfg:ST Pack:TO Vendor:Other Category:Other
This Power MOSFET STD38NF03L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged ...
Vendor:Other Category:Other
STD361 Bipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole,...
Mfg:ST Pack:TO Vendor:Other Category:Other
This application specific Power MOSFET is the third genaration of STMicroelectronis STD35NF3LL-1 unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resis...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This application specific Power MOSFET STD35NF3LL is the third genaration of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resista...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD35NF06L Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rug...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD35NF06 Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance,rug...
Vendor:Other Category:Other
Mfg:IPAKTO-251 Pack:7850 D/C:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET P-CH 30V 24A IPAKThis STD30PF03L-1 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance ...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD30PF03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance an...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD30NF06L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:STMicroelectronics (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 60V 28A DPAKThis STD30NF06 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugg...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD30NF03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged ...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 60V 30A DPAKThis STD30NE06L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
This STD30NE06 Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged ava...
Mfg:ST Pack:TO Vendor:Other Category:Other
The STD2NM60-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resi...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
The STD2NM60 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resist...
Mfg:IPAKTO-251 Pack:7850 D/C:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 900V 2.1A IPAKThe STD2NK90Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is ta...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
The STD2NK90Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is take...
Mfg:IPAKTO-251 Pack:7850 D/C:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 700V 1.6A IPAKThe STD2NK70Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is t...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
The STD2NK70Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak...
Mfg:ST Pack:TO-251 D/C:05+ Vendor:Other Category:Other
The STD2NC70Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arran...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
The STD2NC70Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
The STD2NC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge...
Mfg:ST Pack:TO Vendor:Other Category:Other
The STD2NC50-1 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading e...
Mfg:ST Pack:TO-252 D/C:2 Vendor:Other Category:Other
The STD2NC50 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg...
Mfg:IPAKTO-251 Pack:7850 D/C:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 450V 1.5A IPAKThe STD2NC45-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing n-resistance significantly down, special care is take...
Mfg:IR Pack:TO251 D/C:04+ Vendor:Other Category:Other
The STD2NC40-1 PowerMESH]II is the evolution of the first generation of MESH OVERLAY]. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what ...
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY] process, STD2NB80 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Compan...
Mfg:ST Pack:TO Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY™ process, STD2NB60-1STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY™ process, STD2NB60 SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company...
Mfg:ST Pack:TO-251 D/C:00+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY™ process, STD2NB50-1 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with th...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY™ process, STD2NB50 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the ...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's...
Mfg:ST Pack:TO-251 D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
The features of STD2NA50-TR: (1)TYPICAL RDS(on) = 3.25 W; (2)± 30V gate to source voltage rating; (3)100% avalanche tested; (4)repetitive avalanche data at 100oC; (5)low intrinsic capacitances; (6)gate charge minimized; ...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
Mfg:ST Pack:TO-252 D/C:08+ Vendor:Other Category:Other
Mfg:IPAKTO-251;TO252DPAK Pack:7850 D/C:ST Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 600V 2A IPAKThe SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensur...
Mfg:ST Pack:TO Vendor:Other Category:Other
This application specific Power Mosfet is the third generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and ga...
Vendor:Other Category:Other
The STD25NF10L is one member of the low gate charge STripFET II power MOSFET series. This series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and g...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD25NF10 Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in adva...
Mfg:ST Pack:TO-252 D/C:08+ Vendor:Other Category:Other
This Power MOSFET STD25NE03L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged ...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance. Its use is therefore ideal as ...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD20NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced h...
Mfg:IPAKTO-251 Pack:7850 D/C:ST Vendor:Other Category:Other
This STD20NF06L-1 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, ...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD20NF06L Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rug...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD20NF06 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugg...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
This STD20NE06 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
This STD20NE03L Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanch...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD20N20 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced hi...
Mfg:ST Pack:TO-252 D/C:08+ Vendor:Other Category:Other
This series of POWER MOSFETS STD20N06 represents the latest development in low voltage technology. The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely ...
Mfg:STM Pack:SOP-24 D/C:03+ Vendor:Other Category:Other
Mfg:ST Pack:TO-252 D/C:05+ Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 800V 1A IPAKThe STD1NK80Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is t...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
The STD1NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak...
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 600V 1A IPAKThe features of STD1NK60-1: (1)typical RDS(on) = 8 W; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)new high voltage benchmark.
The following is about the maximum ratings of ...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
The STD1NK60 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken...
Mfg:ST Pack:04+ D/C:TO-251 Vendor:Other Category:Other
The STD1NC70Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arra...
Mfg:ST Pack:TO-252 D/C:08+ Vendor:Other Category:Other
The STD1NC70Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrange...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
The STD1NC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge...
Mfg:ST Pack:TO-251 D/C:08+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ II process, STD1NC40-1 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with...
Mfg:ST Pack:TO-251 D/C:00+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ process, STD1NB80-1 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with th...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ process, STD1NB80 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the ...
Mfg:ST Pack:TO-251 D/C:07+ Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAYÔ process, STD1NB60 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the ...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
Using the latest high voltage MESH OVERLAY] process, STD1NB50 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Compan...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
Mfg:TO252DPAKAUBONDINGWIRES Pack:7850 D/C:ST Vendor:Other Category:Other
The STD1LNK60Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is ...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
The STD1LNC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
The STD1HNC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edg...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
This Power MOSFET STD19NE06L is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, r...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
This Power MOSFET STD19NE06 is the latest development of STMicroelectronis unique "Single Feature Size™" stripbasedprocess. The resulting transistor shows extremely high packing density for low on-resistance, rugge...
Vendor:Other Category:Other
Vendor:Other Category:Other
STD1862L Bipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hol...
Vendor:Other Category:Other
• Audio power amplifier• High current applicationSTD1862 Bipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
The device STD1805 is manufactured in NPN Planar Technology by using a "Base Island" layout.The resulting Transistor STD1805 shows exceptional high gain performance coupled with very low saturation voltage.
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
The device STD1802 is manufactured in NPN Planar Technology by using a "Base Island" layout.The resulting Transistor STD1802 shows exceptional high gain performance coupled with very low saturation voltage.
Vendor:Other Category:Other
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 250V 17A DPAKThe STD17NF25 is designed as one kind of N-channel 250V - 0.14 - 17A - TO-220/FP - DPAK - I2PAK low gate charge STripFET. II power MOSFET that can be used in switching applications. Features of this device are:(1)Low gat...
Mfg:ST Pack:05+ D/C:TO-251 Vendor:STMicroelectronics Category:Discrete Semiconductor Products
MOSFET N-CH 30V 17A IPAKThis STD17NF03L-1 MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD17NF03L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, ru...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size] " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche ...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
Vendor:Other Category:Other
• Medium power amplifierBipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two k...
Vendor:Other Category:Other
The STD16NF06L-1 is designed as one kind of N-channel 60V - 0.060 - 24A DPAK low gate charge STripFET power MOSFET device that is suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telec...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This Power MOSFET STD16NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugg...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This Power MOSFET STD16NE10L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged ...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
This Power MOSFET STD16NE10 is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche ...
Mfg:ST Pack:05+ D/C:TO-251 Vendor:Other Category:Other
This Power Mosfet STD16NE06L-1 is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
This Power Mosfet STD16NE06L is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged av...
Mfg:ST Pack:06+ D/C:2500/REEL Vendor:Other Category:Other
This STD16NE06 Power MOSFET is the latest development of STMicroelectronics unique "STripFET™" strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanc...
Vendor:Other Category:Other
• Medium power amplifier applicationSTD1664 Bipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar bec...
Mfg:ST Pack:TO-252 D/C:09+ Vendor:Other Category:Other
This STD15NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced h...
Mfg:ST Pack:TO-252 D/C:08+ Vendor:Other Category:Other
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