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Index R : RF2318,RF2317,RF1K49221,
RF2318
Mfg:RFMD Pack:02+ D/C:SOP-8 Vendor:Other Category:Other
The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. RF2318 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as...RF2317
Vendor:Other Category:Other
The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. RF2317 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily...RF2314
Mfg:RFMD Pack:SOT-23-5 D/C:00+ Vendor:Other Category:Other
The RF2314 is a general purpose, low-cost, high performance amplifier designed for operation from a 2.7V to 6V supply with low current consumption. The circuit RF2314 configuration with resistive feedback allows for broa...RF2312
Vendor:Other Category:Other
The RF2312 is a general purpose, low cost high linearity RF amplifier IC. RF2312 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily...RF2311
Mfg:RF Pack:SOP-8 D/C:SOP-8 Vendor:Other Category:Other
The RF2311 is a general purpose, low cost low power RF amplifier IC. RF2311 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily casc...RF2310
Mfg:IR D/C:97+bulk Vendor:Other Category:Other
The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. RF2310 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran-sistor (HBT) process, and has been designed for use as an easi...RF2308
Mfg:PHILIPS Pack:MODULE D/C:50 Vendor:Other Category:Other
The RF2308 is a general purpose, low cost RF amplifier IC. RF2308 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50&...RF2307
Vendor:Other Category:Other
The RF2307 is a general purpose, low cost RF amplifier IC. RF2307 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50&...RF2306
Vendor:Other Category:Other
The RF2306 is a general purpose, low cost RF amplifier IC. RF2306 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50&...RF2304
Mfg:RF Pack:SOP-8 D/C:09+ Vendor:Other Category:Other
The RF2304 is a low-noise small-signal amplifier.RF2304 is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less t...RF2302
Mfg:RF Pack:MSOP D/C:2005+ Vendor:Other Category:Other
The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. RF2302 is suitable for use in C...RF2301
Mfg:RFMD Pack:SMD Vendor:Other Category:Other
The RF2301 is a high reverse isolation buffer amplifier. RF2301 is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems o...RF2196
Mfg:RFMD Pack:BGA Vendor:Other Category:Other
The RF2196 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2196 is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier in 3V...RF2192
Mfg:RFMD D/C:02+ Vendor:Other Category:Other
The RF2192 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2192 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed...RF2189
Mfg:RFMD Pack:QFN D/C:0233+ Vendor:Other Category:Other
The RF2189 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. RF2189 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, ...RF2186
Mfg:RFMD Vendor:Other Category:Other
The RF2186 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2186 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed...RF2175
Mfg:RFMD Pack:SSOP16 Vendor:Other Category:Other
The RF2175 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2175 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed...RF2174
Vendor:Other Category:Other
The RF2174 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. RF2174 is manufactured on an advanced GaAs HBT process, and has been designed for use as the final...RF2173
Vendor:Other Category:Other
The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications.RF2173 is manufactured on an advanced GaAs HBT process, and RF2173 has been designed for use as the...RF2172
Mfg:RFMD Pack:QFN16 D/C:02+ Vendor:Other Category:Other
The RF2172 is a medium-power high efficiency amplifierIC targeting 3.6V handheld systems.RF2172 is manufacturedon an advanced Gallium Arsenide Heterojunctionipolar Transistor (HBT) process, and has beendesigned for use a...RF2163
Mfg:N/A Pack:N/A D/C:N/A Vendor:Other Category:Other
The RF2163 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. RF2163 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, ...RF2162
Vendor:Other Category:Other
The RF2162 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2162 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed...RF2161
Vendor:Other Category:Other
The RF2161 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2161 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed...RF2157
Pack:NEW PART D/C:99 Vendor:Other Category:Other
The RF2157 is a high-power, high-efficiency linear amplifierIC targeting 3V handheld systems. RF2157 ismanufactured on an advanced Gallium Arsenide HeterojunctionBipolar Transistor (HBT) process, and RF2157 has beendesig...RF2155
Mfg:RFMD Pack:SOP D/C:0449+ Vendor:Other Category:Other
The RF2155 is a 3V medium power programmable gain amplifier IC. RF2155 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplif...RF2153
Mfg:RFDM Pack:CLCC Vendor:Other Category:Other
The RF2153 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2153 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and RF2153 has been d...RF2152
Mfg:RFMD Pack:SSOP16 D/C:99+ Vendor:Other Category:Other
The RF2152 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. RF2152 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and RF2152 has been d...RF2146
Mfg:RFMD Vendor:Other Category:Other
The RF2146 is a high-power, high-efficiency linear amplifier IC. RF2146 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and RF2146 has been designed for use as the final R...RF2140
Mfg:RFMD Pack:BGA D/C:2001 Vendor:Other Category:Other
The RF2140 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. RF2140 is manufactured on an advanced GaAs HBT process, and RF2140 has been designed for use as th...RF2138
Mfg:N/A Pack:QFN D/C:02+ Vendor:Other Category:Other
The RF2138 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. RF2138 is manufactured on an advanced GaAs HBT process, and has been designed for use as the final...RF2137
Mfg:RF Pack:sop-8 D/C:20058 Vendor:Other Category:Other
The RF2137 is a high power, high efficiency linear amplifier IC. RF2137 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ampli...RF2131
Vendor:Other Category:Other
The RF2131 is a high-power, high-efficiency amplifier IC.RF2131 is manufactured on an advanced Gallium Ars-enide Heterojunction Bipolar Transistor (HBT) process,and RF2131 has been designed for use as the final RF amplif...RF2129TR7M1A
Vendor:Other Category:Other
The RF2129TR7M1A belongs to the RF2129 series. RF2129TR7M1A is a kind of linear, medium power, high efficiency amplifier IC. It is designed for low voltage operation. It is used as the final RF amplifier in 2.5GHz spread...RF2129
Pack:SOP Vendor:Other Category:Other
The RF2129 is a linear, medium power, high efficiencyamplifier IC designed specifically for low voltage opera-tion. RF2129 is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) pro-cess, ...RF2128P
Mfg:SOP Vendor:Other Category:Other
The RF2128P is a medium-power, high-efficiency, linearamplifier IC. RF2128P is manufactured on an advancedGallium Arsenide Heterojunction Bipolar Transistor (HBT)process, and has been designed for use as the final RFampl...RF2128
D/C:07+ Vendor:Other Category:Other
The RF2128 is a medium-power, high-efficiency, linearamplifierIC.ThedeviceismanufacturedonanadvancedGallium Arsenide Heterojunction Bipolar Transistor (HBT)process, and RF2128 has been designed for use as the final RFamp...RF2127
Mfg:RFMD D/C:04+ Vendor:Other Category:Other
The RF2127 is a medium-power, high-efficiency, linearamplifierIC.ThedeviceismanufacturedonanadvancedGallium Arsenide Heterojunction Bipolar Transistor (HBT)process, and RF2127 has been designed for use as the final RFamp...RF2126
Vendor:Other Category:Other
The RF2126 is a high-power, high-efficiency, linear ampli-fier IC. RF2126 is manufactured on an advanced Gal-lium Arsenide Heterojunction Bipolar Transistor (HBT)process and has been designed for use as the final RF ampl...RF2125P
Vendor:Other Category:Other
The RF2125P is a high power, high efficiency linear amplifierIC. RF2125P ismanufacturedonanadvanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier...RF212
Vendor:Other Category:Other
The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device o...RF2119
Mfg:IR Pack:N/A D/C:09+ Vendor:Other Category:Other
The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. RF2119 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed ...RF2117
Mfg:RFMD Pack:SOP-16 D/C:0426+ Vendor:Other Category:Other
The RF2117 is a high power amplifier IC. RF2117 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular ...RF2115L
Vendor:Other Category:Other
The RF2115L is a high power amplifier IC. RF2115L ismanufactured on an advanced Gallium Arsenide HeterojunctionBipolar Transistor (HBT) process, and has beendesigned for use as the final RF amplifier in analog cellularph...RF2114
Mfg:RFMD Vendor:Other Category:Other
The RF2114 is a medium to high power linear amplifierIC. RF2114 is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) process,and has been designed for use as the final linearRF amplifier...RF2113
Vendor:Other Category:Other
The RF2113 is a kind of medium to high power linear amplifier IC. RF2113 is fabricated with an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the dual linear R...RF210A
Vendor:Other Category:Other
The RF210A and RF210B devices are available as a dual-band front end for Global System for Mobile Communications (GSM) handset applications. Both of these highly integrated, monolithic devices RF210A are optimized for du...RF2108
Mfg:250 Pack:RFMD Vendor:Other Category:Other
The RF2108 is a high power, high efficiency linear amplifier IC. RF2108 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ampli...RF2105L
Mfg:RF Pack:LCC D/C:20058 Vendor:Other Category:Other
The RF2105L is a high power, high efficiency linear amplifier IC. RF2105L is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amp...RF2104
Mfg:35 Pack:RFMD Vendor:Other Category:Other
The RF2104 is a medium power amplifier IC. RF2104 manufactured on a low cost Silicon process, and hasbeen designed for use as the final RF amplifier in UHFradio transmitters operating between 400MHz and1000MHz. It may al...RF2103P
Mfg:RFMD Pack:SOP Vendor:Other Category:Other
The RF2103P is a medium power linear amplifier IC. RF2103P is manufactured on an advanced Gallium ArsenideHeterojunction Bipolar Transistor (HBT) process, and haseen designed for use as the final linear RF amplifier inUH...RF2103
Vendor:Other Category:Other
The RF2103 is a kind of power linear amplifier IC. RF2103 is fabricated with an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and RF2103 has been designed for use as the dual linear RF amplif...RF2048
Vendor:Other Category:Other
The RF2048 is a general purpose, low cost RF amplifier IC. RF2048 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 ...RF2047
Vendor:Other Category:Other
The RF2047 is a general purpose, low cost RF amplifier IC. RF2047 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 ...RF2046
Vendor:Other Category:Other
The RF2046 is a general purpose, low cost RF amplifier IC. RF2046 is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as an easily-cascadable 50 g...RF2045
Mfg:RFMD D/C:N/A Vendor:Other Category:Other
The RF2045 is a general purpose, low cost RF amplifier IC. RF2045 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 ...RF2044
Mfg:RFMD D/C:N/A Vendor:Other Category:Other
The RF2044 is a general purpose, low-cost RF amplifier IC. RF2044 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 ...RF2043
Vendor:Other Category:Other
The RF2043 is a general purpose, low cost RF amplifier IC. RF2043 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 ...RF201L2S
Mfg:ROHM D/C:08+ Vendor:Other Category:Other
RF2001T4S
Mfg:ROOM Pack:ITO-220AB D/C:2007 Vendor:Other Category:Other
RF2001T3D
Mfg:ROHM Pack:SOP D/C:07+ Vendor:Rohm Semiconductor Category:Discrete Semiconductor Products
DIODE FAST REC 300V 20A TO220FNRF200
Vendor:Other Category:Other
Willow offers the RF RF200 series to meet general set of requirements NON-INDUCTIVE high frequency, satisfy with an high power and Non-inductive specification at Economic Price.RF1VU7
Vendor:Other Category:Other
The RF1VU7 is a kind of integrated television demodulator assembly designed for use with VTSS-series tuners. RF1VU7 replaces the earlier RIFU0508GEZZ and provides the same functionality in all respects. The input is a st...RF1S9640SM
D/C:07+ Vendor:Other Category:Other
These are P-Channel enhancement mode silicon-gate power field-effect transistors. RF1S9640SM are advanced power MOSFETs designed, tested, and guaranteed to withstand specified level of energy in the breakdown avalanche m...RF1S9630SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9630SM vare advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch...RF1S9540SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche...RF1S9530SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9530SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche...RF1S70N06SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S70N06SM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performanc...RF1S70N06
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of...RF1S70N03SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S70N03SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1S70N03
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization ...RF1S640SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. RF1S640SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche ...RF1S640
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-262 D/C:08+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. RF1S640 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mo...RF1S630SM
D/C:07+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors.RF1S630SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche m...RF1S60P03SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These P-Channel power MOSFETs are manufactured using the MegaFET process. RF1S60P03SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1S60P03
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum util...RF1S540SM
Vendor:Other Category:Other
RF1S50N06SM
Mfg:FAIRCHILD D/C:144 Vendor:Other Category:Other
These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S4N100SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1S4N100SM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. RF1S4N100SM are designed for use in applications such as switching regulators, switching converters, motor drivers, ...RF1S45N06SM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. RF1S45N06SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch...RF1S45N06LESM
Mfg:HAR D/C:9627 Vendor:Other Category:Other
These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. RF1S45N06LESM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of s...RF1S45N06
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utiliza...RF1S45N03LSM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process.RF1S45N03LSM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performanc...RF1S45N03L
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S45N03L, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance...RF1S45N02LSM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S45N02LSM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic...RF1S45N02L
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic...RF1S42N03LSM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S42N03LSM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performan...RF1S40N10SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S40N10SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1S40N10LESM
Mfg:FAIRCHIL Pack:TO-263 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. RF1S40N10LESM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utiliz...RF1S40N10
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-262 D/C:08+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S40N10, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding pe...RF1S30P06SM
Mfg:INTERSIL Pack:07+ D/C:TO-263 Vendor:Other Category:Other
These are P-Channel power MOSFETs manufactured using the MegaFET process. RF1S30P06SM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performanc...RF1S30P05SM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
These are P-Channel power MOSFETs manufactured using the MegaFET process. RF1S30P05SM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performanc...RF1S30N06LESM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S30N06LESM, which uses featuresizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding...RF1S30N06LE
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S30N06LE, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati...RF1S25N06SM
Mfg:KA/INTRISII Pack:TO- Vendor:Other Category:Other
These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S25N06SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1S25N06
Mfg:FAIRCHILD Pack:TO-262/263 D/C:05+ Vendor:Other Category:Other
These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S25N06, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding pr...RF1S22N10SM
Mfg:FAIRCHILD/HARRIS/Iintersil Pack:TO-263 D/C:08+ Vendor:Other Category:Other
These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S22N10SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding ...RF1K49224
Mfg:FAIRCHILD Pack:SOP8 D/C:93+ Vendor:Other Category:Other
The RF1K49224 complementary power MOSFET is manufactured using an advanced MegaFET process. RF1K49224, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resultin...RF1K4922396
Vendor:Other Category:Other
The RF1K4922396 is manufactured using an advanced MegaFET process. The features of RF1K4922396 are: (1)2.5A, 30V; (2)rDS(ON) = 0.150W; (3)Temperature Compensating PSPICE? Model; (4)Thermal Impedance PSPICE Model; (5)Peak...RF1K49223
Mfg:FAIRCHILD Pack:SOP8 D/C:08+ Vendor:Other Category:Other
The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. RF1K49223, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti...RF1K49221
Mfg:FAIRCHILD Pack:SOP8 D/C:08+ Vendor:Other Category:Other
The RF1K49221 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process.RF1K49221, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resultin...